Applied Spintronics, Inc.

Organization

Milpitas, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
MTJ read head with sidewall spacers
- Patent number 7,544,983
- Issue date Jun 9, 2009
- Headway Technologies, Inc.
- Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reference cell scheme for MRAM
- Patent number 7,499,314
- Issue date Mar 3, 2009
- MagIC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming scheme for segmented word line MRAM array
- Patent number 7,480,172
- Issue date Jan 20, 2009
- MagIC Technologies, Inc.
- Xizeng Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell structure and method of fabrication
- Patent number 7,476,919
- Issue date Jan 13, 2009
- Headway Technologies, Inc.
- Liubo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Capping structure for enhancing dR/R of the MTJ device
- Patent number 7,449,345
- Issue date Nov 11, 2008
- Headway Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with free layer locking mechani...
- Patent number 7,443,707
- Issue date Oct 28, 2008
- Headway Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with thin conduction electrical...
- Patent number 7,394,122
- Issue date Jul 1, 2008
- Headway Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with thin conduction electrical...
- Patent number 7,394,123
- Issue date Jul 1, 2008
- Headway Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive algorithm for MRAM manufacturing
- Patent number 7,369,430
- Issue date May 6, 2008
- Headway Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Amorphous layers in a magnetic tunnel junction device
- Patent number 7,369,376
- Issue date May 6, 2008
- Headway Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Configurable MRAM and method of configuration
- Patent number 7,362,644
- Issue date Apr 22, 2008
- MagIC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with coupled soft adjacent magn...
- Patent number 7,335,961
- Issue date Feb 26, 2008
- Headway Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell scheme for MRAM
- Patent number 7,321,507
- Issue date Jan 22, 2008
- MagIC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ read head with sidewall spacers
- Patent number 7,241,632
- Issue date Jul 10, 2007
- Headway Technologies, Inc.
- Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer (seed) layer in a high-performance magnetic tunneling juncti...
- Patent number 7,238,979
- Issue date Jul 3, 2007
- Headway Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive algorithm for MRAM manufacturing
- Patent number 7,224,628
- Issue date May 29, 2007
- Headway Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure/method to fabricate a high-performance magnetic tunneling...
- Patent number 7,217,577
- Issue date May 15, 2007
- Headway Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 7,211,447
- Issue date May 1, 2007
- Headway Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory array with free layer locking mechanism
- Patent number 7,211,874
- Issue date May 1, 2007
- Headway Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 7,208,807
- Issue date Apr 24, 2007
- Headway Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
World line segment select transistor on word line current source side
- Patent number 7,180,769
- Issue date Feb 20, 2007
- Headway Technologies, Inc.
- Po-Kang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with proximate read and write l...
- Patent number 7,132,707
- Issue date Nov 7, 2006
- Headway Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure/method to fabricate a high performance magnetic tunneling...
- Patent number 7,122,852
- Issue date Oct 17, 2006
- Headway Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive algorithm for MRAM manufacturing
- Patent number 7,085,183
- Issue date Aug 1, 2006
- Headway Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM arrays with reduced bit line resistance and method to make the...
- Patent number 7,071,009
- Issue date Jul 4, 2006
- Headway Technologies, Inc.
- Po-Kang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory array with thin conduction electrical...
- Patent number 7,067,330
- Issue date Jun 27, 2006
- Headway Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell structure and method of fabrication
- Patent number 7,045,368
- Issue date May 16, 2006
- Headway Technologies, Inc.
- Liubo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxidation structure/method to fabricate a high-performance magnetic...
- Patent number 7,045,841
- Issue date May 16, 2006
- Headway Technologies, Inc.
- Cheng T. Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory array with coupled soft adjacent magn...
- Patent number 6,979,586
- Issue date Dec 27, 2005
- Headway Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxidation structure/method to fabricate a high-performance magnetic...
- Patent number 6,974,708
- Issue date Dec 13, 2005
- Headway Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and implementation of stress test for MRAM
- Publication number 20090086531
- Publication date Apr 2, 2009
- MagIC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Spin-torque MRAM: spin-RAM, array
- Publication number 20080266943
- Publication date Oct 30, 2008
- MagIC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Reference cell scheme for MRAM
- Publication number 20080094884
- Publication date Apr 24, 2008
- MaglC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
GMR biosensor with enhanced sensitivity
- Publication number 20080032423
- Publication date Feb 7, 2008
- MagIC Technologies, Inc.
- Po-Kang Wang
- G01 - MEASURING TESTING
Information Patent Application
Magnetic random access memory array with free layer locking mechani...
- Publication number 20070184561
- Publication date Aug 9, 2007
- Headway Technologies,,Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Application
Novel structure/method to fabricate a high-performance magnetic tun...
- Publication number 20070015294
- Publication date Jan 18, 2007
- Headway Technologies Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptive algorithim for MRAM manufacturing
- Publication number 20060250867
- Publication date Nov 9, 2006
- HEADWAY TECHNOLOGIES, INC.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive algorithm for MRAM manufacturing
- Publication number 20060250866
- Publication date Nov 9, 2006
- Headway Technologies Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ read head with sidewall spacers
- Publication number 20060234445
- Publication date Oct 19, 2006
- HEADWAY TECHNOLOGIES, INC.
- Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORLD LINE SEGMENT SELECT TRANSISTOR ON WORD LINE CURRENT SOURCE SIDE
- Publication number 20060227597
- Publication date Oct 12, 2006
- HEADWAY TECHNOLOGIES, INC.
- Po-Kang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Amorphous layers in a magnetic tunnel junction device
- Publication number 20060209590
- Publication date Sep 21, 2006
- HEADWAY TECHNOLOGIES, INC.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory array with thin conduction electrical...
- Publication number 20060211155
- Publication date Sep 21, 2006
- HEADWAY TECHNOLOGIES, INC.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Novel structure and method to fabricate high performance MTJ device...
- Publication number 20060208296
- Publication date Sep 21, 2006
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- G01 - MEASURING TESTING
Information Patent Application
Novel structure and method to fabricate high performance MTJ device...
- Publication number 20060211198
- Publication date Sep 21, 2006
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM cell structure and method of fabrication
- Publication number 20060209591
- Publication date Sep 21, 2006
- HEADWAY TECHNOLOGIES, INC.
- Liubo Hong
- G11 - INFORMATION STORAGE
Information Patent Application
Structure and process for composite free layer in CPP GMR device
- Publication number 20060114621
- Publication date Jun 1, 2006
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Novel oxidation structure/method to fabricate a high-performance ma...
- Publication number 20060057745
- Publication date Mar 16, 2006
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic random access memory array with proximate read and write l...
- Publication number 20060028862
- Publication date Feb 9, 2006
- HEADWAY TECHNOLOGIES, INC.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Novel buffer (seed) layer in a high performance magnetic tunneling...
- Publication number 20060022227
- Publication date Feb 2, 2006
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive algorithm for MRAM manufacturing
- Publication number 20060013038
- Publication date Jan 19, 2006
- HEADWAY TECHNOLOGIES, INC.
- Hsu Kaiyang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory array with thin conduction electrical...
- Publication number 20060014346
- Publication date Jan 19, 2006
- HEADWAY TECHNOLOGIES, INC.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory array with thin conduction electrical...
- Publication number 20060014306
- Publication date Jan 19, 2006
- HEADWAY TECHNOLOGIES, INC.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Novel underlayer for high performance magnetic tunneling junction MRAM
- Publication number 20060002184
- Publication date Jan 5, 2006
- HEADWAY TECHNOLOGIES, INC.
- Liubo Hong
- G01 - MEASURING TESTING
Information Patent Application
Magnetic random access memory array with coupled soft adjacent magn...
- Publication number 20050280960
- Publication date Dec 22, 2005
- HEADWAY TECHNOLOGIES, INC.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Application
Novel capping structure for enhancing dR/R of the MTJ device
- Publication number 20050276099
- Publication date Dec 15, 2005
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
A METHOD OF FORMING A MAGNETIC TUNNELING JUNCTION (MTJ) MRAM DEVICE...
- Publication number 20050260772
- Publication date Nov 24, 2005
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM cell structure and method of fabrication
- Publication number 20050260773
- Publication date Nov 24, 2005
- HEADWAY TECHNOLOGIES, INC.
- Liubo Hong
- G11 - INFORMATION STORAGE
Information Patent Application
Novel structure/method to fabricate a high-performance magnetic tun...
- Publication number 20050254293
- Publication date Nov 17, 2005
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM arrays with reduced bit line resistance and method to make the...
- Publication number 20050221511
- Publication date Oct 6, 2005
- HEADWAY TECHNOLOGIES, INC.
- Po-Kang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory array with free layer locking mechanism
- Publication number 20050219895
- Publication date Oct 6, 2005
- HEADWAY TECHNOLOGIES, INC.
- Yimin Guo
- G11 - INFORMATION STORAGE

