Nishizawa; Junichi

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Patents Grantslast 30 patents

Information Patent Grant
Growth of doped semiconductor monolayers
- Patent number 5,693,139
- Issue date Dec 2, 1997
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing GaAs single crystals
- Patent number 5,542,373
- Issue date Aug 6, 1996
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for epitaxially growing chemical compound c...
- Patent number 5,463,977
- Issue date Nov 7, 1995
- Research Development Corporation
- Nobuaki Manada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal growth method
- Patent number 5,443,033
- Issue date Aug 22, 1995
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for forming a thin film of silicon
- Patent number 5,294,286
- Issue date Mar 15, 1994
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of epitaxially growing semiconductor crystal using light as...
- Patent number 5,254,207
- Issue date Oct 19, 1993
- Research Development Corporation of Japan
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystal thin films of element semiconductor
- Patent number 5,246,536
- Issue date Sep 21, 1993
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for growing compound semiconductor monocrystal
- Patent number 5,074,954
- Issue date Dec 24, 1991
- Research Development Corporation
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for growing compound semiconductor monocrystal
- Patent number 5,035,767
- Issue date Jul 30, 1991
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Holder with semiconductor lighting device
- Patent number 4,964,023
- Issue date Oct 16, 1990
- Nishizawa; Junichi
- Junichi Nishizawa
- E05 - LOCKS KEYS WINDOW OR DOOR FITTINGS SAFES
Information Patent Grant
Tunnel injection type static transistor and its integrated circuit
- Patent number 4,870,469
- Issue date Sep 26, 1989
- Research Development Corp.
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Holder with semiconductor lighting device
- Patent number 4,831,504
- Issue date May 16, 1989
- Nishizawa; Junichi
- Junichi Nishizawa
- E05 - LOCKS KEYS WINDOW OR DOOR FITTINGS SAFES
Information Patent Grant
Use of infrared radiation and an ellipsoidal reflection mirror
- Patent number 4,806,321
- Issue date Feb 21, 1989
- Research Development Corporation of Japan
- Junichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Color image sensor
- Patent number 4,791,396
- Issue date Dec 13, 1988
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor imaging device
- Patent number 4,725,873
- Issue date Feb 16, 1988
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor imaging device
- Patent number 4,719,499
- Issue date Jan 12, 1988
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction gate ballistic JFET with channel thinner than Debye...
- Patent number 4,712,122
- Issue date Dec 8, 1987
- Research Development Corp.
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static induction transistor photodetector having a deep shielding g...
- Patent number 4,684,966
- Issue date Aug 4, 1987
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET imager having light sensing inversion layer induced by insulat...
- Patent number 4,684,968
- Issue date Aug 4, 1987
- Olympus Optical Co., Ltd.
- Yoshinori Ohta
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor imaging device utilizing static induction transistors
- Patent number 4,651,015
- Issue date Mar 17, 1987
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor photoelectric transducer
- Patent number 4,651,180
- Issue date Mar 17, 1987
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state image pickup device
- Patent number 4,626,916
- Issue date Dec 2, 1986
- Olympus Optical Co., Ltd.
- Toyokazu Mizoguchi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor photodetector
- Patent number 4,623,909
- Issue date Nov 18, 1986
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-dimensional semiconductor imaging device
- Patent number 4,574,310
- Issue date Mar 4, 1986
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor image sensor
- Patent number 4,562,474
- Issue date Dec 31, 1985
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for fabricating semiconductor photodetector
- Patent number 4,536,946
- Issue date Aug 27, 1985
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state image pickup device
- Patent number 4,531,156
- Issue date Jul 23, 1985
- Olympus Optical Company Limited
- Jun-ichi Nishizawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for fabricating semiconductor photodetector
- Patent number 4,502,203
- Issue date Mar 5, 1985
- Nishizawa; Junichi
- Junichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing pn junction in group II-VI compound semicon...
- Patent number 4,389,256
- Issue date Jun 21, 1983
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH

Nishizawa; Junichi

Organization

Patents Grantslast 30 patents

Growth of doped semiconductor monolayers

Method of manufacturing GaAs single crystals

Method of and apparatus for epitaxially growing chemical compound c...

Semiconductor crystal growth method

Process for forming a thin film of silicon

Method of epitaxially growing semiconductor crystal using light as...

Method for growing single crystal thin films of element semiconductor

Process and apparatus for growing compound semiconductor monocrystal

Process for growing compound semiconductor monocrystal

Holder with semiconductor lighting device

Tunnel injection type static transistor and its integrated circuit

Holder with semiconductor lighting device

Use of infrared radiation and an ellipsoidal reflection mirror

Color image sensor

Semiconductor imaging device

Semiconductor imaging device

Heterojunction gate ballistic JFET with channel thinner than Debye...

Static induction transistor photodetector having a deep shielding g...

JFET imager having light sensing inversion layer induced by insulat...

Semiconductor imaging device utilizing static induction transistors

Semiconductor photoelectric transducer

Solid state image pickup device

Semiconductor photodetector

One-dimensional semiconductor imaging device

Semiconductor image sensor

Method for fabricating semiconductor photodetector

Solid state image pickup device

Method for fabricating semiconductor photodetector

Method of manufacturing pn junction in group II-VI compound semicon...