Taiwan Memory Company

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Hsinchu City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing flash memory cell
- Patent number 8,778,760
- Issue date Jul 15, 2014
- Taiwan Memory Company
- Yung-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried bit line process and scheme
- Patent number 8,748,961
- Issue date Jun 10, 2014
- Taiwan Memory Corporation
- Le-Tien Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing flash memory cell
- Patent number 8,664,062
- Issue date Mar 4, 2014
- Taiwan Memory Company
- Yung-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a buried circuit structure
- Patent number 8,431,485
- Issue date Apr 30, 2013
- Taiwan Memory Company
- Le-Tien Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a buried circuit structure
- Patent number 8,183,146
- Issue date May 22, 2012
- Taiwan Memory Company
- Tai-Sheng Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating crown-shaped capacitor
- Patent number 8,143,136
- Issue date Mar 27, 2012
- Taiwan Memory Corporation
- Chao-Hsi Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING FLASH MEMORY CELL
- Publication number 20140106526
- Publication date Apr 17, 2014
- Taiwan Memory Company
- Yung-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED BIT LINE PROCESS AND SCHEME
- Publication number 20110101435
- Publication date May 5, 2011
- TAIWAN MEMORY CORPORATION
- Le-Tien JUNG
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks