AVOLARE 2, LLC

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Chapel Hill, NC, US

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Patents Grantslast 30 patents

Information Patent Grant
Schottky barrier CMOS device and method
- Patent number 8,154,025
- Issue date Apr 10, 2012
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a CMOS device with zero soft error rate
- Patent number 8,084,342
- Issue date Dec 27, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic Schottky barrier MOSFET device and method of manufacture
- Patent number 8,058,167
- Issue date Nov 15, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal source and drain transistor having high dielectric constant g...
- Patent number 8,022,459
- Issue date Sep 20, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming schottky...
- Patent number 7,939,902
- Issue date May 10, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with zero soft error rate
- Patent number 7,821,075
- Issue date Oct 26, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having high dielectric constant gate insulating layer an...
- Patent number 7,674,680
- Issue date Mar 9, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
- Publication number 20120126311
- Publication date May 24, 2012
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20120056250
- Publication date Mar 8, 2012
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20110175160
- Publication date Jul 21, 2011
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE
- Publication number 20110034016
- Publication date Feb 10, 2011
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...
- Publication number 20100213556
- Publication date Aug 26, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD
- Publication number 20100032771
- Publication date Feb 11, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER INTEGRATED CIRCUIT
- Publication number 20100025774
- Publication date Feb 4, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20100015802
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...
- Publication number 20100013014
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN SCHOTTKY BARRIER SILICON-ON-NOTHING MOSFET DEVICE
- Publication number 20100013015
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER CMOS DEVICE AND METHOD
- Publication number 20100006949
- Publication date Jan 14, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS

AVOLARE 2, LLC

Organization

Patents Grantslast 30 patents

Schottky barrier CMOS device and method

Method of manufacturing a CMOS device with zero soft error rate

Dynamic Schottky barrier MOSFET device and method of manufacture

Metal source and drain transistor having high dielectric constant g...

Field effect transistor having source and/or drain forming schottky...

CMOS device with zero soft error rate

Transistor having high dielectric constant gate insulating layer an...

Patents Applicationslast 30 patents

POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE

METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD

SCHOTTKY BARRIER INTEGRATED CIRCUIT

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...

METAL SOURCE/DRAIN SCHOTTKY BARRIER SILICON-ON-NOTHING MOSFET DEVICE

SCHOTTKY BARRIER CMOS DEVICE AND METHOD

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