MaglC Technologies, Inc.

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Patents Grantslast 30 patents

Patents Applicationslast 30 patents

Information Patent Application
Reference cell architectures for small memory array block activation
- Publication number 20120099358
- Publication date Apr 26, 2012
- MaglC Technologies, Inc.
- Toshio Sunaga
- G11 - INFORMATION STORAGE
Information Patent Application
Spacer structure in MRAM cell and method of its fabrication
- Publication number 20110117677
- Publication date May 19, 2011
- MaglC Technologies, Inc.
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to fabricate high performance MTJ devices for...
- Publication number 20110014500
- Publication date Jan 20, 2011
- MaglC Technologies, Inc.
- Cheng T. Horng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Hafnium doped cap and free layer for mram device
- Publication number 20100136713
- Publication date Jun 3, 2010
- MaglC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM with enhanced programming margin
- Publication number 20080253178
- Publication date Oct 16, 2008
- MaglC Technologies, Inc.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Reference cell scheme for MRAM
- Publication number 20080094884
- Publication date Apr 24, 2008
- MaglC Technologies, Inc.
- Hsu Kai Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack...
- Publication number 20070243638
- Publication date Oct 18, 2007
- MaglC Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM with super-paramagnetic sensing layer
- Publication number 20070034919
- Publication date Feb 15, 2007
- MaglC Technologies, Inc.
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS

MaglC Technologies, Inc.

Organization

Patents Grantslast 30 patents

Patents Applicationslast 30 patents

Reference cell architectures for small memory array block activation

Spacer structure in MRAM cell and method of its fabrication

Structure and method to fabricate high performance MTJ devices for...

Hafnium doped cap and free layer for mram device

MRAM with enhanced programming margin

Reference cell scheme for MRAM

Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack...

MRAM with super-paramagnetic sensing layer

Trademarklast 30 trademarks