NaMLab gGmbH

Organization

Dresden, DE

Organizations

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 12,094,964
- Issue date Sep 17, 2024
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 11,699,749
- Issue date Jul 11, 2023
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having multiple gate terminals
- Patent number 11,515,428
- Issue date Nov 29, 2022
- NaMLab gGmbH
- Maik Simon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including a floating gate electrode and a layer of ferroelec...
- Patent number 11,424,253
- Issue date Aug 23, 2022
- NaMLab gGmbH
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and logic cell and operation method
- Patent number 11,205,467
- Issue date Dec 21, 2021
- NaMLab gGmbH
- Stefan Slesazeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electrical storage device with negative capacitance
- Patent number 11,145,665
- Issue date Oct 12, 2021
- NaMLab gGmbH
- Michael Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with adjustable rectifying transfer characteristic
- Patent number 10,978,125
- Issue date Apr 13, 2021
- NaMLab gGmbH
- Halid Mulaosmanović
- G11 - INFORMATION STORAGE
Information Patent Grant
Artificial neuron based on ferroelectric circuit element
- Patent number 10,963,776
- Issue date Mar 30, 2021
- NaMLab gGmbH
- Halid Mulaosmanovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit including a ferroelectric memory cell and manufa...
- Patent number 10,872,905
- Issue date Dec 22, 2020
- NaMLab gGmbH
- Stefan Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory cell for an integrated circuit
- Patent number 10,600,808
- Issue date Mar 24, 2020
- NaMLab gGmbH
- Uwe Schröder
- G11 - INFORMATION STORAGE
Information Patent Grant
Polarization-based configurable logic gate
- Patent number 10,424,379
- Issue date Sep 24, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reconfigurable nanowire field effect transistor, a nanowire array a...
- Patent number 10,347,760
- Issue date Jul 9, 2019
- Technische Universitát Dresden
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Application of antiferroelectric like materials in non-volatile mem...
- Patent number 10,056,393
- Issue date Aug 21, 2018
- NaMLab gGmbH
- Uwe Schröder
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel ferroelectric memory cell for an integrated circuit
- Patent number 10,043,567
- Issue date Aug 7, 2018
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a device including a floating gate electrode and...
- Patent number 9,865,608
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Inc.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel ferroelectric memory cell for an integrated circuit
- Patent number 9,830,969
- Issue date Nov 28, 2017
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge storage ferroelectric memory hybrid and erase scheme
- Patent number 9,818,468
- Issue date Nov 14, 2017
- NaMLab gGmbH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge storage ferroelectric memory hybrid and erase scheme
- Patent number 9,558,804
- Issue date Jan 31, 2017
- NaMLab gGmbH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitors including amorphous dielectric layers and methods of for...
- Patent number 9,437,420
- Issue date Sep 6, 2016
- Samsung Electronics Co., Ltd.
- Kyu-Ho Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory cell for an integrated circuit
- Patent number 9,053,802
- Issue date Jun 9, 2015
- NaMLab gGmbH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Grant
Photodiode having a p-n junction with varying expansion of the spac...
- Patent number 8,946,617
- Issue date Feb 3, 2015
- NaMLab gGmbH
- Juergen Holz
- G01 - MEASURING TESTING
Information Patent Grant
Integrated circuit including a ferroelectric memory cell and method...
- Patent number 8,304,823
- Issue date Nov 6, 2012
- NaMLab gGmbH
- Tim Boescke
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SWITCHABLE NONVOLATILE PYROELECTRIC DEVICE
- Publication number 20240260472
- Publication date Aug 1, 2024
- NaMLab gGmbH
- Patrick Dominic Lomenzo
Information Patent Application
Heterostructure of an Electronic Circuit Having a Semiconductor Device
- Publication number 20230327012
- Publication date Oct 12, 2023
- NaMLab gGmbH
- Stefan SCHMULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING MULTIPLE GATE TERMINALS
- Publication number 20210202752
- Publication date Jul 1, 2021
- NaMLab gGmbH
- Maik Simon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY AND LOGIC CELL AND OPERATION METHOD
- Publication number 20200357453
- Publication date Nov 12, 2020
- NaMLab gGmbH
- Stefan Slesazeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Electrical Storage Device with Negative Capacitance
- Publication number 20200350324
- Publication date Nov 5, 2020
- NaMLab gGmbH
- Michael HOFFMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL NEURON BASED ON FERROELECTRIC CIRCUIT ELEMENT
- Publication number 20200065647
- Publication date Feb 27, 2020
- NaMLab gGmbH
- Halid MULAOSMANOVIC
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Heterostructure of an Electronic Circuit Having a Semiconductor Device
- Publication number 20200020790
- Publication date Jan 16, 2020
- NaMLab gGmbH
- Stefan SCHMULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION-BASED CONFIGURABLE LOGIC GATE
- Publication number 20190172539
- Publication date Jun 6, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric Memory Cell for an Integrated Circuit
- Publication number 20190074295
- Publication date Mar 7, 2019
- NaMLab gGmbH
- Uwe SCHRÖDER
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Circuit Including a Ferroelectric Memory Cell and Manufa...
- Publication number 20180166453
- Publication date Jun 14, 2018
- NaMLab gGmbH
- Stefan MÜLLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...
- Publication number 20180151577
- Publication date May 31, 2018
- Fraunhofer-Gesellschaft zur Foerderung der angewan dten Forschung e.V.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilevel Ferroelectric Memory Cell for an Integrated Circuit
- Publication number 20180082729
- Publication date Mar 22, 2018
- NaMLab gGmbH
- Stefan SLESAZECK
- G11 - INFORMATION STORAGE
Information Patent Application
RECONFIGURABLE NANOWIRE FIELD EFFECT TRANSISTOR, A NANOWIRE ARRAY A...
- Publication number 20180012996
- Publication date Jan 11, 2018
- Technische Universitat Dresden
- Tim BALDAUF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Application of Antiferroelectric Like Materials in Non-Volatile Mem...
- Publication number 20170256552
- Publication date Sep 7, 2017
- NaMLab gGmbH
- Uwe SCHRÖDER
- G11 - INFORMATION STORAGE
Information Patent Application
Multilevel Ferroelectric Memory Cell for an Integrated Circuit
- Publication number 20170162250
- Publication date Jun 8, 2017
- NaMLab gGmbH
- Stefan SLESAZECK
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE STORAGE FERROELECTRIC MEMORY HYBRID AND ERASE SCHEME
- Publication number 20170076775
- Publication date Mar 16, 2017
- NaMLab gGmbH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING A DEVICE INCLUDING A FLOATING GATE ELECTRODE AND...
- Publication number 20160268271
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...
- Publication number 20160064510
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE FERROELECTRIC MEMORY HYBRID AND ERASE SCHEME
- Publication number 20160027490
- Publication date Jan 28, 2016
- NaMLab gGmbH
- Stefan Ferdinand Müller
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FOR...
- Publication number 20150357399
- Publication date Dec 10, 2015
- Samsung Electronics Co., Ltd.
- Kyu-Ho Cho
- H01 - BASIC ELECTRIC ELEMENTS

NaMLab gGmbH

Organization

Patents Grantslast 30 patents

Heterostructure of an electronic circuit having a semiconductor device

Heterostructure of an electronic circuit having a semiconductor device

Semiconductor device structure having multiple gate terminals

Device including a floating gate electrode and a layer of ferroelec...

Ferroelectric memory and logic cell and operation method

Electrical storage device with negative capacitance

Transistor with adjustable rectifying transfer characteristic

Artificial neuron based on ferroelectric circuit element

Integrated circuit including a ferroelectric memory cell and manufa...

Ferroelectric memory cell for an integrated circuit

Polarization-based configurable logic gate

Reconfigurable nanowire field effect transistor, a nanowire array a...

Application of antiferroelectric like materials in non-volatile mem...

Multilevel ferroelectric memory cell for an integrated circuit

Method of forming a device including a floating gate electrode and...

Multilevel ferroelectric memory cell for an integrated circuit

Charge storage ferroelectric memory hybrid and erase scheme

Charge storage ferroelectric memory hybrid and erase scheme

Capacitors including amorphous dielectric layers and methods of for...

Ferroelectric memory cell for an integrated circuit

Photodiode having a p-n junction with varying expansion of the spac...

Integrated circuit including a ferroelectric memory cell and method...

Patents Applicationslast 30 patents

SWITCHABLE NONVOLATILE PYROELECTRIC DEVICE

Heterostructure of an Electronic Circuit Having a Semiconductor Device

SEMICONDUCTOR DEVICE STRUCTURE HAVING MULTIPLE GATE TERMINALS

FERROELECTRIC MEMORY AND LOGIC CELL AND OPERATION METHOD

Electrical Storage Device with Negative Capacitance

ARTIFICIAL NEURON BASED ON FERROELECTRIC CIRCUIT ELEMENT

Heterostructure of an Electronic Circuit Having a Semiconductor Device

POLARIZATION-BASED CONFIGURABLE LOGIC GATE

Ferroelectric Memory Cell for an Integrated Circuit

Integrated Circuit Including a Ferroelectric Memory Cell and Manufa...

DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...

Multilevel Ferroelectric Memory Cell for an Integrated Circuit

RECONFIGURABLE NANOWIRE FIELD EFFECT TRANSISTOR, A NANOWIRE ARRAY A...

Application of Antiferroelectric Like Materials in Non-Volatile Mem...

Multilevel Ferroelectric Memory Cell for an Integrated Circuit

CHARGE STORAGE FERROELECTRIC MEMORY HYBRID AND ERASE SCHEME

METHOD OF FORMING A DEVICE INCLUDING A FLOATING GATE ELECTRODE AND...

DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...

CHARGE STORAGE FERROELECTRIC MEMORY HYBRID AND ERASE SCHEME

CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FOR...

Trademarklast 30 trademarks