FASL LLC

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Sunnyvale, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Recessed channel with separated ONO memory device
- Patent number 7,394,125
- Issue date Jul 1, 2008
- FASL LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve yield and simplify operation of polymer memory cells
- Patent number 7,122,853
- Issue date Oct 17, 2006
- FASL, Inc.
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Grant
Alignment marks with salicided spacers between bitlines for alignme...
- Patent number 7,098,546
- Issue date Aug 29, 2006
- FASL LLC
- Emmanuil H. Lingunis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with improved charge-trapping dielectric layer
- Patent number 7,074,677
- Issue date Jul 11, 2006
- FASL LLC
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed channel with separated ONO memory device
- Patent number 7,067,377
- Issue date Jun 27, 2006
- FASL LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 7,037,780
- Issue date May 2, 2006
- FASL LLC
- Hideo Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for increasing oxygen content at bottom oxi...
- Patent number 7,033,957
- Issue date Apr 25, 2006
- FASL, LLC
- Hidehiko Shiraiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge performance of a silicon structure and effi...
- Patent number 7,019,366
- Issue date Mar 28, 2006
- FASL LLC
- Nian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of determining voltage compensation for flash memory devices
- Patent number 7,009,887
- Issue date Mar 7, 2006
- FASL LLC
- Ed Hsia
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating gate semiconductor component and method of manufacture
- Patent number 6,984,563
- Issue date Jan 10, 2006
- FASL LLC
- Kelley Kyle Higgins, Sr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for manufacturing semiconductor device
- Patent number 6,979,577
- Issue date Dec 27, 2005
- FASL LLC
- Tohru Higashi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Test structure for characterizing junction leakage current
- Patent number 6,977,195
- Issue date Dec 20, 2005
- Fasl, LLC
- John J. Bush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for reducing oxygen vacancy content in bott...
- Patent number 6,969,886
- Issue date Nov 29, 2005
- Fasl, LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method of fabrication thereof including a b...
- Patent number 6,958,511
- Issue date Oct 25, 2005
- Fasl, LLC
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of nitride layer with reduced hydrogen cont...
- Patent number 6,955,965
- Issue date Oct 18, 2005
- Fasl, LLC
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of spacer layer with reduced hydrogen conte...
- Patent number 6,949,481
- Issue date Sep 27, 2005
- Fasl, LLC
- Arvind Halliyal
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of formation of semiconductor resistant to hot carrier injec...
- Patent number 6,949,433
- Issue date Sep 27, 2005
- FASL LLC
- Shiraiwa Hidehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to obtain temperature independent program threshold voltage...
- Patent number 6,944,057
- Issue date Sep 13, 2005
- FASL LLC
- Edward F. Runnion
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a memory device having reverse LDD
- Patent number 6,936,515
- Issue date Aug 30, 2005
- FASL LLP
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having high work function gate and method of erasing...
- Patent number 6,912,163
- Issue date Jun 28, 2005
- Fasl, LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory with deuterated mate...
- Patent number 6,884,681
- Issue date Apr 26, 2005
- FASL LLC
- Tazrien Kamal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,873,022
- Issue date Mar 29, 2005
- FASL LLC
- Yukio Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground structure for page read and page write for flash memory
- Patent number 6,859,393
- Issue date Feb 22, 2005
- Fasl, LLC
- Tien-Chun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
I/O based column redundancy for virtual ground with 2-bit cell flas...
- Patent number 6,813,735
- Issue date Nov 2, 2004
- Fasl, LLC
- Kazuhiro Kurihara
- G11 - INFORMATION STORAGE
Information Patent Grant
Innovative method of hard mask removal
- Patent number 6,809,033
- Issue date Oct 26, 2004
- Fasl, LLC
- Angela Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner for semiconductor memories and manufacturing method therefor
- Patent number 6,803,265
- Issue date Oct 12, 2004
- FASL LLC
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ONO fabrication process for reducing oxygen vacancy content in bott...
- Patent number 6,803,275
- Issue date Oct 12, 2004
- Fasl, LLC
- Jaeyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory read circuit with end of life simulation
- Patent number 6,791,880
- Issue date Sep 14, 2004
- Fasl, LLC
- Kazuhiro Kurihara
- G11 - INFORMATION STORAGE
Information Patent Grant
Salicided gate for virtual ground arrays
- Patent number 6,730,564
- Issue date May 4, 2004
- Fasl, LLC
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy wordline for erase and bitline leakage
- Patent number 6,707,078
- Issue date Mar 16, 2004
- Fasl, LLC
- Hidehiko Shiraiwa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor memory device and method of fabricating the same
- Publication number 20060145242
- Publication date Jul 6, 2006
- FASL LLC
- Hideo Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for manufacturing semiconductor device
- Publication number 20060039011
- Publication date Feb 23, 2006
- FASL, LLC.
- Tohru Higashi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Bond pad structure for copper metallization having increased reliab...
- Publication number 20060006552
- Publication date Jan 12, 2006
- FASL, LLC.
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and manufacturing method thereof
- Publication number 20050224866
- Publication date Oct 13, 2005
- FASL LLC
- Masahiko Higashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for low Vss resistance and reduced dibl in a f...
- Publication number 20050164450
- Publication date Jul 28, 2005
- FASL, LLC, a limited liability company
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and method of fabricating the same
- Publication number 20040110390
- Publication date Jun 10, 2004
- FASL LLC
- Hideo Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor device
- Publication number 20040097098
- Publication date May 20, 2004
- FUJITSU LIMITED
- Yoshimasa Nagakura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Organization

Patents Grantslast 30 patents

Recessed channel with separated ONO memory device

Method to improve yield and simplify operation of polymer memory cells

Alignment marks with salicided spacers between bitlines for alignme...

Memory with improved charge-trapping dielectric layer

Recessed channel with separated ONO memory device

Semiconductor memory device and method of fabricating the same

ONO fabrication process for increasing oxygen content at bottom oxi...

Electrostatic discharge performance of a silicon structure and effi...

Method of determining voltage compensation for flash memory devices

Floating gate semiconductor component and method of manufacture

Method and apparatus for manufacturing semiconductor device

Test structure for characterizing junction leakage current

ONO fabrication process for reducing oxygen vacancy content in bott...

Flash memory device and method of fabrication thereof including a b...

Process for fabrication of nitride layer with reduced hydrogen cont...

Process for fabrication of spacer layer with reduced hydrogen conte...

Method of formation of semiconductor resistant to hot carrier injec...

Method to obtain temperature independent program threshold voltage...

Method for fabricating a memory device having reverse LDD

Memory device having high work function gate and method of erasing...

Method of manufacturing a semiconductor memory with deuterated mate...

Semiconductor device and method for manufacturing the same

Ground structure for page read and page write for flash memory

I/O based column redundancy for virtual ground with 2-bit cell flas...

Innovative method of hard mask removal

Liner for semiconductor memories and manufacturing method therefor

ONO fabrication process for reducing oxygen vacancy content in bott...

Non-volatile memory read circuit with end of life simulation

Salicided gate for virtual ground arrays

Dummy wordline for erase and bitline leakage

Patents Applicationslast 30 patents

Semiconductor memory device and method of fabricating the same

Method and apparatus for manufacturing semiconductor device

Bond pad structure for copper metallization having increased reliab...

Semiconductor memory device and manufacturing method thereof

Structure and method for low Vss resistance and reduced dibl in a f...

Semiconductor memory device and method of fabricating the same

Method for fabricating a semiconductor device

Trademarklast 30 trademarks