Abraham Yoo

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Hwasung-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device having impurity region
- Patent number 10,164,017
- Issue date Dec 25, 2018
- Samsung Electronics Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having impurity region
- Patent number 9,911,809
- Issue date Mar 6, 2018
- Samsung Electronics Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared contact structure, semiconductor device and method of fabric...
- Patent number 8,114,730
- Issue date Feb 14, 2012
- Samsung Electronics Co., Ltd.
- Abraham Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared contact structure, semiconductor device and method of fabric...
- Patent number 7,781,282
- Issue date Aug 24, 2010
- Samsung Electronics Co., Ltd.
- Abraham Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING IMPURITY REGION
- Publication number 20180158911
- Publication date Jun 7, 2018
- Samsung Electronics Co., Ltd.
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPURITY REGION
- Publication number 20170373151
- Publication date Dec 28, 2017
- Samsung Electronics Co., Ltd.
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shared contact structure, semiconductor device and method of fabric...
- Publication number 20100291746
- Publication date Nov 18, 2010
- Abraham Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shared contact structure, semiconductor device and method of fabric...
- Publication number 20070018254
- Publication date Jan 25, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Abraham Yoo
- H01 - BASIC ELECTRIC ELEMENTS