Applied Spintronics, Inc.

Organization

Patents Grantslast 30 patents

MTJ read head with sidewall spacers

Reference cell scheme for MRAM

Programming scheme for segmented word line MRAM array

MRAM cell structure and method of fabrication

Capping structure for enhancing dR/R of the MTJ device

Magnetic random access memory array with free layer locking mechani...

Magnetic random access memory array with thin conduction electrical...

Magnetic random access memory array with thin conduction electrical...

Adaptive algorithm for MRAM manufacturing

Amorphous layers in a magnetic tunnel junction device

Configurable MRAM and method of configuration

Magnetic random access memory array with coupled soft adjacent magn...

Reference cell scheme for MRAM

MTJ read head with sidewall spacers

Buffer (seed) layer in a high-performance magnetic tunneling juncti...

Adaptive algorithm for MRAM manufacturing

Structure/method to fabricate a high-performance magnetic tunneling...

Structure and method to fabricate high performance MTJ devices for...

Magnetic random access memory array with free layer locking mechanism

Structure and method to fabricate high performance MTJ devices for...

World line segment select transistor on word line current source side

Magnetic random access memory array with proximate read and write l...

Structure/method to fabricate a high performance magnetic tunneling...

Adaptive algorithm for MRAM manufacturing

MRAM arrays with reduced bit line resistance and method to make the...

Magnetic random access memory array with thin conduction electrical...

MRAM cell structure and method of fabrication

Oxidation structure/method to fabricate a high-performance magnetic...

Magnetic random access memory array with coupled soft adjacent magn...

Oxidation structure/method to fabricate a high-performance magnetic...

Patents Applicationslast 30 patents

Method and implementation of stress test for MRAM

Spin-torque MRAM: spin-RAM, array

Reference cell scheme for MRAM

GMR biosensor with enhanced sensitivity

Magnetic random access memory array with free layer locking mechani...

Novel structure/method to fabricate a high-performance magnetic tun...

Adaptive algorithim for MRAM manufacturing

Adaptive algorithm for MRAM manufacturing

MTJ read head with sidewall spacers

WORLD LINE SEGMENT SELECT TRANSISTOR ON WORD LINE CURRENT SOURCE SIDE

Amorphous layers in a magnetic tunnel junction device

Magnetic random access memory array with thin conduction electrical...

Novel structure and method to fabricate high performance MTJ device...

Novel structure and method to fabricate high performance MTJ device...

MRAM cell structure and method of fabrication

Structure and process for composite free layer in CPP GMR device

Novel oxidation structure/method to fabricate a high-performance ma...

Magnetic random access memory array with proximate read and write l...

Novel buffer (seed) layer in a high performance magnetic tunneling...

Adaptive algorithm for MRAM manufacturing

Magnetic random access memory array with thin conduction electrical...

Magnetic random access memory array with thin conduction electrical...

Novel underlayer for high performance magnetic tunneling junction MRAM

Magnetic random access memory array with coupled soft adjacent magn...

Novel capping structure for enhancing dR/R of the MTJ device

A METHOD OF FORMING A MAGNETIC TUNNELING JUNCTION (MTJ) MRAM DEVICE...

MRAM cell structure and method of fabrication

Novel structure/method to fabricate a high-performance magnetic tun...

MRAM arrays with reduced bit line resistance and method to make the...

Magnetic random access memory array with free layer locking mechanism

Trademarklast 30 trademarks