PFC DEVICE CORP.

Organization

New Taipei City, TW

Organizations

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
MOS P-N junction Schottky diode device and method for manufacturing...
- Patent number 9,064,904
- Issue date Jun 23, 2015
- PFC Device Corp.
- Hung-Hsin Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation MOS P-N junction diode device and method for manuf...
- Patent number 9,029,235
- Issue date May 12, 2015
- PFC Device Corp.
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing rectifier with vertical MOS structure
- Patent number 8,993,427
- Issue date Mar 31, 2015
- PFC Device Corp.
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky diode and method for manufacturing the same
- Patent number 8,927,401
- Issue date Jan 6, 2015
- PFC Device Corp.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS P-N junction diode with enhanced response speed and manufacturi...
- Patent number 8,921,949
- Issue date Dec 30, 2014
- PFC Device Corp.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky rectifier device and method for manufacturing the same
- Patent number 8,890,279
- Issue date Nov 18, 2014
- PFC Device Corp.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifier with vertical MOS structure
- Patent number 8,853,748
- Issue date Oct 7, 2014
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide trench termination structure for semiconductor device
- Patent number 8,809,946
- Issue date Aug 19, 2014
- PFC Device Corp.
- Hung-Hsin Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS P-N junction schottky diode device and method for manufacturing...
- Patent number 8,796,808
- Issue date Aug 5, 2014
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of multi-trench termination structure for semi...
- Patent number 8,753,963
- Issue date Jun 17, 2014
- PFC Device Corp.
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation MOS P-N junction diode device and method for manuf...
- Patent number 8,735,228
- Issue date May 27, 2014
- PFC Device Corp.
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS P-N junction diode device and method for manufacturing the same
- Patent number 8,728,878
- Issue date May 20, 2014
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS diode with termination structure and method for manufacturing t...
- Patent number 8,704,298
- Issue date Apr 22, 2014
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-trench termination structure for semiconductor device
- Patent number 8,680,590
- Issue date Mar 25, 2014
- PFC Device Corp.
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectifier with vertical MOS structure
- Patent number 8,664,701
- Issue date Mar 4, 2014
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky rectifier device and method for manufacturing the same
- Patent number 8,618,626
- Issue date Dec 31, 2013
- PFC Device Corporation
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation MOS P-N junction diode device and method for manuf...
- Patent number 8,558,315
- Issue date Oct 15, 2013
- PFC Device Corporation
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench schottky diode and method for manufacturing the same
- Patent number 8,405,184
- Issue date Mar 26, 2013
- PFC Device Corporation
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS P-N junction diode device and method for manufacturing the same
- Patent number 8,390,081
- Issue date Mar 5, 2013
- PFC Device Corp.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURI...
- Publication number 20150084136
- Publication date Mar 26, 2015
- PFC DEVICE CORP.
- Hung-Hsin Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150054115
- Publication date Feb 26, 2015
- PFC DEVICE CORP.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING RECTIFIER WITH VERTICAL MOS STRUCTURE
- Publication number 20150050791
- Publication date Feb 19, 2015
- PFC DEVICE CORP.
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...
- Publication number 20140308799
- Publication date Oct 16, 2014
- PFC DEVICE CORP.
- Mei-Ling CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTIFIER WITH VERTICAL MOS STRUCTURE
- Publication number 20140131793
- Publication date May 15, 2014
- PFC DEVICE CORP.
- Kuo-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140077328
- Publication date Mar 20, 2014
- PFC DEVICE CORP.
- Kou-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF MULTI-TRENCH TERMINATION STRUCTURE FOR SEMI...
- Publication number 20140030882
- Publication date Jan 30, 2014
- PFC DEVICE CORP.
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...
- Publication number 20140004681
- Publication date Jan 2, 2014
- PFC DEVICE CORP.
- Mei-Ling CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20130249043
- Publication date Sep 26, 2013
- PFC DEVICE CORP.
- Hung-Hsin KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE AND MAN...
- Publication number 20130228891
- Publication date Sep 5, 2013
- PFC DEVICE CORP.
- Lung-Ching Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURI...
- Publication number 20130168779
- Publication date Jul 4, 2013
- PFC DEVICE CORP.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130130459
- Publication date May 23, 2013
- PFC DEVICE CORP.
- Kuo-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130122695
- Publication date May 16, 2013
- PFC DEVICE CORP.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTIFIER WITH VERTICAL MOS STRUCTURE
- Publication number 20120261751
- Publication date Oct 18, 2012
- PFC DEVICE CORP.
- Kou-Liang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...
- Publication number 20120049287
- Publication date Mar 1, 2012
- PFC DEVICE CORPORATION
- Mei-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110084353
- Publication date Apr 14, 2011
- PFC DEVICE CORPORATION
- Kou-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100327288
- Publication date Dec 30, 2010
- PFC DEVICE CORPORATION
- Kou-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS P-N JUNCTION SCHOTTKY DIODE DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20090261428
- Publication date Oct 22, 2009
- PFC DEVICE CO.
- Kuo-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20090261427
- Publication date Oct 22, 2009
- PFC DEVICE CO.
- Kuo-Liang CHAO
- H01 - BASIC ELECTRIC ELEMENTS

PFC DEVICE CORP.

Organization

Patents Grantslast 30 patents

MOS P-N junction Schottky diode device and method for manufacturing...

Trench isolation MOS P-N junction diode device and method for manuf...

Method for manufacturing rectifier with vertical MOS structure

Trench Schottky diode and method for manufacturing the same

MOS P-N junction diode with enhanced response speed and manufacturi...

Trench Schottky rectifier device and method for manufacturing the same

Rectifier with vertical MOS structure

Wide trench termination structure for semiconductor device

MOS P-N junction schottky diode device and method for manufacturing...

Manufacturing method of multi-trench termination structure for semi...

Trench isolation MOS P-N junction diode device and method for manuf...

MOS P-N junction diode device and method for manufacturing the same

MOS diode with termination structure and method for manufacturing t...

Multi-trench termination structure for semiconductor device

Rectifier with vertical MOS structure

Trench Schottky rectifier device and method for manufacturing the same

Trench isolation MOS P-N junction diode device and method for manuf...

Trench schottky diode and method for manufacturing the same

MOS P-N junction diode device and method for manufacturing the same

Patents Applicationslast 30 patents

MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURI...

TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING RECTIFIER WITH VERTICAL MOS STRUCTURE

TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...

RECTIFIER WITH VERTICAL MOS STRUCTURE

TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME

MANUFACTURING METHOD OF MULTI-TRENCH TERMINATION STRUCTURE FOR SEMI...

TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...

WIDE TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE

MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE AND MAN...

MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURI...

MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME

RECTIFIER WITH VERTICAL MOS STRUCTURE

TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUF...

TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME

MOS P-N JUNCTION SCHOTTKY DIODE DEVICE AND METHOD FOR MANUFACTURING...

MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME

Trademarklast 30 trademarks