INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING OF UESTC IN GUANGDONG

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DONGGUAN, CN

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Patents Grantslast 30 patents

Information Patent Grant
Trench MOS device with improved single event burn-out endurance
- Patent number 10,546,951
- Issue date Jan 28, 2020
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Folded termination with internal field plate
- Patent number 10,340,332
- Issue date Jul 2, 2019
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Level shifter circuit for gate driving of gate control device
- Patent number 10,158,350
- Issue date Dec 18, 2018
- University of Electronic Science and Technology of China
- Zehong Li
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Gate charge and discharge regulating circuit for gate control device
- Patent number 10,135,426
- Issue date Nov 20, 2018
- University of Electronic Science and Technology of China
- Zehong Li
- H03 - BASIC ELECTRONIC CIRCUITRY

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Patents Applicationslast 30 patents

Information Patent Application
TERMINATION STRUCTURE OF SUPER-JUNCTION POWER DEVICE
- Publication number 20230352576
- Publication date Nov 2, 2023
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230129440
- Publication date Apr 27, 2023
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230036698
- Publication date Feb 2, 2023
- University of Electronic Science and Technology of China
- Ruize SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE
- Publication number 20190371937
- Publication date Dec 5, 2019
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Folded Termination with Internal Field Plate
- Publication number 20190067415
- Publication date Feb 28, 2019
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIPPLE PRE-AMPLIFICATION BASED FULLY INTEGRATED LOW DROPOUT REGULATOR
- Publication number 20190004553
- Publication date Jan 3, 2019
- University of Electronic Science and Technology of China
- Xin MING
- H03 - BASIC ELECTRONIC CIRCUITRY

INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING OF UESTC IN GUANGDONG

Organization

Patents Grantslast 30 patents

Trench MOS device with improved single event burn-out endurance

Folded termination with internal field plate

Level shifter circuit for gate driving of gate control device

Gate charge and discharge regulating circuit for gate control device

Patents Applicationslast 30 patents

TERMINATION STRUCTURE OF SUPER-JUNCTION POWER DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR

TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE

Folded Termination with Internal Field Plate

RIPPLE PRE-AMPLIFICATION BASED FULLY INTEGRATED LOW DROPOUT REGULATOR