Adam J. Williams

Person

Santa Paula, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Highly scaled linear GaN HEMT Structures
- Patent number 10,714,605
- Issue date Jul 14, 2020
- HRL Laboratories, LLC
- Jeong-Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 10,134,851
- Issue date Nov 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 9,899,482
- Issue date Feb 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,419,122
- Issue date Aug 16, 2016
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,202,880
- Issue date Dec 1, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride metal-insulator-semiconductor field-effect transistor
- Patent number 9,059,200
- Issue date Jun 16, 2015
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off III-nitride transistors with high threshold-voltage an...
- Patent number 8,941,118
- Issue date Jan 27, 2015
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride metal insulator semiconductor field effect transistor
- Patent number 8,853,709
- Issue date Oct 7, 2014
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Highly Scaled Linear GaN HEMT Structures
- Publication number 20190252535
- Publication date Aug 15, 2019
- HRL LABORATORIES, LLC
- Jeong-Sun MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20180114837
- Publication date Apr 26, 2018
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20170047453
- Publication date Feb 16, 2017
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Metal Insulator Semiconductor Field effect Transistor
- Publication number 20130026495
- Publication date Jan 31, 2013
- HRL LOBORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS

Adam J. Williams

Person

Patents Grantslast 30 patents

Highly scaled linear GaN HEMT Structures

Tunnel barrier schottky

Tunnel barrier schottky

Etch-based fabrication process for stepped field-plate wide-bandgap

Etch-based fabrication process for stepped field-plate wide-bandgap

III-Nitride metal-insulator-semiconductor field-effect transistor

Normally-off III-nitride transistors with high threshold-voltage an...

III-nitride metal insulator semiconductor field effect transistor

Patents Applicationslast 30 patents

Highly Scaled Linear GaN HEMT Structures

TUNNEL BARRIER SCHOTTKY

TUNNEL BARRIER SCHOTTKY

III-Nitride Metal Insulator Semiconductor Field effect Transistor