Kansai Electric Power C.C., Inc.

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Osaka, JP

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SiC wafer, SiC semiconductor device, and production method of SiC w...
- Patent number 6,734,461
- Issue date May 11, 2004
- Sixon Inc.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
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Sic single crystal and method for growing the same
- Patent number 6,660,084
- Issue date Dec 9, 2003
- Sixon, Inc.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH

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