Adolf Schoner

Person

Kista, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Concept for silicon carbide power devices
- Patent number 12,034,001
- Issue date Jul 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf Schoner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal efficient SiC device wafer production
- Patent number 11,996,330
- Issue date May 28, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a Schottky diode with a MOSFET
- Patent number 11,984,497
- Issue date May 14, 2024
- II-VI ADVANCED MATERIALS, LLC
- Nicolas Thierry-Jebali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET in SiC with self-aligned lateral MOS channel
- Patent number 11,923,450
- Issue date Mar 5, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf Schoner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,876,116
- Issue date Jan 16, 2024
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Feeder design with high current capability
- Patent number 11,869,940
- Issue date Jan 9, 2024
- II-VI DELAWARE, INC.
- Hossein Elahipanah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concept for silicon for carbide power devices
- Patent number 11,652,099
- Issue date May 16, 2023
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a Schottky diode with a MOSFET
- Patent number 11,581,431
- Issue date Feb 14, 2023
- II-VI DELAWARE, INC.
- Nicolas Thierry-Jebali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Feeder design with high current capability
- Patent number 11,575,007
- Issue date Feb 7, 2023
- II-VI DELAWARE, INC.
- Hossein Elahipanah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET in sic with self-aligned lateral MOS channel
- Patent number 11,444,192
- Issue date Sep 13, 2022
- II-VI Delaware Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a grid
- Patent number 11,342,423
- Issue date May 24, 2022
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concept for silicon carbide power devices
- Patent number 11,276,681
- Issue date Mar 15, 2022
- II-VI DELAWARE, INC.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Feeder design with high current capability
- Patent number 11,158,706
- Issue date Oct 26, 2021
- II-VI DELAWARE, INC.
- Hossein Elahipanah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a Schottky diode with a MOSFET
- Patent number 11,114,557
- Issue date Sep 7, 2021
- II-VI DELAWARE, INC.
- Nicolas Thierry-Jebali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a region doped with boron in a SiC-layer
- Patent number 6,703,294
- Issue date Mar 9, 2004
- Cree, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode of SiC and a method for production thereof
- Patent number 6,104,043
- Issue date Aug 15, 2000
- ABB Research Ltd.
- Willy Hermansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN-diode of SiC and a method for production thereof
- Patent number 5,902,117
- Issue date May 11, 1999
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and a method for epitaxially growing objects by cvd
- Patent number 5,759,263
- Issue date Jun 2, 1998
- ABB Research Ltd.
- Nils Nordell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor device having semiconductor la...
- Patent number 5,705,406
- Issue date Jan 6, 1998
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device by the use of an implan...
- Patent number 5,674,765
- Issue date Oct 7, 1997
- ABB Research Ltd.
- Kurt Rottner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...
- Publication number 20240355938
- Publication date Oct 24, 2024
- II-VI Delaware, Inc.
- Shuoben Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON CARBIDE POWER DEVICES
- Publication number 20240321868
- Publication date Sep 26, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf SCHONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION
- Publication number 20240274468
- Publication date Aug 15, 2024
- Adolf SCHONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20240105783
- Publication date Mar 28, 2024
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES
- Publication number 20230246020
- Publication date Aug 3, 2023
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEEDER DESIGN WITH HIGH CURRENT CAPABILITY
- Publication number 20230147611
- Publication date May 11, 2023
- II-VI Delaware, Inc.
- Hossein Elahipanah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET IN SIC WITH SELF-ALIGNED LATERAL MOS CHANNEL
- Publication number 20220376107
- Publication date Nov 24, 2022
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GRID
- Publication number 20220254887
- Publication date Aug 11, 2022
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION
- Publication number 20220223476
- Publication date Jul 14, 2022
- ASCATRON AB
- Adolf SCHÖNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES
- Publication number 20220139906
- Publication date May 5, 2022
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET
- Publication number 20220029010
- Publication date Jan 27, 2022
- Il-V1 Delaware, Inc
- Nicolas Thierry-Jebali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEEDER DESIGN WITH HIGH CURRENT CAPABILITY
- Publication number 20220020850
- Publication date Jan 20, 2022
- II-VI Delaware, Inc.
- Hossein Elahipanah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET IN SIC WITH SELF-ALIGNED LATERAL MOS CHANNEL
- Publication number 20210126123
- Publication date Apr 29, 2021
- ASCATRON AB
- Adolf SCHÖNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET
- Publication number 20210126121
- Publication date Apr 29, 2021
- ASCATRON AB
- Nicolas THIERRY-JEBALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEEDER DESIGN WITH HIGH CURRENT CAPABILITY
- Publication number 20200266272
- Publication date Aug 20, 2020
- ASCATRON AB
- Hossein ELAHIPANAH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A CONCEPT FOR SILICON CARBIDE POWER DEVICES
- Publication number 20200243513
- Publication date Jul 30, 2020
- ASCATRON AB
- Adolf SCHÖNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR MANUFACTURING A GRID
- Publication number 20200219985
- Publication date Jul 9, 2020
- ASCATRON AB
- Adolf SCHÖNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20150287818
- Publication date Oct 8, 2015
- ACREO SWEDISH ICT AB
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS

Adolf Schoner

Person

Patents Grantslast 30 patents

Concept for silicon carbide power devices

Crystal efficient SiC device wafer production

Integration of a Schottky diode with a MOSFET

MOSFET in SiC with self-aligned lateral MOS channel

Method for manufacturing a grid

Feeder design with high current capability

Concept for silicon for carbide power devices

Integration of a Schottky diode with a MOSFET

Feeder design with high current capability

MOSFET in sic with self-aligned lateral MOS channel

Method for manufacturing a grid

Concept for silicon carbide power devices

Feeder design with high current capability

Integration of a Schottky diode with a MOSFET

Method for producing a region doped with boron in a SiC-layer

Schottky diode of SiC and a method for production thereof

PN-diode of SiC and a method for production thereof

Device and a method for epitaxially growing objects by cvd

Method for producing a semiconductor device having semiconductor la...

Method for producing a semiconductor device by the use of an implan...

Patents Applicationslast 30 patents

Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...

CONCEPT FOR SILICON CARBIDE POWER DEVICES

CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION

METHOD FOR MANUFACTURING A GRID

CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES

FEEDER DESIGN WITH HIGH CURRENT CAPABILITY

MOSFET IN SIC WITH SELF-ALIGNED LATERAL MOS CHANNEL

METHOD FOR MANUFACTURING A GRID

CRYSTAL EFFICIENT SIC DEVICE WAFER PRODUCTION

CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES

INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET

FEEDER DESIGN WITH HIGH CURRENT CAPABILITY

MOSFET IN SIC WITH SELF-ALIGNED LATERAL MOS CHANNEL

INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET

FEEDER DESIGN WITH HIGH CURRENT CAPABILITY

A CONCEPT FOR SILICON CARBIDE POWER DEVICES

A METHOD FOR MANUFACTURING A GRID

SEMICONDUCTOR STRUCTURE