Abu Naser Zainuddin

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with loop dependant ramp-up rate
- Patent number 12,354,664
- Issue date Jul 8, 2025
- SanDisk Technologies, Inc.
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Grant
Distributed temperature sensing scheme to suppress peak Icc in non-...
- Patent number 12,346,578
- Issue date Jul 1, 2025
- SanDisk Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Word line dependent pass voltage ramp rate to improve performance o...
- Patent number 12,176,032
- Issue date Dec 24, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with programmable resistance non-data word line
- Patent number 12,099,728
- Issue date Sep 24, 2024
- SANDISK TECHNOLOGIES LLC
- Towhidur Razzak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
NAND memory with different pass voltage ramp rates for binary and m...
- Patent number 12,046,314
- Issue date Jul 23, 2024
- SanDisk Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Loop dependent word line ramp start time for program verify of mult...
- Patent number 11,875,043
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Modifying program and erase parameters for single-bit memory cells...
- Patent number 11,705,206
- Issue date Jul 18, 2023
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimized programming with a single bit per memory cell and multipl...
- Patent number 11,475,957
- Issue date Oct 18, 2022
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling word line voltages to reduce read disturb in a memory d...
- Patent number 11,205,493
- Issue date Dec 21, 2021
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with temporary kickdown of source voltage before sensing
- Patent number 11,139,018
- Issue date Oct 5, 2021
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
UNIFORM GIDL CURRENT DURING NAND ERASE
- Publication number 20250232817
- Publication date Jul 17, 2025
- Western Digital Technologies, Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SAVING DURING OPEN BLOCK READ WITH LARGE BLOCK OPENNESS
- Publication number 20250156095
- Publication date May 15, 2025
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUPPRESSION OF PEAK ICC DURING BLOCK SELECTION IN NON-VOLATILE MEMO...
- Publication number 20250131964
- Publication date Apr 24, 2025
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH CURRENT DETECTION CIRCUIT
- Publication number 20250118379
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED TEMPERATURE SENSING SCHEME TO SUPPRESS PEAK ICC IN NON-...
- Publication number 20240427502
- Publication date Dec 26, 2024
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
AUTOMATIC BIT LINE VOLTAGE AND BIT LINE VOLTAGE TEMPERATURE COMPENS...
- Publication number 20240411476
- Publication date Dec 12, 2024
- Western Digital Technologies, Inc.
- Albert Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAM VERIFY WORD LINE RAMPING DELAY FOR LOWER CURRENT CONSUMPTIO...
- Publication number 20240395343
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...
- Publication number 20240355400
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
OPEN BLOCK READ ICC REDUCTION
- Publication number 20240290395
- Publication date Aug 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR SELECTIVELY REDUCING CHARGE PUMP SPEED DUR...
- Publication number 20240257878
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY
- Publication number 20240233841
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE
- Publication number 20240233826
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY
- Publication number 20240136001
- Publication date Apr 25, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM PULSE DURATION INCREASE FOR NAND PROGRAM FAILURE
- Publication number 20240127891
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE RESISTANCE NON-DATA WORD LINE
- Publication number 20240103742
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Towhidur Razzak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...
- Publication number 20240071544
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DEPENDENT PASS VOLTAGE RAMP RATE TO IMPROVE PERFORMANCE O...
- Publication number 20240071493
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFYING PROGRAM AND ERASE PARAMETERS FOR SINGLE-BIT MEMORY CELLS...
- Publication number 20230058038
- Publication date Feb 23, 2023
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZED PROGRAMMING WITH A SINGLE BIT PER MEMORY CELL AND MULTIPL...
- Publication number 20220223209
- Publication date Jul 14, 2022
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS

Abu Naser Zainuddin

Person

Patents Grantslast 30 patents

Non-volatile memory with loop dependant ramp-up rate

Distributed temperature sensing scheme to suppress peak Icc in non-...

Word line dependent pass voltage ramp rate to improve performance o...

Non-volatile memory with programmable resistance non-data word line

NAND memory with different pass voltage ramp rates for binary and m...

Loop dependent word line ramp start time for program verify of mult...

Modifying program and erase parameters for single-bit memory cells...

Optimized programming with a single bit per memory cell and multipl...

Controlling word line voltages to reduce read disturb in a memory d...

Memory device with temporary kickdown of source voltage before sensing

Patents Applicationslast 30 patents

UNIFORM GIDL CURRENT DURING NAND ERASE

POWER SAVING DURING OPEN BLOCK READ WITH LARGE BLOCK OPENNESS

SUPPRESSION OF PEAK ICC DURING BLOCK SELECTION IN NON-VOLATILE MEMO...

NON-VOLATILE MEMORY WITH CURRENT DETECTION CIRCUIT

DISTRIBUTED TEMPERATURE SENSING SCHEME TO SUPPRESS PEAK ICC IN NON-...

AUTOMATIC BIT LINE VOLTAGE AND BIT LINE VOLTAGE TEMPERATURE COMPENS...

PROGRAM VERIFY WORD LINE RAMPING DELAY FOR LOWER CURRENT CONSUMPTIO...

SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...

OPEN BLOCK READ ICC REDUCTION

APPARATUS AND METHOD FOR SELECTIVELY REDUCING CHARGE PUMP SPEED DUR...

NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY

NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE

NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY

PROGRAM PULSE DURATION INCREASE FOR NAND PROGRAM FAILURE

NON-VOLATILE MEMORY WITH PROGRAMMABLE RESISTANCE NON-DATA WORD LINE

NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...

WORD LINE DEPENDENT PASS VOLTAGE RAMP RATE TO IMPROVE PERFORMANCE O...

MODIFYING PROGRAM AND ERASE PARAMETERS FOR SINGLE-BIT MEMORY CELLS...

OPTIMIZED PROGRAMMING WITH A SINGLE BIT PER MEMORY CELL AND MULTIPL...