Nami MOS CO., LTD.

Organization

New Taipei City, TW

Organizations

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Patents Grantslast 30 patents

Information Patent Grant
SiC trench MOSFET with low on-resistance and switching loss
- Patent number 11,777,000
- Issue date Oct 3, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,600,725
- Issue date Mar 7, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET with ESD diode manufactured using two p...
- Patent number 11,515,303
- Issue date Nov 29, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC super junction trench MOSFET
- Patent number 11,462,638
- Issue date Oct 4, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET having improved specific on-resistance...
- Patent number 11,444,164
- Issue date Sep 13, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET integrated with super barrier rectifier...
- Patent number 11,380,787
- Issue date Jul 5, 2022
- NAMI MOS CO, LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,329,155
- Issue date May 10, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET integrated with super barrier rectifier
- Patent number 11,114,558
- Issue date Sep 7, 2021
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET with ESD diode manufactured using two p...
- Patent number 11,018,127
- Issue date May 25, 2021
- NAMI MOS CO, LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs having dummy cells for avalanche capability improvement
- Patent number 11,004,969
- Issue date May 11, 2021
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFETs with floating trenched gates and chann...
- Patent number 10,930,774
- Issue date Feb 23, 2021
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

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Patents Applicationslast 30 patents

Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE
- Publication number 20240363698
- Publication date Oct 31, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS
- Publication number 20240347607
- Publication date Oct 17, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Pillar- Shaped Shielded gate structures
- Publication number 20240186385
- Publication date Jun 6, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH HEXAGONAL DEEP TRENCH LAYOUTS AND...
- Publication number 20240186265
- Publication date Jun 6, 2024
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TERMINATION STRUCTURES
- Publication number 20240128369
- Publication date Apr 18, 2024
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERFUNCTION MOSFETS HAVING SHIELDED GATE TRENCH STRUCTURES
- Publication number 20240030280
- Publication date Jan 25, 2024
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...
- Publication number 20230343867
- Publication date Oct 26, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...
- Publication number 20230343866
- Publication date Oct 26, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED PERFORMANCE STRUCTURES
- Publication number 20230327013
- Publication date Oct 12, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET WITH MULTIPLE STEPPED EPITAXIAL STRUCTURES
- Publication number 20230010328
- Publication date Jan 12, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SUPER JUNCTION TRENCH MOSFET
- Publication number 20220367710
- Publication date Nov 17, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH MOSFET WITH LOW ON-RESISTANCE AND SWITCHING LOSS
- Publication number 20220367636
- Publication date Nov 17, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN IMPROVED SHIELDED GATE TRENCH MOSFET WITH LOW ON-RESISTANCE
- Publication number 20220293786
- Publication date Sep 15, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...
- Publication number 20220231167
- Publication date Jul 21, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET HAVING IMPROVED SPECIFIC ON-RESISTANCE...
- Publication number 20220149161
- Publication date May 12, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SUPER JUNCTION TRENCH MOSFET
- Publication number 20220123140
- Publication date Apr 21, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...
- Publication number 20220045184
- Publication date Feb 10, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET HAVING SUPER JUNCTION SURROUNDING LOWER...
- Publication number 20210384346
- Publication date Dec 9, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET INTEGRATED WITH SUPER BARRIER RECTIFIER...
- Publication number 20210351289
- Publication date Nov 11, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Shielded Gate Trench MOSFET Having Superjunction Structure
- Publication number 20210320202
- Publication date Oct 14, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET HAVING SUPER JUNCTION REGION FOR DC/AC...
- Publication number 20210296488
- Publication date Sep 23, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...
- Publication number 20210265498
- Publication date Aug 26, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...
- Publication number 20210202471
- Publication date Jul 1, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH INTEGRATED ESD PROTECTION DIODE HAVING ANODE ELECTRODE...
- Publication number 20210202470
- Publication date Jul 1, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION OF MULTIPLE STEPPED OXIDE SHIELDED GATE TRENCH MOSFET
- Publication number 20210126124
- Publication date Apr 29, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET INTEGRATED WITH SUPER BARRIER RECTIFIER
- Publication number 20210119030
- Publication date Apr 22, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...
- Publication number 20210104510
- Publication date Apr 8, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS HAVING DUMMY CELLS FOR AVALANCHE CAPABILITY IMPROVEMENT
- Publication number 20210104624
- Publication date Apr 8, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS WITH OXIDE CHARGE BALANCE REGION IN ACTIVE AREA AND...
- Publication number 20210028305
- Publication date Jan 28, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS

Nami MOS CO., LTD.

Organization

Patents Grantslast 30 patents

SiC trench MOSFET with low on-resistance and switching loss

Trench MOSFETs integrated with clamped diodes having trench field p...

Shielded gate trench MOSFET with ESD diode manufactured using two p...

SiC super junction trench MOSFET

Shielded gate trench MOSFET having improved specific on-resistance...

Shielded gate trench MOSFET integrated with super barrier rectifier...

Trench MOSFETs integrated with clamped diodes having trench field p...

Shielded gate trench MOSFET integrated with super barrier rectifier

Shielded gate trench MOSFET with ESD diode manufactured using two p...

Trench MOSFETs having dummy cells for avalanche capability improvement

Shielded gate trench MOSFETs with floating trenched gates and chann...

Patents Applicationslast 30 patents

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE

SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS

Semiconductor Device with Pillar- Shaped Shielded gate structures

SHIELDED GATE TRENCH MOSFETS WITH HEXAGONAL DEEP TRENCH LAYOUTS AND...

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TERMINATION STRUCTURES

SUPERFUNCTION MOSFETS HAVING SHIELDED GATE TRENCH STRUCTURES

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND...

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED PERFORMANCE STRUCTURES

SHIELDED GATE TRENCH MOSFET WITH MULTIPLE STEPPED EPITAXIAL STRUCTURES

SIC SUPER JUNCTION TRENCH MOSFET

SIC TRENCH MOSFET WITH LOW ON-RESISTANCE AND SWITCHING LOSS

AN IMPROVED SHIELDED GATE TRENCH MOSFET WITH LOW ON-RESISTANCE

TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...

SHIELDED GATE TRENCH MOSFET HAVING IMPROVED SPECIFIC ON-RESISTANCE...

SIC SUPER JUNCTION TRENCH MOSFET

SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...

SHIELDED GATE TRENCH MOSFET HAVING SUPER JUNCTION SURROUNDING LOWER...

SHIELDED GATE TRENCH MOSFET INTEGRATED WITH SUPER BARRIER RECTIFIER...

Super Shielded Gate Trench MOSFET Having Superjunction Structure

SHIELDED GATE TRENCH MOSFET HAVING SUPER JUNCTION REGION FOR DC/AC...

TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...

SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...

MOSFET WITH INTEGRATED ESD PROTECTION DIODE HAVING ANODE ELECTRODE...

TERMINATION OF MULTIPLE STEPPED OXIDE SHIELDED GATE TRENCH MOSFET

SHIELDED GATE TRENCH MOSFET INTEGRATED WITH SUPER BARRIER RECTIFIER

SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO P...

TRENCH MOSFETS HAVING DUMMY CELLS FOR AVALANCHE CAPABILITY IMPROVEMENT

TRENCH MOSFETS WITH OXIDE CHARGE BALANCE REGION IN ACTIVE AREA AND...