Adarsh RAJASHEKHAR

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device containing ferroelectric-assisted m...
- Patent number 12,317,502
- Issue date May 27, 2025
- SanDisk Technologies, Inc.
- Ramy Nashed Bassely Said
Information Patent Grant
Three-dimensional memory device containing templated crystalline fe...
- Patent number 12,289,889
- Issue date Apr 29, 2025
- SanDisk Technologies, Inc.
- Kartik Sondhi
Information Patent Grant
Method of making a three-dimensional memory device using composite...
- Patent number 12,261,080
- Issue date Mar 25, 2025
- SanDisk Technologies, Inc.
- Roshan Jayakhar Tirukkonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including vertical stack of tubular...
- Patent number 12,255,242
- Issue date Mar 18, 2025
- SanDisk Technologies Inc.
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three-dimensional memory device using composite...
- Patent number 12,243,776
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Roshan Jayakhar Tirukkonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with word-line etch stop liners and...
- Patent number 12,137,554
- Issue date Nov 5, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with vertical word line barrier and...
- Patent number 12,137,565
- Issue date Nov 5, 2024
- SanDisk Technologies LLC
- Rahul Sharangpani
Information Patent Grant
Semiconductor device containing bit lines separated by air gaps and...
- Patent number 12,096,636
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional NOR array including vertical word lines and discr...
- Patent number 12,035,535
- Issue date Jul 9, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,996,462
- Issue date May 28, 2024
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device containing bit lines separated by air gaps and...
- Patent number 11,984,395
- Issue date May 14, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 11,973,123
- Issue date Apr 30, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded assembly including an airgap containing bonding-level dielec...
- Patent number 11,948,902
- Issue date Apr 2, 2024
- SanDisk Technologies LLC
- Lin Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with electrically conductive layers...
- Patent number 11,877,446
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Rahul Sharangpani
Information Patent Grant
Three-dimensional memory device containing composite word lines con...
- Patent number 11,631,695
- Issue date Apr 18, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete memory elements...
- Patent number 11,569,260
- Issue date Jan 31, 2023
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,545,506
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure containing multilayer bonding pads and meth...
- Patent number 11,527,500
- Issue date Dec 13, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing low resistance source-le...
- Patent number 11,521,984
- Issue date Dec 6, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including metal silicide source reg...
- Patent number 11,482,539
- Issue date Oct 25, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multibit ferroelectric memory cells and methods for forming the same
- Patent number 11,450,687
- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Roshan Tirukkonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing word lines formed by sel...
- Patent number 11,437,270
- Issue date Sep 6, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having an epitaxial vertical semico...
- Patent number 11,424,265
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having an epitaxial vertical semico...
- Patent number 11,424,231
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked die assembly including double-sided inter-die bonding conne...
- Patent number 11,309,301
- Issue date Apr 19, 2022
- SanDisk Technologies LLC
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing ferroelectric memory ele...
- Patent number 11,309,332
- Issue date Apr 19, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,302,716
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,282,848
- Issue date Mar 22, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BONDING STRUCTURES FOR HIGH-DENSITY METAL-TO-METAL BONDING AND METH...
- Publication number 20250157963
- Publication date May 15, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDING STRUCTURES FOR HIGH-DENSITY METAL-TO-METAL BONDING AND METH...
- Publication number 20250157964
- Publication date May 15, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BACKSIDE SEMICONDUCTOR SO...
- Publication number 20250008729
- Publication date Jan 2, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Adarsh RAJASHEKHAR
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BACKSIDE SEMICONDUCTOR SO...
- Publication number 20250008736
- Publication date Jan 2, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING CHANNEL CAP STRUCTURES AND...
- Publication number 20240349501
- Publication date Oct 17, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING CHANNEL CAP STRUCTURES AND...
- Publication number 20240349500
- Publication date Oct 17, 2024
- SANDISK TECHNOLOGIES LLC
- Bing ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENINGS ARRANGED...
- Publication number 20240332177
- Publication date Oct 3, 2024
- SANDISK TECHNOLOGIES LLC
- Ryo NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH INTEGRATED CONTACT AND SUPPORT...
- Publication number 20240276725
- Publication date Aug 15, 2024
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON...
- Publication number 20240237346
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ENGINEERED CHARGE STORAG...
- Publication number 20240179897
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED FERROELECTR...
- Publication number 20240130137
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE CHARGE STORAGE...
- Publication number 20240121960
- Publication date Apr 11, 2024
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING FERROELECTRIC-SPACER-FERROELECTRIC MEMORY...
- Publication number 20240064995
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...
- Publication number 20240008281
- Publication date Jan 4, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP L...
- Publication number 20230389317
- Publication date Nov 30, 2023
- Western Digital Technologies, Inc.
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING METAL INTERCONNECT STRUCTURES THAT C...
- Publication number 20230352401
- Publication date Nov 2, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20230345719
- Publication date Oct 26, 2023
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL PEDESTALS AND...
- Publication number 20230301077
- Publication date Sep 21, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING HAMMERHEAD-SHAPED WORD LI...
- Publication number 20230246084
- Publication date Aug 3, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICES INCLUDING A SINGLE CRYSTALLINE FERROELECTRIC...
- Publication number 20230231029
- Publication date Jul 20, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICES INCLUDING A SINGLE CRYSTALLINE FERROELECTRIC...
- Publication number 20230232634
- Publication date Jul 20, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE...
- Publication number 20230178425
- Publication date Jun 8, 2023
- SANDISK TECHNOLOGIES LLC
- Roshan Jayakhar TIRUKKONDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH WORD-LINE ETCH STOP LINERS AND...
- Publication number 20230157013
- Publication date May 18, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20230128682
- Publication date Apr 27, 2023
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...
- Publication number 20230089578
- Publication date Mar 23, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...
- Publication number 20230090951
- Publication date Mar 23, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED ASSEMBLY INCLUDING AN AIRGAP CONTAINING BONDING-LEVEL DIELEC...
- Publication number 20230008286
- Publication date Jan 12, 2023
- SANDISK TECHNOLOGIES LLC
- Lin HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...
- Publication number 20220399354
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...
- Publication number 20220399350
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Adarsh RAJASHEKHAR

