PN Junction Semiconductor (Hangzhou) Co., Ltd.

Follow

Organization

Hangzhou, CN

Organizations

Please log in for detailed analytics

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL ST...
- Publication number 20230178636
- Publication date Jun 8, 2023
- PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Xing Huang
- H01 - BASIC ELECTRIC ELEMENTS