Hestia Power Inc.

Organization

Hsinchu City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor power device
- Patent number 10,497,777
- Issue date Dec 3, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,483,389
- Issue date Nov 19, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,418,476
- Issue date Sep 17, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intelligent power module operable to be driven by negative gate vol...
- Patent number 10,396,774
- Issue date Aug 27, 2019
- Hestia Power Inc.
- Chien-Chung Hung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide semiconductor element and manufacturing method thereof
- Patent number 10,020,368
- Issue date Jul 10, 2018
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device with adjustable voltage level
- Patent number 9,761,703
- Issue date Sep 12, 2017
- Hestia Power Inc.
- Fu-Jen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field effect transistor
- Patent number 9,685,552
- Issue date Jun 20, 2017
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacture thereof
- Patent number 9,373,713
- Issue date Jun 21, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC junction barrier controlled schottky rectifier
- Patent number 9,368,650
- Issue date Jun 14, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,246,016
- Issue date Jan 26, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device equipped with termination structure
- Patent number 9,018,640
- Issue date Apr 28, 2015
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE INTEGRATING CLAMPER CIRCUIT FO...
- Publication number 20200161466
- Publication date May 21, 2020
- Hestia Power Inc.
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTELLIGENT POWER MODULE OPERABLE TO BE DRIVEN BY NEGATIVE GATE VOL...
- Publication number 20190181849
- Publication date Jun 13, 2019
- Hestia Power Inc.
- Chien-Chung Hung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20190081136
- Publication date Mar 14, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20170250275
- Publication date Aug 31, 2017
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20170207305
- Publication date Jul 20, 2017
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20160141412
- Publication date May 19, 2016
- Hestia Power Inc.
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE FIELD EFFECT TRANSISTOR
- Publication number 20160126346
- Publication date May 5, 2016
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160111533
- Publication date Apr 21, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160005883
- Publication date Jan 7, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE
- Publication number 20150102362
- Publication date Apr 16, 2015
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS

Hestia Power Inc.

Organization

Patents Grantslast 30 patents

Semiconductor power device

Silicon carbide semiconductor device

Silicon carbide semiconductor device

Intelligent power module operable to be driven by negative gate vol...

Silicon carbide semiconductor element and manufacturing method thereof

Wide bandgap semiconductor device with adjustable voltage level

Silicon carbide field effect transistor

Silicon carbide semiconductor device and method of manufacture thereof

SiC junction barrier controlled schottky rectifier

Silicon carbide semiconductor device

Silicon carbide power device equipped with termination structure

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE INTEGRATING CLAMPER CIRCUIT FO...

INTELLIGENT POWER MODULE OPERABLE TO BE DRIVEN BY NEGATIVE GATE VOL...

SEMICONDUCTOR POWER DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

SILICON CARBIDE FIELD EFFECT TRANSISTOR

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE

Trademarklast 30 trademarks