Cambridge Electronics, Inc.

Organization

Cambridge, MA, US

Organizations

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Patents Grantslast 30 patents

Information Patent Grant
Transistor structure with a stress layer
- Patent number 11,349,003
- Issue date May 31, 2022
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having buried island regions
- Patent number 10,566,192
- Issue date Feb 18, 2020
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate structures for semiconductor devices
- Patent number 9,911,817
- Issue date Mar 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitively-coupled field-plate structures for semiconductor devices
- Patent number 9,887,268
- Issue date Feb 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid structure with separate controls
- Patent number 9,754,937
- Issue date Sep 5, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-Nitride semiconductors with recess regions and methods of manuf...
- Patent number 9,614,069
- Issue date Apr 4, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a spacer layer
- Patent number 9,536,984
- Issue date Jan 3, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and etch technique for monolithic integrati...
- Patent number 9,502,535
- Issue date Nov 22, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management for a group III-nitride semiconductor device
- Patent number 9,455,342
- Issue date Sep 27, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

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Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS
- Publication number 20220216304
- Publication date Jul 7, 2022
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Diode With A Modified Access Region
- Publication number 20210399145
- Publication date Dec 23, 2021
- Cambridge Electronics, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Cap Layer For RF Operation
- Publication number 20210265477
- Publication date Aug 26, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Modified Drain Access Region
- Publication number 20210167202
- Publication date Jun 3, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Structure With A Stress Layer
- Publication number 20200365394
- Publication date Nov 19, 2020
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR DEVICE WITH A THIN BARRIER
- Publication number 20200357905
- Publication date Nov 12, 2020
- Cambridge Electronics Inc.
- BIN LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170358651
- Publication date Dec 14, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID STRUCTURE WITH SEPARATE CONTROLS
- Publication number 20170256538
- Publication date Sep 7, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...
- Publication number 20170092752
- Publication date Mar 30, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170018617
- Publication date Jan 19, 2017
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
- Publication number 20160351564
- Publication date Dec 1, 2016
- Cambridge Electronics, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...
- Publication number 20160300835
- Publication date Oct 13, 2016
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS

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Trademarklast 30 trademarks

Information Trademark
88818604 - 3DGAN
- Serial number 88818604
- Filing date Mar 3, 2020
- Cambridge Electronics, Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

Cambridge Electronics, Inc.

Organization

Patents Grantslast 30 patents

Transistor structure with a stress layer

Transistor structure having buried island regions

Field-plate structures for semiconductor devices

Capacitively-coupled field-plate structures for semiconductor devices

Hybrid structure with separate controls

III-Nitride semiconductors with recess regions and methods of manuf...

Semiconductor structure with a spacer layer

Semiconductor structure and etch technique for monolithic integrati...

Electric field management for a group III-nitride semiconductor device

Patents Applicationslast 30 patents

III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS

III-Nitride Diode With A Modified Access Region

III-Nitride Transistor With A Cap Layer For RF Operation

III-Nitride Transistor With A Modified Drain Access Region

Transistor Structure With A Stress Layer

III-NITRIDE TRANSISTOR DEVICE WITH A THIN BARRIER

CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

HYBRID STRUCTURE WITH SEPARATE CONTROLS

III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...

FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER

SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...

Trademarklast 30 trademarks

88818604 - 3DGAN