Yoshitaka Sugawara

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Hitachi-shi, JP

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Patents Grantslast 30 patents

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Semiconductor device comprising bipolar and unipolar transistors in...
- Patent number 8,786,024
- Issue date Jul 22, 2014
- Yoshitaka Sugawara
- Yoshitaka Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with high breakdown voltage
- Patent number 8,748,937
- Issue date Jun 10, 2014
- Fuji Electric Co., Ltd.
- Yoshitaka Sugawara
- H01 - BASIC ELECTRIC ELEMENTS

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