INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC

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Dongguan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Bidirectional MOS device and method for preparing the same
- Patent number 9,905,682
- Issue date Feb 27, 2018
- University of Electronic Science and Technology of China
- Jinping Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional insulated gate bipolar transistor
- Patent number 9,741,837
- Issue date Aug 22, 2017
- University of Electronic Science and Technology of China
- Jinping Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIDIRECTIONAL MOS DEVICE AND METHOD FOR PREPARING THE SAME
- Publication number 20170084728
- Publication date Mar 23, 2017
- University of Electronic Science and Technology of China
- Jinping ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20160322483
- Publication date Nov 3, 2016
- University of Electronic Science and Technology of China
- Jinping ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks