FORCE MOS TECHNOLOGY CO., LTD.

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HsinChu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Metal-oxide semiconductor module and light-emitting diode display d...
- Patent number 11,450,708
- Issue date Sep 20, 2022
- Macroblock, Inc.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device
- Patent number 11,056,488
- Issue date Jul 6, 2021
- Force Mos Technology Co., Ltd.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate MOSFET and fabricating method thereof
- Patent number 10,700,175
- Issue date Jun 30, 2020
- Force Mos Technology Co., Ltd.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having shielded gate structure and ESD c...
- Patent number 9,953,969
- Issue date Apr 24, 2018
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a super-junction structures having implant...
- Patent number 9,530,867
- Issue date Dec 27, 2016
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with shielded gate and diffused drift region
- Patent number 9,530,882
- Issue date Dec 27, 2016
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFETs with closed cell layout having shield...
- Patent number 9,412,810
- Issue date Aug 9, 2016
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFETs with closed cell layout
- Patent number 9,337,328
- Issue date May 10, 2016
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFET structure
- Patent number 9,293,527
- Issue date Mar 22, 2016
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction structures having implanted regions surrounding an N...
- Patent number 9,099,320
- Issue date Aug 4, 2015
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche capability improvement in power semiconductor devices usi...
- Patent number 9,018,701
- Issue date Apr 28, 2015
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFETs with short terminations
- Patent number 8,999,789
- Issue date Apr 7, 2015
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFETs with short terminations
- Patent number 9,000,515
- Issue date Apr 7, 2015
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching trench MOSFET
- Patent number 8,907,415
- Issue date Dec 9, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with trenched floating gates having thick trench bott...
- Patent number 8,889,513
- Issue date Nov 18, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET having a top side drain
- Patent number 8,889,514
- Issue date Nov 18, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast switching super-junction trench MOSFETs
- Patent number 8,829,607
- Issue date Sep 9, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate MOSFET-Schottky rectifier-diode integrated circuits w...
- Patent number 8,816,348
- Issue date Aug 26, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with trenched floating gates having thick trench bott...
- Patent number 8,759,910
- Issue date Jun 24, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench MOSFET with trench Schottky rectifier
- Patent number 8,722,434
- Issue date May 13, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor field effect transistor with embed...
- Patent number 8,723,317
- Issue date May 13, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor field effect transistor with multi...
- Patent number 8,704,297
- Issue date Apr 22, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having wide termination trench and self-...
- Patent number 8,686,468
- Issue date Apr 1, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET having floating dummy cells for avalanche improvement
- Patent number 8,680,610
- Issue date Mar 25, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device integrated with ESD protection diodes
- Patent number 8,658,492
- Issue date Feb 25, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET having a top side drain
- Patent number 8,653,587
- Issue date Feb 18, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Qgd trench MOSFET integrated with schottky rectifier
- Patent number 8,653,589
- Issue date Feb 18, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with ultra high cell density and manufacture thereof
- Patent number 8,652,900
- Issue date Feb 18, 2014
- Force MOS Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction trench MOSFET with multiple trenched source-body con...
- Patent number 8,648,413
- Issue date Feb 11, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded trench MOSFET with multiple trenched floating gates as ter...
- Patent number 8,643,092
- Issue date Feb 4, 2014
- Force Mos Technology Co., Ltd.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-CHIP PACKAGE DEVICE
- Publication number 20250022846
- Publication date Jan 16, 2025
- FORCE MOS TECHNOLOGY CO., LTD.
- YUAN-SHUN CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A MULTI-CHIP PACKAGE DEVICE
- Publication number 20250022721
- Publication date Jan 16, 2025
- FORCE MOS TECHNOLOGY CO., LTD.
- YUAN-SHUN CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20230411470
- Publication date Dec 21, 2023
- FORCE MOS TECHNOLOGY CO., LTD.
- Kao-Way TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR MODULE AND LIGHT-EMITTING DIODE DISPLAY D...
- Publication number 20210126047
- Publication date Apr 29, 2021
- Macroblock, Inc.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Oxide-Semiconductor Device
- Publication number 20200251468
- Publication date Aug 6, 2020
- FORCE MOS TECHNOLOGY CO., LTD.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielded Gate MOSFET and Fabricating Method Thereof
- Publication number 20200105890
- Publication date Apr 2, 2020
- FORCE MOS TECHNOLOGY CO., LTD.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION TRENCH MOSFET INTEGRATED WITH EMBEDDED TRENCH SCHOTT...
- Publication number 20160104702
- Publication date Apr 14, 2016
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING TH...
- Publication number 20150221733
- Publication date Aug 6, 2015
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N...
- Publication number 20150076594
- Publication date Mar 19, 2015
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS
- Publication number 20150037954
- Publication date Feb 5, 2015
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS
- Publication number 20140346593
- Publication date Nov 27, 2014
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVIN...
- Publication number 20140291753
- Publication date Oct 2, 2014
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL TRENCH MOSFETS
- Publication number 20140159149
- Publication date Jun 12, 2014
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET HAVING A TOP SIDE DRAIN
- Publication number 20140120672
- Publication date May 1, 2014
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES USI...
- Publication number 20140048872
- Publication date Feb 20, 2014
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTT...
- Publication number 20130330892
- Publication date Dec 12, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTT...
- Publication number 20130307066
- Publication date Nov 21, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS
- Publication number 20130299901
- Publication date Nov 14, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE INTEGRATED WITH CLAMP DIODES HAVING DOPA...
- Publication number 20130234237
- Publication date Sep 12, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES
- Publication number 20130234238
- Publication date Sep 12, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRENCH MOSFET WITH TRENCH SCHOTTKY RECTIFIER
- Publication number 20130214350
- Publication date Aug 22, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET HAVING A TOP SIDE DRAIN
- Publication number 20130207172
- Publication date Aug 15, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TRENCH AND SELF-...
- Publication number 20130168731
- Publication date Jul 4, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH RESURF STEPPED OXIDE AND DIFFUSED DRIFT REGION
- Publication number 20130168760
- Publication date Jul 4, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR POWER DEVICE INTEGRATRED WITH IMPROVED GATE SOURCE...
- Publication number 20130092976
- Publication date Apr 18, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE
- Publication number 20130075810
- Publication date Mar 28, 2013
- FORCE MOS TECHNOLOGY CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE WITH EMBEDDED DIODES AND RESISTORS USING...
- Publication number 20130075809
- Publication date Mar 28, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CON...
- Publication number 20130020577
- Publication date Jan 24, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS W...
- Publication number 20130020576
- Publication date Jan 24, 2013
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST SWITCHING HYBRID IGBT DEVICE WITH TRENCHED CONTACTS
- Publication number 20120313141
- Publication date Dec 13, 2012
- FORCE MOS TECHNOLOGY CO. LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS

FORCE MOS TECHNOLOGY CO., LTD.

Organization

Patents Grantslast 30 patents

Metal-oxide semiconductor module and light-emitting diode display d...

Metal-oxide-semiconductor device

Shielded gate MOSFET and fabricating method thereof

Semiconductor power device having shielded gate structure and ESD c...

Method for manufacturing a super-junction structures having implant...

Trench MOSFET with shielded gate and diffused drift region

Super-junction trench MOSFETs with closed cell layout having shield...

Super-junction trench MOSFETs with closed cell layout

Super-junction trench MOSFET structure

Super-junction structures having implanted regions surrounding an N...

Avalanche capability improvement in power semiconductor devices usi...

Super-junction trench MOSFETs with short terminations

Super-junction trench MOSFETs with short terminations

High switching trench MOSFET

Trench MOSFET with trenched floating gates having thick trench bott...

Trench MOSFET having a top side drain

Fast switching super-junction trench MOSFETs

Shielded gate MOSFET-Schottky rectifier-diode integrated circuits w...

Trench MOSFET with trenched floating gates having thick trench bott...

Integrated trench MOSFET with trench Schottky rectifier

Trench metal oxide semiconductor field effect transistor with embed...

Trench metal oxide semiconductor field effect transistor with multi...

Semiconductor power device having wide termination trench and self-...

Trench MOSFET having floating dummy cells for avalanche improvement

Semiconductor power device integrated with ESD protection diodes

Trench MOSFET having a top side drain

Low Qgd trench MOSFET integrated with schottky rectifier

Trench MOSFET with ultra high cell density and manufacture thereof

Super-junction trench MOSFET with multiple trenched source-body con...

Shielded trench MOSFET with multiple trenched floating gates as ter...

Patents Applicationslast 30 patents

MULTI-CHIP PACKAGE DEVICE

METHOD OF MAKING A MULTI-CHIP PACKAGE DEVICE

TRENCH-GATE FIELD EFFECT TRANSISTOR

METAL-OXIDE SEMICONDUCTOR MODULE AND LIGHT-EMITTING DIODE DISPLAY D...

Metal-Oxide-Semiconductor Device

Shielded Gate MOSFET and Fabricating Method Thereof

SUPER-JUNCTION TRENCH MOSFET INTEGRATED WITH EMBEDDED TRENCH SCHOTT...

TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING TH...

SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N...

SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS

SUPER-JUNCTION TRENCH MOSFETS WITH SHORT TERMINATIONS

TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVIN...

SHORT CHANNEL TRENCH MOSFETS

TRENCH MOSFET HAVING A TOP SIDE DRAIN

AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES USI...

TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTT...

TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTT...

TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS

SEMICONDUCTOR POWER DEVICE INTEGRATED WITH CLAMP DIODES HAVING DOPA...

SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES

INTEGRATED TRENCH MOSFET WITH TRENCH SCHOTTKY RECTIFIER

TRENCH MOSFET HAVING A TOP SIDE DRAIN

SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TRENCH AND SELF-...

TRENCH MOSFET WITH RESURF STEPPED OXIDE AND DIFFUSED DRIFT REGION

A SEMICONDUCTOR POWER DEVICE INTEGRATRED WITH IMPROVED GATE SOURCE...

SEMICONDUCTOR POWER DEVICES INTEGRATED WITH A TRENCHED CLAMP DIODE

SEMICONDUCTOR POWER DEVICE WITH EMBEDDED DIODES AND RESISTORS USING...

MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CON...

SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS W...

FAST SWITCHING HYBRID IGBT DEVICE WITH TRENCHED CONTACTS

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