Taizhou Beyond Technology Co., Ltd.

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Taizhou City, Zhejiang, CN

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Patents Grantslast 30 patents

Information Patent Grant
Production process for silicon carbide
- Patent number 10,407,307
- Issue date Sep 10, 2019
- Taizhou Beyond Technology Co., Ltd.
- Masahiro Hoshino
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL

Patents Applicationslast 30 patents

Information Patent Application
Silicon Carbide Single Crystal Manufacturing Device
- Publication number 20190211472
- Publication date Jul 11, 2019
- Taizhou Beyond Technology Co., Ltd.
- Masahiro HOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
A Production Process for Silicon Carbide
- Publication number 20170081198
- Publication date Mar 23, 2017
- Taizhou Beyond Technology Co., Ltd.
- Masahiro Hoshino
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
A Wide Band Gap Semiconductor Device and Its Fabrication Process
- Publication number 20170084510
- Publication date Mar 23, 2017
- Taizhou Beyond Technology Co., Ltd.
- Masahiro Hoshino
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks