Shusaku Kabushiki Kaiksha

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Osaka, JP

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Cruicible and growth method for polycrystal silicon using same
- Patent number 6,743,293
- Issue date Jun 1, 2004
- Shusaku Kabushiki Kaiksha
- Nobuyuki Katoh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

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