Force-MOS Technology Corporation

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Grand Cayman, KY

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Patents Grantslast 30 patents

Information Patent Grant
Trenched MOSFETS with improved gate-drain (GD) clamp diodes
- Patent number 8,389,354
- Issue date Mar 5, 2013
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing trenched MOSFETs with embedded Schottky in...
- Patent number 8,252,645
- Issue date Aug 28, 2012
- Force-MOS Technology Corporation
- Fwu-ruan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device configuration and method to manufacture trench MOSFET with s...
- Patent number 7,646,058
- Issue date Jan 12, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFET device configuration with reduced mask processes
- Patent number 7,612,407
- Issue date Nov 3, 2009
- Force-MOS Technology Corp. Ltd
- Fwu-Juan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFETs with improved gate-drain (GD) clamp diodes
- Patent number 7,511,357
- Issue date Mar 31, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

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