Person

Patents Grantslast 30 patents

Three-dimensional memory device containing ferroelectric-assisted m...

Three-dimensional memory device containing templated crystalline fe...

Method of making a three-dimensional memory device using composite...

Three-dimensional memory device including vertical stack of tubular...

Method of making a three-dimensional memory device using composite...

Ferroelectric devices including a single crystalline ferroelectric...

Three-dimensional memory device with word-line etch stop liners and...

Three-dimensional memory device with vertical word line barrier and...

Semiconductor device containing bit lines separated by air gaps and...

Three-dimensional NOR array including vertical word lines and discr...

Ferroelectric field effect transistors having enhanced memory windo...

Semiconductor device containing bit lines separated by air gaps and...

Ferroelectric devices including a single crystalline ferroelectric...

Bonded assembly including an airgap containing bonding-level dielec...

Three-dimensional memory device with electrically conductive layers...

Three-dimensional memory device containing composite word lines con...

Three-dimensional ferroelectric memory device containing lattice-ma...

Three-dimensional memory device including discrete memory elements...

Ferroelectric field effect transistors having enhanced memory windo...

Semiconductor structure containing multilayer bonding pads and meth...

Three-dimensional memory device containing low resistance source-le...

Three-dimensional memory device including metal silicide source reg...

Multibit ferroelectric memory cells and methods for forming the same

Three-dimensional memory device containing word lines formed by sel...

Three-dimensional memory device having an epitaxial vertical semico...

Three-dimensional memory device having an epitaxial vertical semico...

Stacked die assembly including double-sided inter-die bonding conne...

Three-dimensional memory device containing ferroelectric memory ele...

Three-dimensional memory device including ferroelectric-metal-insul...

Three-dimensional memory device including ferroelectric-metal-insul...

Patents Applicationslast 30 patents

BONDING STRUCTURES FOR HIGH-DENSITY METAL-TO-METAL BONDING AND METH...

BONDING STRUCTURES FOR HIGH-DENSITY METAL-TO-METAL BONDING AND METH...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BACKSIDE SEMICONDUCTOR SO...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BACKSIDE SEMICONDUCTOR SO...

THREE-DIMENSIONAL MEMORY DEVICES HAVING CHANNEL CAP STRUCTURES AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING CHANNEL CAP STRUCTURES AND...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENINGS ARRANGED...

THREE-DIMENSIONAL MEMORY DEVICE WITH INTEGRATED CONTACT AND SUPPORT...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ENGINEERED CHARGE STORAG...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED FERROELECTR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE CHARGE STORAGE...

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE CONTAINING FERROELECTRIC-SPACER-FERROELECTRIC MEMORY...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP L...

SEMICONDUCTOR DEVICE INCLUDING METAL INTERCONNECT STRUCTURES THAT C...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL PEDESTALS AND...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING HAMMERHEAD-SHAPED WORD LI...

FERROELECTRIC DEVICES INCLUDING A SINGLE CRYSTALLINE FERROELECTRIC...

FERROELECTRIC DEVICES INCLUDING A SINGLE CRYSTALLINE FERROELECTRIC...

METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE...

THREE-DIMENSIONAL MEMORY DEVICE WITH WORD-LINE ETCH STOP LINERS AND...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...

SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...

BONDED ASSEMBLY INCLUDING AN AIRGAP CONTAINING BONDING-LEVEL DIELEC...

THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...