Visual Photonics Epitaxy Co., Ltd.

Organization

Taoyuan, TW

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Patents Grantslast 30 patents

Information Patent Grant
High ruggedness heterojunction bipolar transistor (HBT)
- Patent number 11,929,427
- Issue date Mar 12, 2024
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser diode
- Patent number 11,862,938
- Issue date Jan 2, 2024
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxial wafer
- Patent number 11,799,011
- Issue date Oct 24, 2023
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP...
- Patent number 11,721,954
- Issue date Aug 8, 2023
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measurement method of reflection spectrum of vertical cavity surfac...
- Patent number 11,482,830
- Issue date Oct 25, 2022
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser diode with defect blocking layer
- Patent number 11,158,995
- Issue date Oct 26, 2021
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High ruggedness heterojunction bipolar transistor
- Patent number 11,133,405
- Issue date Sep 28, 2021
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High ruggedness heterojunction bipolar transistor structure
- Patent number 11,049,936
- Issue date Jun 29, 2021
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor structure with a bandgap graded h...
- Patent number 10,818,781
- Issue date Oct 27, 2020
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor structure with a bandgap graded h...
- Patent number 10,651,298
- Issue date May 12, 2020
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Directed epitaxial heterojunction bipolar transistor
- Patent number 9,853,136
- Issue date Dec 26, 2017
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility bipolar transistor
- Patent number 9,130,027
- Issue date Sep 8, 2015
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiHEMT device having a stacked separating layer
- Patent number 8,994,069
- Issue date Mar 31, 2015
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient suppression semiconductor device
- Patent number 7,573,080
- Issue date Aug 11, 2009
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiFET semiconductor device having vertically integrated FET and HBT
- Patent number 7,385,236
- Issue date Jun 10, 2008
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of high-brightness light emitting diode having r...
- Patent number 7,384,808
- Issue date Jun 10, 2008
- Visual Photonics Epitaxy Co., Ltd.
- Jin-Hsiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-brightness light emitting diode having reflective layer
- Patent number 7,335,924
- Issue date Feb 26, 2008
- Visual Photonics Epitaxy Co., Ltd.
- Jin-Hsiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor structure
- Patent number 7,224,005
- Issue date May 29, 2007
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with a metal-coated reflective permanent subst...
- Patent number 6,287,882
- Issue date Sep 11, 2001
- Visual Photonics Epitaxy Co., Ltd.
- Kuo-Hsiung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with a permanent subtrate of transparent glass...
- Patent number 6,258,699
- Issue date Jul 10, 2001
- Visual Photonics Epitaxy Co., Ltd.
- Kuo-Hsiung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode having a layer of AlGaInP graded composition
- Patent number 6,100,544
- Issue date Aug 8, 2000
- Visual Photonics Epitaxy Co., Ltd.
- Kun-Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode having a transparent substrate
- Patent number 6,064,076
- Issue date May 16, 2000
- Visual Photonics Epitaxy Co., Ltd.
- Lung-Chien Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240222477
- Publication date Jul 4, 2024
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING DEFECT BARRIER REGION
- Publication number 20240079510
- Publication date Mar 7, 2024
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truong Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE HAVING CURRENT CLAMPING...
- Publication number 20240079450
- Publication date Mar 7, 2024
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung CHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DIODE
- Publication number 20240030685
- Publication date Jan 25, 2024
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truong Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER EPITAXIAL STRUCTURE
- Publication number 20230396040
- Publication date Dec 7, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truong DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20230307527
- Publication date Sep 28, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE-EMITTING LASER EPITAXIAL STRUCTURE HAVING A...
- Publication number 20230307889
- Publication date Sep 28, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truong DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH SMALL DIV...
- Publication number 20230121340
- Publication date Apr 20, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truoung Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER DIODE WITH THE...
- Publication number 20230116144
- Publication date Apr 13, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Van-Truoung Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DIODE INCLUDING MULTIPLE ACTIVE LAYERS AND A GR...
- Publication number 20230102405
- Publication date Mar 30, 2023
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chien-Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR EPITAXIAL WAFER
- Publication number 20220328645
- Publication date Oct 13, 2022
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210226045
- Publication date Jul 22, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RUGGEDNESS HETERJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20210217881
- Publication date Jul 15, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH TUNNEL JU...
- Publication number 20210104872
- Publication date Apr 8, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL)
- Publication number 20210091537
- Publication date Mar 25, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASUREMENT METHOD OF REFLECTION SPECTRUM OF VERTICAL CAVITY SURFAC...
- Publication number 20210075185
- Publication date Mar 11, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) HAVING ALGAASP...
- Publication number 20210021104
- Publication date Jan 21, 2021
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH MULTIPLE...
- Publication number 20200403379
- Publication date Dec 24, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LASER DIODE
- Publication number 20200395737
- Publication date Dec 17, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20200203510
- Publication date Jun 25, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...
- Publication number 20200194573
- Publication date Jun 18, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE
- Publication number 20200161421
- Publication date May 21, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODE WITH DEFECT BLOCKING LAYER
- Publication number 20190372310
- Publication date Dec 5, 2019
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...
- Publication number 20190115458
- Publication date Apr 18, 2019
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BLOCKING LAYER STRUCTURE
- Publication number 20160049502
- Publication date Feb 18, 2016
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20150255585
- Publication date Sep 10, 2015
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS

Visual Photonics Epitaxy Co., Ltd.

Organization

Patents Grantslast 30 patents

High ruggedness heterojunction bipolar transistor (HBT)

Semiconductor laser diode

Semiconductor epitaxial wafer

Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP...

Measurement method of reflection spectrum of vertical cavity surfac...

Laser diode with defect blocking layer

High ruggedness heterojunction bipolar transistor

High ruggedness heterojunction bipolar transistor structure

Heterojunction bipolar transistor structure with a bandgap graded h...

Heterojunction bipolar transistor structure with a bandgap graded h...

Directed epitaxial heterojunction bipolar transistor

High electron mobility bipolar transistor

BiHEMT device having a stacked separating layer

Transient suppression semiconductor device

BiFET semiconductor device having vertically integrated FET and HBT

Fabrication method of high-brightness light emitting diode having r...

High-brightness light emitting diode having reflective layer

Heterojunction bipolar transistor structure

Light emitting diode with a metal-coated reflective permanent subst...

Light emitting diode with a permanent subtrate of transparent glass...

Light-emitting diode having a layer of AlGaInP graded composition

Light-emitting diode having a transparent substrate

Patents Applicationslast 30 patents

HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

SEMICONDUCTOR COMPONENT HAVING DEFECT BARRIER REGION

HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE HAVING CURRENT CLAMPING...

SEMICONDUCTOR LASER DIODE

SEMICONDUCTOR LASER EPITAXIAL STRUCTURE

HETEROJUNCTION BIPOLAR TRANSISTOR

VERTICAL CAVITY SURFACE-EMITTING LASER EPITAXIAL STRUCTURE HAVING A...

VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH SMALL DIV...

VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER DIODE WITH THE...

SEMICONDUCTOR LASER DIODE INCLUDING MULTIPLE ACTIVE LAYERS AND A GR...

SEMICONDUCTOR EPITAXIAL WAFER

HETEROJUNCTION BIPOLAR TRANSISTOR

HIGH RUGGEDNESS HETERJUNCTION BIPOLAR TRANSISTOR (HBT)

VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH TUNNEL JU...

HIGH-POWER VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL)

MEASUREMENT METHOD OF REFLECTION SPECTRUM OF VERTICAL CAVITY SURFAC...

VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) HAVING ALGAASP...

VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) WITH MULTIPLE...

SEMICONDUCTOR LASER DIODE

HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...

HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE

LASER DIODE WITH DEFECT BLOCKING LAYER

HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BLOCKING LAYER STRUCTURE

DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR

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