SILICON SEMICONDUCTOR CORPORATION

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RALEIGH, NC, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods of forming power semiconductor devices having laterally ext...
- Patent number 7,041,559
- Issue date May 9, 2006
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit power devices having junction barrier controlled...
- Patent number 6,800,897
- Issue date Oct 5, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having laterally extending base shieldi...
- Patent number 6,791,143
- Issue date Sep 14, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having retrograded-doped transition regions...
- Patent number 6,784,486
- Issue date Aug 31, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having retrograded-doped transition regions...
- Patent number 6,781,194
- Issue date Aug 24, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming vertical mosfets having trench-based gate electr...
- Patent number 6,764,889
- Issue date Jul 20, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) power devices having faraday shield layers the...
- Patent number 6,653,691
- Issue date Nov 25, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having trench-based electrodes therein
- Patent number 6,649,975
- Issue date Nov 18, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFETs having trench-based gate electrodes within deeper...
- Patent number 6,621,121
- Issue date Sep 16, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged power devices having vertical power mosfets therein that a...
- Patent number 6,586,833
- Issue date Jul 1, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS

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Trademarklast 30 trademarks

Information Trademark
78339605 - SILICON SEMICONDUCTOR
- Serial number 78339605
- Registration number 2911132
- Filing date Dec 11, 2003
- Silicon Semiconductor Corporation
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

SILICON SEMICONDUCTOR CORPORATION

Organization

Patents Grantslast 30 patents

Methods of forming power semiconductor devices having laterally ext...

Integrated circuit power devices having junction barrier controlled...

Power semiconductor devices having laterally extending base shieldi...

Vertical power devices having retrograded-doped transition regions...

Vertical power devices having retrograded-doped transition regions...

Methods of forming vertical mosfets having trench-based gate electr...

Radio frequency (RF) power devices having faraday shield layers the...

Vertical power devices having trench-based electrodes therein

Vertical MOSFETs having trench-based gate electrodes within deeper...

Packaged power devices having vertical power mosfets therein that a...

Trademarklast 30 trademarks

78339605 - SILICON SEMICONDUCTOR