EpiGaN NV

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Hasselt, BE

Organizations

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure comprising an active semiconductor layer of...
- Patent number 9,991,346
- Issue date Jun 5, 2018
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a III-N layer stack with improved passivation lay...
- Patent number 9,847,412
- Issue date Dec 19, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,748,331
- Issue date Aug 29, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers and semiconductor structure
- Patent number 9,543,424
- Issue date Jan 10, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,230,803
- Issue date Jan 5, 2016
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A WAFER SURFACE CURVATURE DETERMINING SYSTEM
- Publication number 20200393241
- Publication date Dec 17, 2020
- EPIGAN NV
- Roland PUSCHE
- G01 - MEASURING TESTING
Information Patent Application
A METHOD FOR FORMING SILICON CARBIDE ONTO A SILICON SUBSTRATE
- Publication number 20200332438
- Publication date Oct 22, 2020
- EpiGaN NV
- Roland PUSCHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20200176593
- Publication date Jun 4, 2020
- EpiGaN NV
- Joff DERLUYN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF...
- Publication number 20170229549
- Publication date Aug 10, 2017
- EpiGaN NV
- Joff DERLUYN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20160099309
- Publication date Apr 7, 2016
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Comprising a III-N Layer Stack With Improved Passivation Lay...
- Publication number 20150008444
- Publication date Jan 8, 2015
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20140167114
- Publication date Jun 19, 2014
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers and Semiconductor Structure
- Publication number 20140159119
- Publication date Jun 12, 2014
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks

Information Trademark
79236779 - EPIGAN
- Serial number 79236779
- Registration number 5677348
- Filing date Jun 6, 2018
- Soitec Belgium NV
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

Organization

Patents Grantslast 30 patents

Semiconductor structure comprising an active semiconductor layer of...

Device comprising a III-N layer stack with improved passivation lay...

Method for growing III-V epitaxial layers

Method for growing III-V epitaxial layers and semiconductor structure

Method for growing III-V epitaxial layers

Patents Applicationslast 30 patents

A WAFER SURFACE CURVATURE DETERMINING SYSTEM

A METHOD FOR FORMING SILICON CARBIDE ONTO A SILICON SUBSTRATE

A HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF...

Method for Growing III-V Epitaxial Layers

Device Comprising a III-N Layer Stack With Improved Passivation Lay...

Method for Growing III-V Epitaxial Layers

Method for Growing III-V Epitaxial Layers and Semiconductor Structure

Trademarklast 30 trademarks

79236779 - EPIGAN