NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

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Dual-metal gate CMOS devices and method for manufacturing the same
- Patent number 9,384,986
- Issue date Jul 5, 2016
- NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

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