HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Edge termination designs for super junction device
- Patent number 11,222,962
- Issue date Jan 11, 2022
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,923,588
- Issue date Feb 16, 2021
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top structure of super junction MOSFETs and methods of fabrication
- Patent number 10,896,959
- Issue date Jan 19, 2021
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of trench MOSFET devices
- Patent number 10,622,445
- Issue date Apr 14, 2020
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,038,089
- Issue date Jul 31, 2018
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TOP STRUCTURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH IMPR...
- Publication number 20190334019
- Publication date Oct 31, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF TRENCH MOSFET DEVICES
- Publication number 20190067469
- Publication date Feb 28, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
- Publication number 20190027596
- Publication date Jan 24, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun HU
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks