EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD

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Patents Grantslast 30 patents

Information Patent Grant
Method for growth of GaN single crystal, method for preparation of...
- Patent number 8,124,504
- Issue date Feb 28, 2012
- Tohoku Techno Arch Co., Ltd.
- Takafumi Yao
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride semiconductor light emitting device
- Patent number 8,120,047
- Issue date Feb 21, 2012
- Epivalley Co., Ltd.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate fabrication by etching of a peeling layer
- Patent number 8,119,499
- Issue date Feb 21, 2012
- Tohoku Techno Arch Co., Ltd.
- Takafumi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor light emitting device having a multilayer...
- Patent number 8,101,965
- Issue date Jan 24, 2012
- Epivalley Co., Ltd.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor light emitting device
- Patent number 8,053,793
- Issue date Nov 8, 2011
- Epivalley Co., Ltd.
- Eun Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride compound semiconductor light emitting device comprising...
- Patent number 7,999,270
- Issue date Aug 16, 2011
- Epivalley Co., Ltd.
- Eun Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor light emitting device
- Patent number 7,915,636
- Issue date Mar 29, 2011
- Epivalley Co., Ltd.
- Chang Myung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a GaN based optical device
- Patent number 7,863,178
- Issue date Jan 4, 2011
- Epivalley Co., Ltd.
- Tae-Kyung Yoo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growth of GaN single crystal, method for preparation of...
- Patent number 7,829,435
- Issue date Nov 9, 2010
- Tohoku Techno Arch Co., Ltd.
- Takafumi Yao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 7,795,610
- Issue date Sep 14, 2010
- Epivalley Co., Ltd.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride compound semiconductor light emitting device
- Patent number 7,622,742
- Issue date Nov 24, 2009
- Epivalley Co., Ltd.
- Chang-Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a gallium nitride semiconductor light emitt...
- Patent number 7,601,553
- Issue date Oct 13, 2009
- EpiValley Co., Ltd.
- Tae-Kyung Yoo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-nitride compound semiconductor light emitting device
- Patent number 7,547,909
- Issue date Jun 16, 2009
- Epivalley Co., Ltd.
- Joongseo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride compound semiconductor light emitting device
- Patent number 7,501,664
- Issue date Mar 10, 2009
- Epivalley Co., Ltd.
- Tae Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating GaN-based nitride layer
- Patent number 7,498,244
- Issue date Mar 3, 2009
- Epivalley Co., Ltd.
- Soo Kun Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor light emitting device
- Patent number 7,432,534
- Issue date Oct 7, 2008
- Epivalley Co., Ltd.
- Tae-Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for material growth of GaN-based nitride layer
- Patent number 7,393,213
- Issue date Jul 1, 2008
- Epivalley Co., Ltd.
- Tae Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor light emitting device
- Patent number 7,253,451
- Issue date Aug 7, 2007
- Epivalley Co., Ltd.
- Tae-Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor junction structure
- Patent number 7,244,968
- Issue date Jul 17, 2007
- Epivalley Co., Ltd.
- Tae-Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor led device and producing method
- Patent number 7,053,417
- Issue date May 30, 2006
- EpiValley Co., Ltd.
- Chang-Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor LED device and method for manufacturing the same
- Patent number 6,911,676
- Issue date Jun 28, 2005
- EpiValley Co., Ltd.
- Tae-Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting diode
- Patent number 6,828,599
- Issue date Dec 7, 2004
- EpiValley Co., Ltd.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20110233603
- Publication date Sep 29, 2011
- EPIVALLEY CO., LTD.
- Chang-Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20110062487
- Publication date Mar 17, 2011
- EPIVALLEY CO., LTD.
- Ji Won Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20110001158
- Publication date Jan 6, 2011
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANU...
- Publication number 20100289036
- Publication date Nov 18, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dimming Control Method for Display
- Publication number 20100289431
- Publication date Nov 18, 2010
- EPIVALLEY CO., LTD.
- Dong Sel Kim
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
Semiconductor Light-Emitting Device
- Publication number 20100140656
- Publication date Jun 10, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100133579
- Publication date Jun 3, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100127239
- Publication date May 27, 2010
- EPIVALLEY CO., LTD.
- Eun Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100102352
- Publication date Apr 29, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100102338
- Publication date Apr 29, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100102353
- Publication date Apr 29, 2010
- EPIVALLEY CO., LTD.
- Eun Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light Emitting Device and Method of Manufacturing the...
- Publication number 20100102351
- Publication date Apr 29, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20100096651
- Publication date Apr 22, 2010
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light Emitting Device
- Publication number 20090283789
- Publication date Nov 19, 2009
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20090166662
- Publication date Jul 2, 2009
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20090152578
- Publication date Jun 18, 2009
- EPIVALLEY CO., LTD.
- Chang Myung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20090085054
- Publication date Apr 2, 2009
- EPIVALLEY CO., LTD.
- Soo Kun Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device
- Publication number 20090085057
- Publication date Apr 2, 2009
- EPIVALLEY CO., LTD.
- Eun Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- Publication number 20090032835
- Publication date Feb 5, 2009
- EPIVALLEY CO., LTD.
- Joong Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Light Emitting Device And Method For Manu...
- Publication number 20090020771
- Publication date Jan 22, 2009
- EPIVALLEY CO., LTD.
- Chang-Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor light Emitting Device
- Publication number 20080315240
- Publication date Dec 25, 2008
- EPIVALLEY CO., LTD.
- Chang Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Compound Semiconductor Light Emitting Device
- Publication number 20080283865
- Publication date Nov 20, 2008
- EPIVALLEY CO., LTD.
- Tae Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Iii-Nitride Compound Semiconductor Light Emitting Device
- Publication number 20080149917
- Publication date Jun 26, 2008
- EPIVALLEY CO., LTD
- Joongseo Park
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-Nitride Compound Semiconductor Light Emitting Device
- Publication number 20080149918
- Publication date Jun 26, 2008
- EPIVALLEY CO., LTD
- Tae Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for material growth of gan-based nitride layer
- Publication number 20070184567
- Publication date Aug 9, 2007
- EPIVALLEY CO., LTD.
- Tae Kyung Yoo
- C30 - CRYSTAL GROWTH
Information Patent Application
lll-Nitride compound semiconductor light emiting device
- Publication number 20070114511
- Publication date May 24, 2007
- EPIVALLEY Co., Ltd.
- Chang-Tae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride semiconductor light emitting device
- Publication number 20070001179
- Publication date Jan 4, 2007
- EPIVALLEY Co., Ltd.
- Tae-Kyung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Algainn based optical device and fabrication method thereof
- Publication number 20060138446
- Publication date Jun 29, 2006
- EPIVALLEY Co., Ltd.
- Tae-Kyung Yoo
- C30 - CRYSTAL GROWTH
Information Patent Application
Gan-based semiconductor junction structure
- Publication number 20060118914
- Publication date Jun 8, 2006
- EPIVALLEY Co., Ltd.
- Tae-Kyung Yoo
- B82 - NANO-TECHNOLOGY

EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD

Organization

Patents Grantslast 30 patents

Method for growth of GaN single crystal, method for preparation of...

III-nitride semiconductor light emitting device

Semiconductor substrate fabrication by etching of a peeling layer

III-nitride semiconductor light emitting device having a multilayer...

III-nitride semiconductor light emitting device

III-nitride compound semiconductor light emitting device comprising...

III-nitride semiconductor light emitting device

Method for manufacturing a GaN based optical device

Method for growth of GaN single crystal, method for preparation of...

Semiconductor light emitting device

III-nitride compound semiconductor light emitting device

Method of manufacturing a gallium nitride semiconductor light emitt...

III-nitride compound semiconductor light emitting device

III-Nitride compound semiconductor light emitting device

Method for fabricating GaN-based nitride layer

III-nitride semiconductor light emitting device

Method for material growth of GaN-based nitride layer

III-nitride semiconductor light emitting device

GaN-based semiconductor junction structure

Semiconductor led device and producing method

Semiconductor LED device and method for manufacturing the same

Semiconductor light-emitting diode

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT-EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANU...

Dimming Control Method for Display

Semiconductor Light-Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

Semiconductor Light Emitting Device and Method of Manufacturing the...

III-Nitride Semiconductor Light Emitting Device

Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-Nitride Semiconductor Light Emitting Device

III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

III-Nitride Semiconductor Light Emitting Device And Method For Manu...

III-Nitride Semiconductor light Emitting Device

III-Nitride Compound Semiconductor Light Emitting Device

Iii-Nitride Compound Semiconductor Light Emitting Device

III-Nitride Compound Semiconductor Light Emitting Device

Method for material growth of gan-based nitride layer

lll-Nitride compound semiconductor light emiting device

III-nitride semiconductor light emitting device

Algainn based optical device and fabrication method thereof

Gan-based semiconductor junction structure

Trademarklast 30 trademarks