Abbas Torabi

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North Andover, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride high electron mobility transistors (HEMTs) having r...
- Patent number 11,545,566
- Issue date Jan 3, 2023
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped barrier layers in epitaxial group III nitrides
- Patent number 9,419,125
- Issue date Aug 16, 2016
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electromagnetic interference protection structure
- Patent number 8,895,925
- Issue date Nov 25, 2014
- Raytheon Company
- Abbas Torabi
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Gallium Nitride High Electron Mobility Transistors (HEMTs) Having R...
- Publication number 20210202729
- Publication date Jul 1, 2021
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A NITRIDE ACTIVE LAYER ON A DOPED SI...
- Publication number 20130320356
- Publication date Dec 5, 2013
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROMAGNETIC INTERFERENCE PROTECTION STRUCTURE
- Publication number 20130221219
- Publication date Aug 29, 2013
- Raytheon Company
- Abbas Torabi
- G01 - MEASURING TESTING