Adam Thomas Barton

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Boise, ID, US

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Patents Grantslast 30 patents

Information Patent Grant
Reduced resistivity for access lines in a memory array
- Patent number 11,830,816
- Issue date Nov 28, 2023
- Micron Technology, Inc.
- Lei Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,778,837
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Lei Wei
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,380,732
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY
- Publication number 20240162156
- Publication date May 16, 2024
- Micron Technology, Inc.
- Lei Wei
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Ce...
- Publication number 20230389314
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Adam Barton
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220406847
- Publication date Dec 22, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY
- Publication number 20220051984
- Publication date Feb 17, 2022
- Micron Technology, Inc.
- Lei Wei
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220037403
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS