GREAT POWER SEMICONDUCTOR CORP.

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TAIPEI COUNTY, TW

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Patents Grantslast 30 patents

Information Patent Grant
Trenched power MOSFET with enhanced breakdown voltage and fabricati...
- Patent number 9,214,531
- Issue date Dec 15, 2015
- Great Power Semiconductor Corp.
- Chun-Ying Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched power MOSFET with enhanced breakdown voltage and fabricati...
- Patent number 8,975,691
- Issue date Mar 10, 2015
- Great Power Semiconductor Corp.
- Chun-Ying Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET structure with high cell density and fabricatio...
- Patent number 8,900,950
- Issue date Dec 2, 2014
- Great Power Semiconductor Corp.
- Hsiu-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET and fabrication method thereof
- Patent number 8,872,265
- Issue date Oct 28, 2014
- Great Power Semiconductor Corp.
- Chun-Ying Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of trenched power semiconductor device with sour...
- Patent number 8,846,469
- Issue date Sep 30, 2014
- Great Power Semiconductor Corp.
- Chun Ying Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched power semiconductor device and fabrication method thereof
- Patent number 8,735,249
- Issue date May 27, 2014
- Great Power Semiconductor Corp.
- Yi-Yun Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate a closed cell trench power MOSFET structure
- Patent number 8,569,134
- Issue date Oct 29, 2013
- Great Power Semiconductor Corp.
- Hsiu Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor structure with schottky diode
- Patent number 8,525,256
- Issue date Sep 3, 2013
- Great Power Semiconductor Corp.
- Hsiu Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with trench bottom polysilicon and fabri...
- Patent number 8,445,958
- Issue date May 21, 2013
- Great Power Semiconductor Corp.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET structure with high switching speed and fabrica...
- Patent number 8,421,149
- Issue date Apr 16, 2013
- Great Power Semiconductor Corp.
- Yuan-Shun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor structure with field effect rectifier and fabri...
- Patent number 8,357,952
- Issue date Jan 22, 2013
- Great Power Semiconductor Corp.
- Kao-Way Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a power semicondutor structure with schottky...
- Patent number 8,354,315
- Issue date Jan 15, 2013
- Great Power Semiconductor Corp.
- Hsiu Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Closed cell trench power MOSFET structure
- Patent number 8,304,828
- Issue date Nov 6, 2012
- Great Power Semiconductor Corp.
- Hsiu Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of power semiconductor structure with reduced ga...
- Patent number 8,153,490
- Issue date Apr 10, 2012
- Great Power Semiconductor Corp.
- Hsiu-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of power semiconductor structure with low gate c...
- Patent number 8,080,457
- Issue date Dec 20, 2011
- Great Power Semiconductor Corp.
- Hsiu-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched power semiconductor structure with schottky diode and fabr...
- Patent number 7,994,001
- Issue date Aug 9, 2011
- Great Power Semiconductor Corp.
- Hsiu Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS

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Patents Applicationslast 30 patents

Information Patent Application
TRENCHED POWER MOSFET WITH ENHANCED BREAKDOWN VOLTAGE AND FABRICATI...
- Publication number 20140120670
- Publication date May 1, 2014
- GREAT POWER SEMICONDUCTOR CORP.
- Chun Ying YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED POWER MOSFET WITH ENHANCED BREAKDOWN VOLTAGE AND FABRICATI...
- Publication number 20140042534
- Publication date Feb 13, 2014
- GREAT POWER SEMICONDUCTOR CORP.
- Chun Ying YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER MOSFET AND FABRICATION METHOD THEREOF
- Publication number 20130292761
- Publication date Nov 7, 2013
- GREAT POWER SEMICONDUCTOR CORP.
- CHUN YING YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF TRENCHED POWER SEMICONDUCTOR DEVICE WITH SOUR...
- Publication number 20120322217
- Publication date Dec 20, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- CHUN YING YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED POWER SEMICONDUCTOR STRUCTURE WITH REDUCED GATE IMPEDANCE...
- Publication number 20120309177
- Publication date Dec 6, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER MOSFET STRUCTURE WITH HIGH SWITCHING SPEED AND FABRICA...
- Publication number 20120299109
- Publication date Nov 29, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- YUAN-SHUN CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20120299091
- Publication date Nov 29, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- YI-YUN TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLOSED CELL TRENCH POWER MOSFET STRUCTURE AND METHOD TO FABRICATE T...
- Publication number 20120295411
- Publication date Nov 22, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR STRUCTURE WITH SCHOTTKY DIODE AND FABRICATION M...
- Publication number 20120267713
- Publication date Oct 25, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER MOSFET STRUCTURE WITH HIGH CELL DENSITY AND FABRICATIO...
- Publication number 20120256258
- Publication date Oct 11, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF INTEGRATING POWER TRANSISTOR AND SCHOTTKY DIO...
- Publication number 20120040503
- Publication date Feb 16, 2012
- GREAT POWER SEMICONDUCTOR CORP.
- KAO-WAY TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR STRUCTURE WITH SCHOTTKY DIODE AND FABRICATION M...
- Publication number 20110316077
- Publication date Dec 29, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SELF-ALIGNED TRENCHED POWER SEMICONDUCTOR STR...
- Publication number 20110306194
- Publication date Dec 15, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- Chun Ying YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH TRENCH BOTTOM POLYSILICON AND FABRI...
- Publication number 20110298042
- Publication date Dec 8, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- KAO-WAY TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR STRUCTURE WITH FIELD EFFECT RECTIFIER AND FABRI...
- Publication number 20110278642
- Publication date Nov 17, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- KAO-WAY TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLOSED CELL TRENCH POWER MOSFET STRUCTURE AND METHOD TO FABRICATE T...
- Publication number 20110227149
- Publication date Sep 22, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CELL DENSITY TRENCHED POWER SEMICONDUCTOR STRUCTURE AND FABRIC...
- Publication number 20110215397
- Publication date Sep 8, 2011
- GREAT POWER SEMICONDUCTOR CORP.
- HSIU WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS

GREAT POWER SEMICONDUCTOR CORP.

Organization

Patents Grantslast 30 patents

Trenched power MOSFET with enhanced breakdown voltage and fabricati...

Trenched power MOSFET with enhanced breakdown voltage and fabricati...

Trench power MOSFET structure with high cell density and fabricatio...

Trench power MOSFET and fabrication method thereof

Fabrication method of trenched power semiconductor device with sour...

Trenched power semiconductor device and fabrication method thereof

Method to fabricate a closed cell trench power MOSFET structure

Power semiconductor structure with schottky diode

Power semiconductor device with trench bottom polysilicon and fabri...

Trench power MOSFET structure with high switching speed and fabrica...

Power semiconductor structure with field effect rectifier and fabri...

Fabrication method of a power semicondutor structure with schottky...

Closed cell trench power MOSFET structure

Fabrication method of power semiconductor structure with reduced ga...

Fabrication method of power semiconductor structure with low gate c...

Trenched power semiconductor structure with schottky diode and fabr...

Patents Applicationslast 30 patents

TRENCHED POWER MOSFET WITH ENHANCED BREAKDOWN VOLTAGE AND FABRICATI...

TRENCHED POWER MOSFET WITH ENHANCED BREAKDOWN VOLTAGE AND FABRICATI...

TRENCH POWER MOSFET AND FABRICATION METHOD THEREOF

FABRICATION METHOD OF TRENCHED POWER SEMICONDUCTOR DEVICE WITH SOUR...

TRENCHED POWER SEMICONDUCTOR STRUCTURE WITH REDUCED GATE IMPEDANCE...

TRENCH POWER MOSFET STRUCTURE WITH HIGH SWITCHING SPEED AND FABRICA...

TRENCHED POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

CLOSED CELL TRENCH POWER MOSFET STRUCTURE AND METHOD TO FABRICATE T...

POWER SEMICONDUCTOR STRUCTURE WITH SCHOTTKY DIODE AND FABRICATION M...

TRENCH POWER MOSFET STRUCTURE WITH HIGH CELL DENSITY AND FABRICATIO...

FABRICATION METHOD OF INTEGRATING POWER TRANSISTOR AND SCHOTTKY DIO...

POWER SEMICONDUCTOR STRUCTURE WITH SCHOTTKY DIODE AND FABRICATION M...

FABRICATION METHOD OF SELF-ALIGNED TRENCHED POWER SEMICONDUCTOR STR...

POWER SEMICONDUCTOR DEVICE WITH TRENCH BOTTOM POLYSILICON AND FABRI...

POWER SEMICONDUCTOR STRUCTURE WITH FIELD EFFECT RECTIFIER AND FABRI...

CLOSED CELL TRENCH POWER MOSFET STRUCTURE AND METHOD TO FABRICATE T...

HIGH CELL DENSITY TRENCHED POWER SEMICONDUCTOR STRUCTURE AND FABRIC...