SCIOCS COMPANY LIMITED

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor structure, inspection method...
- Patent number 11,473,907
- Issue date Oct 18, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure manufacturing method and intermediate structure
- Patent number 11,393,693
- Issue date Jul 19, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 11,377,756
- Issue date Jul 5, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Structure and intermediate structure
- Patent number 11,380,765
- Issue date Jul 5, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure manufacturing method, structure manufacturing apparatus a...
- Patent number 11,342,191
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal
- Patent number 11,339,053
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Structure manufacturing method and manufacturing device, and light...
- Patent number 11,342,220
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal substrate, semiconductor laminate, method of manufa...
- Patent number 11,339,500
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure manufacturing method including surface photoelectrochemic...
- Patent number 11,289,322
- Issue date Mar 29, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Hirikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,094,539
- Issue date Aug 17, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,075,077
- Issue date Jul 27, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal
- Patent number 11,008,671
- Issue date May 18, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride laminated substrate and semiconductor device
- Patent number 10,998,188
- Issue date May 4, 2021
- HOSEI UNIVERSITY
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating crystal, N-type semiconductor crystal and P-type se...
- Patent number 10,978,294
- Issue date Apr 13, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, semiconductor laminate, laminated...
- Patent number 10,978,296
- Issue date Apr 13, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN laminate and method of manufacturing the same
- Patent number 10,903,074
- Issue date Jan 26, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor device, and method f...
- Patent number 10,818,757
- Issue date Oct 27, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,797,181
- Issue date Oct 6, 2020
- HOSEI UNIVERSITY
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor device, and method f...
- Patent number 10,770,554
- Issue date Sep 8, 2020
- SCIOCS COMPANY LIMITED
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN laminate and method of manufacturing the same
- Patent number 10,707,309
- Issue date Jul 7, 2020
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride crystal substrate and nitride crys...
- Patent number 10,683,587
- Issue date Jun 16, 2020
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 10,685,841
- Issue date Jun 16, 2020
- HOSEI UNIVERSITY
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN material and method of manufacturing semiconductor device
- Patent number 10,665,683
- Issue date May 26, 2020
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal substrate
- Patent number 10,584,031
- Issue date Mar 10, 2020
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group 13 nitride crystal and group 13 nitr...
- Patent number 10,538,858
- Issue date Jan 21, 2020
- SCIOCS COMPANY LIMITED
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 10,483,350
- Issue date Nov 19, 2019
- HOSEI UNIVERSITY
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for crystal growth having a plurality of group III nitrid...
- Patent number 10,364,510
- Issue date Jul 30, 2019
- Sciocs Company Limited
- Tekehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing crystal substrate
- Patent number 10,325,793
- Issue date Jun 18, 2019
- SCIOCS COMPANY LIMITED
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing group-III nitride substrate and group-III...
- Patent number 10,290,489
- Issue date May 14, 2019
- Sciocs Company Limited
- Toshio Kitamura
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for manufacturing nitride crystal substrate and substrate fo...
- Patent number 10,260,165
- Issue date Apr 16, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION APPARATUS FOR PRODUCING STRUCTURAL BODY AND PRODUCTION M...
- Publication number 20230099777
- Publication date Mar 30, 2023
- SCIOCS Company Limited
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING STRUCTURE
- Publication number 20220384614
- Publication date Dec 1, 2022
- SCIOCS COMPANY LIMITED
- Osamu ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING STRUCTURE
- Publication number 20220325431
- Publication date Oct 13, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE
- Publication number 20220285525
- Publication date Sep 8, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING STRUCTURE
- Publication number 20220270887
- Publication date Aug 25, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURI...
- Publication number 20220259765
- Publication date Aug 18, 2022
- SCIOCS Company Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE MANUFACTURING METHOD AND MANUFACTURING DEVICE, AND LIGHT...
- Publication number 20220246467
- Publication date Aug 4, 2022
- SCIOCS Company Limited
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE PRODUCTION METHOD AND STRUCTURE PRODUCTION APPARATUS
- Publication number 20220172943
- Publication date Jun 2, 2022
- SCIOCS Company Limited
- Fumimasa HIRIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220154367
- Publication date May 19, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, LAMINATED STRUCTURE, AND METHOD FO...
- Publication number 20220106706
- Publication date Apr 7, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...
- Publication number 20220074071
- Publication date Mar 10, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL SUBSTRATE
- Publication number 20220045177
- Publication date Feb 10, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE-BASED HIGH ELECTRON MOBILITY TRANS...
- Publication number 20220037517
- Publication date Feb 3, 2022
- SCIOCS Company Limited
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING STRUCTURE, AND LIGHT IRRADIATION...
- Publication number 20220028737
- Publication date Jan 27, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE LAMINATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR P...
- Publication number 20220028981
- Publication date Jan 27, 2022
- SCIOCS Company Limited
- Hajime FUJIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20220005691
- Publication date Jan 6, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED...
- Publication number 20210391427
- Publication date Dec 16, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20210355601
- Publication date Nov 18, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE MANUFACTURING METHOD AND STRUCTURE MANUFACTURING DEVICE
- Publication number 20210351030
- Publication date Nov 11, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HIRIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING NITRIDE S...
- Publication number 20210317597
- Publication date Oct 14, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE MANUFACTURING METHOD, STRUCTURE MANUFACTURING APPARATUS A...
- Publication number 20210313186
- Publication date Oct 7, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20210292931
- Publication date Sep 23, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, NITRIDE SE...
- Publication number 20210215621
- Publication date Jul 15, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITT...
- Publication number 20210217927
- Publication date Jul 15, 2021
- SCIOCS Company Limited
- Hajime FUJIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...
- Publication number 20210210602
- Publication date Jul 8, 2021
- SCIOCS COMPANY LIMITED
- Takeshi MEGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR ELEMENT
- Publication number 20210184080
- Publication date Jun 17, 2021
- SCIOCS Company Limited
- Hajime FUJIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, PROGRAM FO...
- Publication number 20210184003
- Publication date Jun 17, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE, NITRIDE SEMICONDUCTOR LI...
- Publication number 20210151625
- Publication date May 20, 2021
- SCIOCS Company Limited
- Taichiro KONNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, INSPECTION METHOD...
- Publication number 20210131800
- Publication date May 6, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE LAMINATE
- Publication number 20210005717
- Publication date Jan 7, 2021
- SCIOCS Company Limited
- Ryota ISONO
- H01 - BASIC ELECTRIC ELEMENTS

SCIOCS COMPANY LIMITED

Organization

Patents Grantslast 30 patents

Method for manufacturing semiconductor structure, inspection method...

Structure manufacturing method and intermediate structure

Nitride crystal substrate and method for manufacturing the same

Structure and intermediate structure

Structure manufacturing method, structure manufacturing apparatus a...

Nitride crystal

Structure manufacturing method and manufacturing device, and light...

Nitride crystal substrate, semiconductor laminate, method of manufa...

Structure manufacturing method including surface photoelectrochemic...

Method for manufacturing nitride semiconductor substrate and nitrid...

Nitride semiconductor template and nitride semiconductor device

Nitride crystal

Gallium nitride laminated substrate and semiconductor device

Semi-insulating crystal, N-type semiconductor crystal and P-type se...

Nitride semiconductor substrate, semiconductor laminate, laminated...

GaN laminate and method of manufacturing the same

Nitride semiconductor substrate, semiconductor device, and method f...

Semiconductor device and method for manufacturing the same

Nitride semiconductor substrate, semiconductor device, and method f...

GaN laminate and method of manufacturing the same

Method for manufacturing nitride crystal substrate and nitride crys...

Semiconductor device

GaN material and method of manufacturing semiconductor device

Nitride crystal substrate

Method for manufacturing group 13 nitride crystal and group 13 nitr...

Semiconductor device

Substrate for crystal growth having a plurality of group III nitrid...

Method for producing crystal substrate

Method for manufacturing group-III nitride substrate and group-III...

Method for manufacturing nitride crystal substrate and substrate fo...

Patents Applicationslast 30 patents

PRODUCTION APPARATUS FOR PRODUCING STRUCTURAL BODY AND PRODUCTION M...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING STRUCTURE

METHOD AND DEVICE FOR MANUFACTURING STRUCTURE

METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE

METHOD FOR MANUFACTURING STRUCTURE

NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURI...

STRUCTURE MANUFACTURING METHOD AND MANUFACTURING DEVICE, AND LIGHT...

STRUCTURE PRODUCTION METHOD AND STRUCTURE PRODUCTION APPARATUS

NITRIDE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR SUBSTRATE, LAMINATED STRUCTURE, AND METHOD FO...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...

EPITAXIAL SUBSTRATE

METHOD FOR MANUFACTURING NITRIDE-BASED HIGH ELECTRON MOBILITY TRANS...

METHOD AND APPARATUS FOR PRODUCING STRUCTURE, AND LIGHT IRRADIATION...

GROUP III NITRIDE LAMINATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR P...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

STRUCTURE MANUFACTURING METHOD AND STRUCTURE MANUFACTURING DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING NITRIDE S...

STRUCTURE MANUFACTURING METHOD, STRUCTURE MANUFACTURING APPARATUS A...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, NITRIDE SE...

GROUP-III NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITT...

SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...

GROUP-III NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR ELEMENT

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, PROGRAM FO...

NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE, NITRIDE SEMICONDUCTOR LI...

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, INSPECTION METHOD...

GROUP-III NITRIDE LAMINATE

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