Branson International Plasma Corporation

Organization

Hayward, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Plasma etching device and process
- Patent number 5,099,100
- Issue date Mar 24, 1992
- Branson International Plasma Corporation
- Richard L. Bersin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor and process with wafer temperature control
- Patent number 5,016,332
- Issue date May 21, 1991
- Branson International Plasma Corporation
- Richard F. Reichelderfer
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Plasma etching apparatus
- Patent number 4,631,105
- Issue date Dec 23, 1986
- Branson International Plasma Corporation
- John C. Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and gas mixture for etching aluminum
- Patent number 4,380,488
- Issue date Apr 19, 1983
- Branson International Plasma Corporation
- Richard F. Reichelderfer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Power supply and method utilizing applied current for increased hys...
- Patent number 4,368,419
- Issue date Jan 11, 1983
- Branson International Plasma Corporation
- Joseph M. Welty
- G05 - CONTROLLING REGULATING
Information Patent Grant
Process and gas mixture for etching silicon dioxide and silicon nit...
- Patent number 4,324,611
- Issue date Apr 13, 1982
- Branson International Plasma Corporation
- Diane C. Vogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Computer controlled system for processing semiconductor wafers
- Patent number 4,313,783
- Issue date Feb 2, 1982
- Branson International Plasma Corporation
- John T. Davies
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and gas for treatment of semiconductor devices
- Patent number 4,303,467
- Issue date Dec 1, 1981
- Branson International Plasma Corporation
- Frank Scornavacca
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gas plasma reactor for circuit boards and the like
- Patent number 4,285,800
- Issue date Aug 25, 1981
- Branson International Plasma Corp.
- Joseph M. Welty
- H01 - BASIC ELECTRIC ELEMENTS

Branson International Plasma Corporation

Organization

Patents Grantslast 30 patents

Plasma etching device and process

Plasma reactor and process with wafer temperature control

Plasma etching apparatus

Process and gas mixture for etching aluminum

Power supply and method utilizing applied current for increased hys...

Process and gas mixture for etching silicon dioxide and silicon nit...

Computer controlled system for processing semiconductor wafers

Process and gas for treatment of semiconductor devices

Gas plasma reactor for circuit boards and the like

Patents Applicationslast 30 patents

Trademarklast 30 trademarks