Technology and Devices International, Inc.

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Gaithersburg, MD, US

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Patents Grantslast 30 patents

Information Patent Grant
HVPE apparatus and methods for growth of indium containing material...
- Patent number 7,727,333
- Issue date Jun 1, 2010
- Technologies and Devices International, Inc.
- Alexander L. Syrkin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 7,670,435
- Issue date Mar 2, 2010
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,611,586
- Issue date Nov 3, 2009
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for fabricating crack-free Group III nitride s...
- Patent number 7,501,023
- Issue date Mar 10, 2009
- Technologies and Devices, International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,279,047
- Issue date Oct 9, 2007
- Technologies and Devices, International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bulk GaN and ALGaN single crystals
- Patent number 6,936,357
- Issue date Aug 30, 2005
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-b...
- Patent number 6,849,862
- Issue date Feb 1, 2005
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Apparatus for epitaxially growing semiconductor device structures w...
- Patent number 6,706,119
- Issue date Mar 16, 2004
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of epitaxially growing device structures with submicron grou...
- Patent number 6,660,083
- Issue date Dec 9, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 6,656,285
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of epitaxially growing submicron group III nitride layers ut...
- Patent number 6,656,272
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for achieving low defect density GaN single crystal boules
- Patent number 6,616,757
- Issue date Sep 9, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating bulk GaN single crystals
- Patent number 6,613,143
- Issue date Sep 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing III-V compound semiconductor structures with an...
- Patent number 6,599,133
- Issue date Jul 29, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of crystal growth and resulted structures
- Patent number 6,579,359
- Issue date Jun 17, 2003
- Technologies and Devices International, Inc.
- Marina Mynbaeva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating bulk AlGaN single crystals
- Patent number 6,576,054
- Issue date Jun 10, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of epitaxially growing device structures with sharp layer in...
- Patent number 6,573,164
- Issue date Jun 3, 2003
- Technologies and Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing GaN ingots
- Patent number 6,562,124
- Issue date May 13, 2003
- Technologies and Devices International, Inc.
- Vladimir Ivantzov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-n heterojunction-based structures utilizing HVPE grown III-V comp...
- Patent number 6,559,467
- Issue date May 6, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing p-n heterojunction-based structures utilizing HV...
- Patent number 6,559,038
- Issue date May 6, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing p-type III-V compound material utilizing HVPE te...
- Patent number 6,555,452
- Issue date Apr 29, 2003
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non...
- Patent number 6,479,839
- Issue date Nov 12, 2002
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
P-N homojunction-based structures utilizing HVPE growth III-V compo...
- Patent number 6,476,420
- Issue date Nov 5, 2002
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing p-n homojunction-based structures utilizing HVPE...
- Patent number 6,472,300
- Issue date Oct 29, 2002
- Technologies and Devices International, Inc.
- Audrey E. Nikolaev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing III-V nitride pn junctions and p-i-n junctions
- Patent number 6,218,269
- Issue date Apr 17, 2001
- Technology and Devices International, Inc.
- Andrey E. Nikolaev
- C30 - CRYSTAL GROWTH

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Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...
- Publication number 20090130781
- Publication date May 21, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...
- Publication number 20090092815
- Publication date Apr 9, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20080022926
- Publication date Jan 31, 2008
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free group III nitride s...
- Publication number 20060280668
- Publication date Dec 14, 2006
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AIGaN single crystals
- Publication number 20050244997
- Publication date Nov 3, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for achieving low defect density AlGaN single crystal boules
- Publication number 20050212001
- Publication date Sep 29, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20050164044
- Publication date Jul 28, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for fabricating crack-free Group III nitride s...
- Publication number 20050142391
- Publication date Jun 30, 2005
- Technologies & Devices International, Inc.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Reactor for extended duration growth of gallium containing single c...
- Publication number 20050056222
- Publication date Mar 17, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20030226496
- Publication date Dec 11, 2003
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of epitaxially growing submicron group III nitride layers ut...
- Publication number 20020177312
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially for growing semiconductor device structur...
- Publication number 20020174833
- Publication date Nov 28, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for epitaxially growing semiconductor device structures w...
- Publication number 20020155713
- Publication date Oct 24, 2002
- Technologies & Devices International, Inc.
- Denis V. Tsvetkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Technology and Devices International, Inc.

Organization

Patents Grantslast 30 patents

HVPE apparatus and methods for growth of indium containing material...

Apparatus for epitaxially growing semiconductor device structures w...

Reactor for extended duration growth of gallium containing single c...

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and ALGaN single crystals

III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-b...

Apparatus for epitaxially growing semiconductor device structures w...

Method of epitaxially growing device structures with submicron grou...

Reactor for extended duration growth of gallium containing single c...

Method of epitaxially growing submicron group III nitride layers ut...

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk GaN single crystals

Method for growing III-V compound semiconductor structures with an...

Method of crystal growth and resulted structures

Method for fabricating bulk AlGaN single crystals

Method of epitaxially growing device structures with sharp layer in...

Method of manufacturing GaN ingots

P-n heterojunction-based structures utilizing HVPE grown III-V comp...

Method for growing p-n heterojunction-based structures utilizing HV...

Method for growing p-type III-V compound material utilizing HVPE te...

III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non...

P-N homojunction-based structures utilizing HVPE growth III-V compo...

Method for growing p-n homojunction-based structures utilizing HVPE...

Process for producing III-V nitride pn junctions and p-i-n junctions

Patents Applicationslast 30 patents

METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...

METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE S...

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

Method and apparatus for fabricating crack-free group III nitride s...

Bulk GaN and AIGaN single crystals

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

Method and apparatus for fabricating crack-free Group III nitride s...

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and AlGaN single crystals

Method of epitaxially growing submicron group III nitride layers ut...

Apparatus for epitaxially for growing semiconductor device structur...

Apparatus for epitaxially growing semiconductor device structures w...