National Institute of Advanced Industrial Science and Technology Laboratory for Advanced Optical Technology

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Ibaraki, JP

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Compound semiconductor formed from a heated portion of a layered st...
- Patent number 7,479,656
- Issue date Jan 20, 2009
- Samsung Japan Corporation
- Joo-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
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Method of manufacturing a compound semiconductor by heating a layer...
- Patent number 6,893,894
- Issue date May 17, 2005
- Samsung Japan Corporation
- Joo-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS

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