United Semiconductor Corp.

Organization

Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,658,229
- Issue date May 23, 2023
- United Semiconductor (Xiamen) Co., Ltd.
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor transistor having an epitaxial ch...
- Patent number 11,637,183
- Issue date Apr 25, 2023
- United Semiconductor (Xiamen) Co., Ltd.
- Sheng-Hsu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slit valve with safety detect device
- Patent number 6,291,814
- Issue date Sep 18, 2001
- Utek Semiconductor Corporation
- P. C. Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fluorosilicate glass (FSG) layers with moisture-r...
- Patent number 6,284,677
- Issue date Sep 4, 2001
- United Semiconductor Corp.
- Chih-Hsiang Hsiao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Lifetime measurement of an ultra-thin dielectric layer
- Patent number 6,249,139
- Issue date Jun 19, 2001
- United Microelectronics Corp.
- Kuan-Yu Fu
- G01 - MEASURING TESTING
Information Patent Grant
Fabrication method for a shallow trench isolation structure
- Patent number 6,221,736
- Issue date Apr 24, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing two-bit flash memory
- Patent number 6,214,672
- Issue date Apr 10, 2001
- United Semiconductor Corp.
- Robin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating flash erasable programmable read only memory
- Patent number 6,207,504
- Issue date Mar 27, 2001
- United Semiconductor Corp.
- Alex Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for bottom electrode of capacitor
- Patent number 6,204,121
- Issue date Mar 20, 2001
- United Semiconductor Corp.
- Shih-Ching Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a dynamic random access memory capacitor
- Patent number 6,204,108
- Issue date Mar 20, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a stacked capacitor
- Patent number 6,200,850
- Issue date Mar 13, 2001
- United Microelectronics Corp.
- Tsung-Chih Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing even dielectric layer
- Patent number 6,200,897
- Issue date Mar 13, 2001
- United Semiconductor Corp.
- Brian Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating passivation of gate electrode
- Patent number 6,197,673
- Issue date Mar 6, 2001
- United Semiconductor Corp.
- Chia-Chieh Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene process
- Patent number 6,197,678
- Issue date Mar 6, 2001
- United Semiconductor Corp.
- Chia-Chieh Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming conductive line
- Patent number 6,197,680
- Issue date Mar 6, 2001
- United Semiconductor Corp.
- Jiunn-Hsien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 6,194,298
- Issue date Feb 27, 2001
- United Semiconductor Corp.
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating flash memory
- Patent number 6,194,271
- Issue date Feb 27, 2001
- United Semiconductor Corp.
- Chih-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow trench isolation structure
- Patent number 6,190,999
- Issue date Feb 20, 2001
- United Semiconductor Corp.
- Tsung-Yuan Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating shallow trench isolation using high density p...
- Patent number 6,191,004
- Issue date Feb 20, 2001
- United Semiconductor Corp.
- Chih-Hsiang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully self-aligned method for fabricating transistor and memory
- Patent number 6,190,958
- Issue date Feb 20, 2001
- United Semiconductor Corp.
- Shu-Ya Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM capacitor
- Patent number 6,187,629
- Issue date Feb 13, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming hemispherical silicon grains on designated areas...
- Patent number 6,187,630
- Issue date Feb 13, 2001
- United Semiconductor Corp.
- Anchor Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process
- Patent number 6,187,649
- Issue date Feb 13, 2001
- United Semiconductor Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a poly defect
- Patent number 6,183,819
- Issue date Feb 6, 2001
- United Semiconductor Corp.
- Chen-Chih Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating self-aligned silicide
- Patent number 6,184,115
- Issue date Feb 6, 2001
- United Semiconductor Corp.
- Hung-Yu Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high voltage semiconductor device
- Patent number 6,180,471
- Issue date Jan 30, 2001
- United Semiconductor Corp.
- Peter Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a flash memory with shallow trench isolation
- Patent number 6,180,459
- Issue date Jan 30, 2001
- United Semiconductor Corp.
- Yau-Kae Sheu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for gate structure having gate dielectric layers...
- Patent number 6,177,362
- Issue date Jan 23, 2001
- United Microelectronics Corp.
- Chih-Jen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing capacitor for mixed-moded circuit device
- Patent number 6,177,327
- Issue date Jan 23, 2001
- United Semiconductor Corp.
- Yu-Feng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming hemispherical grained silicon structure
- Patent number 6,171,955
- Issue date Jan 9, 2001
- United Semiconductor Corp.
- Shih-Ching Chen
- H01 - BASIC ELECTRIC ELEMENTS

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Trademarklast 30 trademarks

Information Trademark
75543164 - USC
- Serial number 75543164
- Registration number 2328296
- Filing date Aug 25, 1998
- UNITED SEMICONDUCTOR CORP.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

United Semiconductor Corp.

Organization

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

Method of forming a semiconductor transistor having an epitaxial ch...

Slit valve with safety detect device

Method of forming fluorosilicate glass (FSG) layers with moisture-r...

Lifetime measurement of an ultra-thin dielectric layer

Fabrication method for a shallow trench isolation structure

Method for manufacturing two-bit flash memory

Method of fabricating flash erasable programmable read only memory

Method for bottom electrode of capacitor

Method of fabricating a dynamic random access memory capacitor

Method for forming a stacked capacitor

Method for manufacturing even dielectric layer

Method of fabricating passivation of gate electrode

Damascene process

Method for forming conductive line

Method of fabricating semiconductor device

Method for fabricating flash memory

Method for fabricating a shallow trench isolation structure

Method of fabricating shallow trench isolation using high density p...

Fully self-aligned method for fabricating transistor and memory

Method of fabricating a DRAM capacitor

Method for forming hemispherical silicon grains on designated areas...

Shallow trench isolation process

Method for processing a poly defect

Method of fabricating self-aligned silicide

Method of fabricating high voltage semiconductor device

Method for fabricating a flash memory with shallow trench isolation

Fabrication method for gate structure having gate dielectric layers...

Method of manufacturing capacitor for mixed-moded circuit device

Method for forming hemispherical grained silicon structure

Trademarklast 30 trademarks

75543164 - USC