Abhijith Prakash

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Erase method for non-volatile memory with multiple tiers
- Patent number 12,148,478
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Control gate signal for data retention in nonvolatile memory
- Patent number 12,087,363
- Issue date Sep 10, 2024
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Pre-position dummy word line to facilitate write erase capability o...
- Patent number 12,046,305
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Recovery pulses to counter cumulative read disturb
- Patent number 11,972,808
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Refresh frequency-dependent system-level trimming of verify level o...
- Patent number 11,972,818
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device that is optimized for operation at different temperat...
- Patent number 11,961,573
- Issue date Apr 16, 2024
- SanDisk Technologies, LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Edge word line data retention improvement for memory apparatus with...
- Patent number 11,961,572
- Issue date Apr 16, 2024
- SanDisk Technologies, LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-dependent word line voltage and discharge rate for refr...
- Patent number 11,894,051
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-side staircase pre-charge in sub-block mode of three-tier non-v...
- Patent number 11,894,072
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to fix cumulative read induced drain side select gate downsh...
- Patent number 11,894,067
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Techniques for erasing the memory cells of edge word lines
- Patent number 11,848,059
- Issue date Dec 19, 2023
- SanDisk Technologies LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional memory device containing truncated channels and m...
- Patent number 11,758,718
- Issue date Sep 12, 2023
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Control gate signal for data retention in nonvolatile memory
- Patent number 11,605,430
- Issue date Mar 14, 2023
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for compensating for erase speed variations due...
- Patent number 11,545,226
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Read operation or word line voltage refresh operation in memory dev...
- Patent number 11,501,837
- Issue date Nov 15, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Application based verify level offsets for non-volatile memory
- Patent number 11,482,289
- Issue date Oct 25, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming with selectively skipped bitscans and fewer veri...
- Patent number 11,468,950
- Issue date Oct 11, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level program pulse for programming single level memory cells...
- Patent number 11,456,042
- Issue date Sep 27, 2022
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Countermeasures for periodic over programming for non-volatile memory
- Patent number 11,450,393
- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques with fewer verify pulses to improve performance
- Patent number 11,410,739
- Issue date Aug 9, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Refresh operations for memory cells based on susceptibility to read...
- Patent number 11,264,110
- Issue date Mar 1, 2022
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing post-read disturb in a nonvolatile memory device
- Patent number 11,139,030
- Issue date Oct 5, 2021
- SanDisk Technologies LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Refresh operations for dedicated groups of blocks of memory cells
- Patent number 11,043,280
- Issue date Jun 22, 2021
- SanDisk Technologies LLC
- Abhijith Prakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature and cycling dependent refresh operation for memory cells
- Patent number 11,037,641
- Issue date Jun 15, 2021
- SanDisk Technologies LLC
- Abhijith Prakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Countermeasures for first read issue
- Patent number 10,861,537
- Issue date Dec 8, 2020
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing post-read disturb in a nonvolatile memory device
- Patent number 10,726,891
- Issue date Jul 28, 2020
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
POSITIVE SENSING IN LOW POWER OPERATION MODE IN A MEMORY DEVICE
- Publication number 20240386969
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
PLANE AND BLOCK LOCATION DEPENDENT VOLTAGE BIASES IN NAND MEMORY
- Publication number 20240363168
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
REGULAR TRANSISTOR THRESHOLD VOLTAGE REFRESH FOR SEMI-CIRCLE DRAIN...
- Publication number 20240363177
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE
- Publication number 20240304251
- Publication date Sep 12, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
LOOP DEPENDENT BIT LINE AND READ BIASES IN A MEMORY DEVICE
- Publication number 20240304262
- Publication date Sep 12, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
INTERMEDIATE RE-VERIFY FOR ACHIEVING TIGHTER THRESHOLD VOLTAGE DIST...
- Publication number 20240290402
- Publication date Aug 29, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STAGE PROGRAMMING TECHNIQUES WITH THREE STATES PER MEMORY CEL...
- Publication number 20240212767
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING TIME-TAG READ ERRORS WITH RESPECT TO NON-VOLATILE MEMORY S...
- Publication number 20240185928
- Publication date Jun 6, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIT LINE MODULATION TO COMPENSATE FOR CELL SOURCE VARIATION
- Publication number 20240105269
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Anirudh Amarnath
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE METHOD FOR NON-VOLATILE MEMORY WITH MULTIPLE TIERS
- Publication number 20240105265
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...
- Publication number 20230410901
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
REFRESH FREQUENCY-DEPENDENT SYSTEM-LEVEL TRIMMING OF VERIFY LEVEL O...
- Publication number 20230410922
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
DIE BY DIE TRIMMING OF DRAIN-SIDE SELECT GATE THRESHOLD VOLTAGE TO...
- Publication number 20230410912
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Die Management
- Publication number 20230409230
- Publication date Dec 21, 2023
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-SIDE STAIRCASE PRE-CHARGE IN SUB-BLOCK MODE OF THREE-TIER NON-V...
- Publication number 20230343400
- Publication date Oct 26, 2023
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
RECOVERY PULSES TO COUNTER CUMULATIVE READ DISTURB
- Publication number 20230307070
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-POSITION DUMMY WORD LINE TO FACILITATE WRITE ERASE CAPABILITY O...
- Publication number 20230253056
- Publication date Aug 10, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL GATE SIGNAL FOR DATA RETENTION IN NONVOLATILE MEMORY
- Publication number 20230186993
- Publication date Jun 15, 2023
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO FIX CUMULATIVE READ INDUCED DRAIN SIDE SELECT GATE DOWNSH...
- Publication number 20230186998
- Publication date Jun 15, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE THAT IS OPTIMIZED FOR OPERATION AT DIFFERENT TEMPERAT...
- Publication number 20230162809
- Publication date May 25, 2023
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR ERASING THE MEMORY CELLS OF EDGE WORD LINES
- Publication number 20230154550
- Publication date May 18, 2023
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
EDGE WORD LINE DATA RETENTION IMPROVEMENT FOR MEMORY APPARATUS WITH...
- Publication number 20230130394
- Publication date Apr 27, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH IMPROVED ENDURANCE
- Publication number 20230053269
- Publication date Feb 16, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING TRUNCATED CHANNELS AND M...
- Publication number 20230016518
- Publication date Jan 19, 2023
- SANDISK TECHNOLOGIES LLC
- Yu-Chung LIEN
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR COMPENSATING FOR ERASE SPEED VARIATIONS DUE...
- Publication number 20220415416
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
Data Retention-Specific Refresh Read
- Publication number 20220413761
- Publication date Dec 29, 2022
- Western Digital Technologies, Inc.
- Muhammad MASUDUZZAMAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ OPERATION OR WORD LINE VOLTAGE REFRESH OPERATION IN MEMORY DEV...
- Publication number 20220366990
- Publication date Nov 17, 2022
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED BITSCANS AND FEWER VERI...
- Publication number 20220336019
- Publication date Oct 20, 2022
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL PROGRAM PULSE FOR PROGRAMMING SINGLE LEVEL MEMORY CELLS...
- Publication number 20220328112
- Publication date Oct 13, 2022
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
COUNTERMEASURES FOR PERIODIC OVER PROGRAMMING FOR NON-VOLATILE MEMORY
- Publication number 20220293197
- Publication date Sep 15, 2022
- SANDISK TECHNOLOGIES LLC
- Abhijith Prakash
- G11 - INFORMATION STORAGE

Abhijith Prakash

Person

Patents Grantslast 30 patents

Erase method for non-volatile memory with multiple tiers

Control gate signal for data retention in nonvolatile memory

Pre-position dummy word line to facilitate write erase capability o...

Recovery pulses to counter cumulative read disturb

Refresh frequency-dependent system-level trimming of verify level o...

Memory device that is optimized for operation at different temperat...

Edge word line data retention improvement for memory apparatus with...

Temperature-dependent word line voltage and discharge rate for refr...

Two-side staircase pre-charge in sub-block mode of three-tier non-v...

Method to fix cumulative read induced drain side select gate downsh...

Techniques for erasing the memory cells of edge word lines

Three dimensional memory device containing truncated channels and m...

Control gate signal for data retention in nonvolatile memory

Systems and methods for compensating for erase speed variations due...

Read operation or word line voltage refresh operation in memory dev...

Application based verify level offsets for non-volatile memory

Memory programming with selectively skipped bitscans and fewer veri...

Multi-level program pulse for programming single level memory cells...

Countermeasures for periodic over programming for non-volatile memory

Programming techniques with fewer verify pulses to improve performance

Refresh operations for memory cells based on susceptibility to read...

Reducing post-read disturb in a nonvolatile memory device

Refresh operations for dedicated groups of blocks of memory cells

Temperature and cycling dependent refresh operation for memory cells

Countermeasures for first read issue

Reducing post-read disturb in a nonvolatile memory device

Patents Applicationslast 30 patents

POSITIVE SENSING IN LOW POWER OPERATION MODE IN A MEMORY DEVICE

PLANE AND BLOCK LOCATION DEPENDENT VOLTAGE BIASES IN NAND MEMORY

REGULAR TRANSISTOR THRESHOLD VOLTAGE REFRESH FOR SEMI-CIRCLE DRAIN...

GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE

LOOP DEPENDENT BIT LINE AND READ BIASES IN A MEMORY DEVICE

INTERMEDIATE RE-VERIFY FOR ACHIEVING TIGHTER THRESHOLD VOLTAGE DIST...

MULTI-STAGE PROGRAMMING TECHNIQUES WITH THREE STATES PER MEMORY CEL...

REDUCING TIME-TAG READ ERRORS WITH RESPECT TO NON-VOLATILE MEMORY S...

BIT LINE MODULATION TO COMPENSATE FOR CELL SOURCE VARIATION

ERASE METHOD FOR NON-VOLATILE MEMORY WITH MULTIPLE TIERS

TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...

REFRESH FREQUENCY-DEPENDENT SYSTEM-LEVEL TRIMMING OF VERIFY LEVEL O...

DIE BY DIE TRIMMING OF DRAIN-SIDE SELECT GATE THRESHOLD VOLTAGE TO...

Memory Die Management

TWO-SIDE STAIRCASE PRE-CHARGE IN SUB-BLOCK MODE OF THREE-TIER NON-V...

RECOVERY PULSES TO COUNTER CUMULATIVE READ DISTURB

PRE-POSITION DUMMY WORD LINE TO FACILITATE WRITE ERASE CAPABILITY O...

CONTROL GATE SIGNAL FOR DATA RETENTION IN NONVOLATILE MEMORY

METHOD TO FIX CUMULATIVE READ INDUCED DRAIN SIDE SELECT GATE DOWNSH...

MEMORY DEVICE THAT IS OPTIMIZED FOR OPERATION AT DIFFERENT TEMPERAT...

TECHNIQUES FOR ERASING THE MEMORY CELLS OF EDGE WORD LINES

EDGE WORD LINE DATA RETENTION IMPROVEMENT FOR MEMORY APPARATUS WITH...

MEMORY DEVICE WITH IMPROVED ENDURANCE

THREE DIMENSIONAL MEMORY DEVICE CONTAINING TRUNCATED CHANNELS AND M...

SYSTEMS AND METHODS FOR COMPENSATING FOR ERASE SPEED VARIATIONS DUE...

Data Retention-Specific Refresh Read

READ OPERATION OR WORD LINE VOLTAGE REFRESH OPERATION IN MEMORY DEV...

MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED BITSCANS AND FEWER VERI...

MULTI-LEVEL PROGRAM PULSE FOR PROGRAMMING SINGLE LEVEL MEMORY CELLS...

COUNTERMEASURES FOR PERIODIC OVER PROGRAMMING FOR NON-VOLATILE MEMORY