United Silicon Carbide, Inc

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Monmouth Junction, NJ, US

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Patents Grantslast 30 patents

Information Patent Grant
Reusable wide bandgap semiconductor substrate
- Patent number 11,710,662
- Issue date Jul 25, 2023
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-sided chip stack assembly
- Patent number 11,211,373
- Issue date Dec 28, 2021
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reusable wide bandgap semiconductor substrate
- Patent number 10,825,733
- Issue date Nov 3, 2020
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Series-connected FETs in active linear mode
- Patent number 10,673,396
- Issue date Jun 2, 2020
- United Silicon Carbide, Inc.
- Jonathan Dodge
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Trench vertical JFET with improved threshold voltage control
- Patent number 10,396,215
- Issue date Aug 27, 2019
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET made using a reduced masked set
- Patent number 10,367,098
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistor
- Patent number 10,147,813
- Issue date Dec 4, 2018
- United Silicon Carbide, Inc.
- Xing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar triple-implanted JFET
- Patent number 10,121,907
- Issue date Nov 6, 2018
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET made using a reduced mask set
- Patent number 10,056,500
- Issue date Aug 21, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,050,154
- Issue date Aug 14, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched and implanted bipolar junction transistor
- Patent number 9,917,180
- Issue date Mar 13, 2018
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switch module
- Patent number 9,866,213
- Issue date Jan 9, 2018
- United Silicon Carbide, Inc.
- Hao Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hybrid wide-bandgap semiconductor bipolar switches
- Patent number 9,721,944
- Issue date Aug 1, 2017
- United Silicon Carbide, Inc.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset leadframe cascode package
- Patent number 9,716,057
- Issue date Jul 25, 2017
- United Silicon Carbide, Inc.
- Hao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar triple-implanted JFET
- Patent number 9,653,618
- Issue date May 16, 2017
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid wide-bandgap semiconductor bipolar switches
- Patent number 9,331,068
- Issue date May 3, 2016
- United Silicon Carbide, Inc.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switch
- Patent number 9,325,306
- Issue date Apr 26, 2016
- United Silicon Carbide, Inc.
- Xueqing Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide MOSFET with integrated MOS diode
- Patent number 9,324,807
- Issue date Apr 26, 2016
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switch
- Patent number 9,312,847
- Issue date Apr 12, 2016
- United Silicon Carbide, Inc.
- Xueqing Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage switch
- Patent number 9,190,993
- Issue date Nov 17, 2015
- United Silicon Carbide, Inc.
- Xueqing Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithically integrated cascode switches
- Patent number 9,148,139
- Issue date Sep 29, 2015
- United Silicon Carbide, Inc.
- Anup Bhalla
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Trench shield connected JFET
- Patent number 9,087,911
- Issue date Jul 21, 2015
- United Silicon Carbide, Inc.
- Peter Alexandrov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode switching circuit
- Patent number 9,083,343
- Issue date Jul 14, 2015
- United Silicon Carbide, Inc.
- Xueqing Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Trenched and implanted accumulation mode metal-oxide-semiconductor...
- Patent number 9,054,183
- Issue date Jun 9, 2015
- United Silicon Carbide, Inc.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ohmic contacts on wide band gap semiconductors
- Patent number 8,962,468
- Issue date Feb 24, 2015
- United Silicon Carbide, Inc.
- John L. Hostetler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vjfet devices
- Patent number 8,860,098
- Issue date Oct 14, 2014
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state disconnect device
- Patent number 8,004,806
- Issue date Aug 23, 2011
- United Silicon Carbide, Inc.
- Xueqing Li
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Double-gated vertical junction field effect power transistor
- Patent number 6,841,812
- Issue date Jan 11, 2005
- United Silicon Carbide, Inc.
- Jian Hui Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REUSABLE WIDE BANDGAP SEMICONDUCTOR SUBSTRATE
- Publication number 20210005517
- Publication date Jan 7, 2021
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REUSABLE WIDE BANDGAP SEMICONDUCTOR SUBSTRATE
- Publication number 20200135565
- Publication date Apr 30, 2020
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20180342626
- Publication date Nov 29, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical JFET Made Using A Reduced Masked Set
- Publication number 20180226513
- Publication date Aug 9, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Perimeter Control Of Crack Propagation In Semiconductor Wafers
- Publication number 20180102326
- Publication date Apr 12, 2018
- UNITED SILICON CARBIDE, INC.
- William Kurt Simon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Field Effect Transistor
- Publication number 20170256642
- Publication date Sep 7, 2017
- UNITED SILICON CARBIDE, INC.
- Xing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Multi-implanted JFET
- Publication number 20170213917
- Publication date Jul 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SHIELDED-GATE TRENCH MOS-CONTROLLED SILICON CARBIDE SW...
- Publication number 20170213908
- Publication date Jul 27, 2017
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20170133518
- Publication date May 11, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass
- Publication number 20170125394
- Publication date May 4, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar Triple-implanted JFET
- Publication number 20170117392
- Publication date Apr 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR TRIPLE-IMPLANTED JFET
- Publication number 20170117418
- Publication date Apr 27, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JFET MADE USING A REDUCED MASK SET
- Publication number 20170018657
- Publication date Jan 19, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical JFET Made Using A Reduced Mask Set
- Publication number 20170018627
- Publication date Jan 19, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED AND IMPLANTED BIPOLAR JUNCTION TRANSISTOR
- Publication number 20170005183
- Publication date Jan 5, 2017
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Improved Threshold Voltage Control
- Publication number 20160380117
- Publication date Dec 29, 2016
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL
- Publication number 20160336432
- Publication date Nov 17, 2016
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL
- Publication number 20160268446
- Publication date Sep 15, 2016
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES
- Publication number 20160118381
- Publication date Apr 28, 2016
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES
- Publication number 20150115289
- Publication date Apr 30, 2015
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VJFET DEVICES
- Publication number 20140264477
- Publication date Sep 18, 2014
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED AND IMPLANTED ACCUMULATION MODE METAL-OXIDE-SEMICONDUCTOR...
- Publication number 20140015036
- Publication date Jan 16, 2014
- UNITED SILICON CARBIDE, INC.
- Leonid Fursin
- H01 - BASIC ELECTRIC ELEMENTS

