T3MEMORY, INC.

Organization

Saratoga, CA, US

Organizations

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Patents Grantslast 30 patents

Information Patent Grant
Method of making a spin-transfer-torque magnetoresistive random acc...
- Patent number 9,741,929
- Issue date Aug 22, 2017
- T3Memory, Inc.
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS

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Patents Applicationslast 30 patents

Information Patent Application
Method of Making a Spin-Transfer-Torque Magnetoresistive Random Acc...
- Publication number 20160336508
- Publication date Nov 17, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NOVEL RECORDING MULTILAYER
- Publication number 20160315250
- Publication date Oct 27, 2016
- T3Memory, Inc.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO MAKE MRAM WITH SMALL FOOTPRINT
- Publication number 20160293835
- Publication date Oct 6, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS
- Publication number 20160260890
- Publication date Sep 8, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME
- Publication number 20160225982
- Publication date Aug 4, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING MRAM WITH SMALL DIMENSION AND HIGH QULITY
- Publication number 20160211445
- Publication date Jul 21, 2016
- T3Memory, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN IMPROVED METHOD TO MAKE OF FABRICATING IC/MRAM USING OXYGEN ION...
- Publication number 20160172585
- Publication date Jun 16, 2016
- T3Memory, Inc.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD ASSISTED PERPENDICULAR STT-MRAM
- Publication number 20160163974
- Publication date Jun 9, 2016
- T3Memory, Inc.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE MRAM WITH SMALL CELL SIZE
- Publication number 20160072054
- Publication date Mar 10, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL STT-MRAM AND METHOD TO MAKE THE SAME
- Publication number 20160064652
- Publication date Mar 3, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE THREE-TERMINAL MRAM
- Publication number 20160064651
- Publication date Mar 3, 2016
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL SPIN TRANSISTOR MAGNETIC RANDOM ACCESS MEMORY AND TH...
- Publication number 20150364676
- Publication date Dec 17, 2015
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SMALL MRAM CELL BY COLLIMATED OXYGEN ION IMPLANTATION
- Publication number 20150340602
- Publication date Nov 26, 2015
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM MRAM BY DUAL ION IMPLANTATION
- Publication number 20150137286
- Publication date May 21, 2015
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE MRAM USING OXYGEN ION IMPLANTATION
- Publication number 20140339661
- Publication date Nov 20, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR STT-MRAM HAVING LOGICAL MAGNETIC SHIELDING
- Publication number 20140327096
- Publication date Nov 6, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES
- Publication number 20140328116
- Publication date Nov 6, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR STT-MRAM HAVING PERMEABLE DIELECTRIC LAYERS
- Publication number 20140319632
- Publication date Oct 30, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SPIN HALL EFFECT MAGNETIC-RAM
- Publication number 20140312441
- Publication date Oct 23, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO MAKE INTEGRATED DEVICE USING OXYGEN ION IMPLANTATION
- Publication number 20140306304
- Publication date Oct 16, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM HAVING NOVELSELF-REFERENCED READ METHOD
- Publication number 20140301135
- Publication date Oct 9, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL HYBRID METHOD OF PATTERNING MTJ STACK
- Publication number 20140299951
- Publication date Oct 9, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING MTJ STACK
- Publication number 20140295579
- Publication date Oct 2, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME
- Publication number 20140252439
- Publication date Sep 11, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20140254252
- Publication date Sep 11, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140246741
- Publication date Sep 4, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PROCESS FOR FABRICATING VOLTAGE-GATED MRAM
- Publication number 20140241047
- Publication date Aug 28, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STT-MRAM AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140217487
- Publication date Aug 7, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING MRAM MEMORY ELEMENTS
- Publication number 20140217527
- Publication date Aug 7, 2014
- T3MEMORY, INC.
- YIMIN GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS
- Publication number 20140217526
- Publication date Aug 7, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE

T3MEMORY, INC.

Organization

Patents Grantslast 30 patents

Method of making a spin-transfer-torque magnetoresistive random acc...

Patents Applicationslast 30 patents

Method of Making a Spin-Transfer-Torque Magnetoresistive Random Acc...

MAGNETORESISTIVE ELEMENT HAVING A NOVEL RECORDING MULTILAYER

METHOD TO MAKE MRAM WITH SMALL FOOTPRINT

NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS

MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME

METHOD FOR MAKING MRAM WITH SMALL DIMENSION AND HIGH QULITY

AN IMPROVED METHOD TO MAKE OF FABRICATING IC/MRAM USING OXYGEN ION...

ELECTRIC FIELD ASSISTED PERPENDICULAR STT-MRAM

METHOD TO MAKE MRAM WITH SMALL CELL SIZE

THREE-TERMINAL STT-MRAM AND METHOD TO MAKE THE SAME

METHOD TO MAKE THREE-TERMINAL MRAM

THREE-TERMINAL SPIN TRANSISTOR MAGNETIC RANDOM ACCESS MEMORY AND TH...

METHOD TO FORM SMALL MRAM CELL BY COLLIMATED OXYGEN ION IMPLANTATION

METHOD TO FORM MRAM BY DUAL ION IMPLANTATION

METHOD TO MAKE MRAM USING OXYGEN ION IMPLANTATION

PERPENDICULAR STT-MRAM HAVING LOGICAL MAGNETIC SHIELDING

MAGNETIC MEMORY DEVICES

PERPENDICULAR STT-MRAM HAVING PERMEABLE DIELECTRIC LAYERS

NOVEL SPIN HALL EFFECT MAGNETIC-RAM

METHOD TO MAKE INTEGRATED DEVICE USING OXYGEN ION IMPLANTATION

MRAM HAVING NOVELSELF-REFERENCED READ METHOD

NOVEL HYBRID METHOD OF PATTERNING MTJ STACK

METHOD OF PATTERNING MTJ STACK

MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME

SELF-ALIGNED PROCESS FOR FABRICATING VOLTAGE-GATED MRAM

STT-MRAM AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING MRAM MEMORY ELEMENTS

NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS