NORSTEL AB

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LINKOPING, SE

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Patents Grantslast 30 patents

Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,803,160
- Issue date Aug 12, 2014
- SiCED Electronics Development GmbH & Co. KG
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Homoepitaxial growth of SiC on low off-axis SiC wafers
- Patent number 8,492,772
- Issue date Jul 23, 2013
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,097,524
- Issue date Jan 17, 2012
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Homoepitaxial growth of SiC on low off-axis SiC wafers
- Patent number 7,531,433
- Issue date May 12, 2009
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 7,482,068
- Issue date Jan 27, 2009
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for producing single crystals by vapor deposition
- Patent number 7,361,222
- Issue date Apr 22, 2008
- Norstel AB
- Erik Janzén
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High resistivity silicon carbide single crystal
- Patent number 7,018,597
- Issue date Mar 28, 2006
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20120091471
- Publication date Apr 19, 2012
- SiCED Electronics Development GmbH
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS
- Publication number 20090230406
- Publication date Sep 17, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20090114924
- Publication date May 7, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
Device and method to producing single crystals by vapour deposition
- Publication number 20080149020
- Publication date Jun 26, 2008
- NORSTEL AB
- Erik Janzen
- C30 - CRYSTAL GROWTH
Information Patent Application
Homoepitaxial growth of SiC on low off-axis SiC wafers
- Publication number 20060011128
- Publication date Jan 19, 2006
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH

Organization

Patents Grantslast 30 patents

Lightly doped silicon carbide wafer and use thereof in high power d...

Homoepitaxial growth of SiC on low off-axis SiC wafers

Lightly doped silicon carbide wafer and use thereof in high power d...

Homoepitaxial growth of SiC on low off-axis SiC wafers

Lightly doped silicon carbide wafer and use thereof in high power d...

Device and method for producing single crystals by vapor deposition

High resistivity silicon carbide single crystal

Patents Applicationslast 30 patents

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

Device and method to producing single crystals by vapour deposition

Homoepitaxial growth of SiC on low off-axis SiC wafers

Trademarklast 30 trademarks