United Silicon Carbide, Inc

Organization

Patents Grantslast 30 patents

Reusable wide bandgap semiconductor substrate

Double-sided chip stack assembly

Reusable wide bandgap semiconductor substrate

Series-connected FETs in active linear mode

Trench vertical JFET with improved threshold voltage control

Vertical JFET made using a reduced masked set

Trench vertical JFET with ladder termination

Tunneling field effect transistor

Planar triple-implanted JFET

Vertical JFET made using a reduced mask set

Trench vertical JFET with ladder termination

Trenched and implanted bipolar junction transistor

High voltage switch module

Hybrid wide-bandgap semiconductor bipolar switches

Offset leadframe cascode package

Planar triple-implanted JFET

Hybrid wide-bandgap semiconductor bipolar switches

High voltage switch

Silicon carbide MOSFET with integrated MOS diode

High voltage switch

High voltage switch

Monolithically integrated cascode switches

Trench shield connected JFET

Cascode switching circuit

Trenched and implanted accumulation mode metal-oxide-semiconductor...

Formation of ohmic contacts on wide band gap semiconductors

Vjfet devices

Solid-state disconnect device

Double-gated vertical junction field effect power transistor

Patents Applicationslast 30 patents

REUSABLE WIDE BANDGAP SEMICONDUCTOR SUBSTRATE

REUSABLE WIDE BANDGAP SEMICONDUCTOR SUBSTRATE

Trench Vertical JFET With Ladder Termination

Vertical JFET Made Using A Reduced Masked Set

Perimeter Control Of Crack Propagation In Semiconductor Wafers

Tunneling Field Effect Transistor

Planar Multi-implanted JFET

SELF-ALIGNED SHIELDED-GATE TRENCH MOS-CONTROLLED SILICON CARBIDE SW...

Trench Vertical JFET With Ladder Termination

Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass

Planar Triple-implanted JFET

PLANAR TRIPLE-IMPLANTED JFET

VERTICAL JFET MADE USING A REDUCED MASK SET

Vertical JFET Made Using A Reduced Mask Set

TRENCHED AND IMPLANTED BIPOLAR JUNCTION TRANSISTOR

Trench Vertical JFET With Improved Threshold Voltage Control

TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL

TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL

HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES

HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES

VJFET DEVICES

TRENCHED AND IMPLANTED ACCUMULATION MODE METAL-OXIDE-SEMICONDUCTOR...

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