National Instituteof Advanced Industrial Science and Technology

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  • Tokyo, JP

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  • Information Patent Application

    SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR

    • Publication number 20140008666
    • Publication date Jan 9, 2014
    • National Instituteof Advanced Industrial Science and Technology
    • Yuichi Harada
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD

    • Publication number 20110001166
    • Publication date Jan 6, 2011
    • National Instituteof Advanced Industrial Science and Technology
    • Mutsuo Ogura
    • Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

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