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Osaka, JP
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Patent Grant
Method for forming a doped ZnSe single crystal
Patent number
5,169,799
Issue date
Dec 8, 1992
Sumitomo Electric Industries, Ltd.
Tsunemasa Taguchi
C30 - CRYSTAL GROWTH
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Patent Grant
Method for producing semiconductive single crystal
Patent number
4,983,249
Issue date
Jan 8, 1991
Production Engineering Association
Tsunemasa Taguchi
C30 - CRYSTAL GROWTH
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