Adra V. Carr

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,894,423
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell galvanic corrosion prevention
- Patent number 11,800,817
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,289,573
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for MOL
- Patent number 11,205,590
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact interlayer dielectric replacement with improved SAC cap ret...
- Patent number 11,024,536
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer-confined epitaxial growth
- Patent number 10,978,573
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified dielectric fill between the contacts of field-effect trans...
- Patent number 10,916,470
- Issue date Feb 9, 2021
- GLOBALFOUNDRIES Inc.
- Vimal K. Kamineni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of wrap-around-contact to reduce contact resistivity
- Patent number 10,896,965
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of wrap-around-contact to reduce contact resistivity
- Patent number 10,886,376
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric replacement techniques with protection for so...
- Patent number 10,770,562
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM structure formed by a single process
- Patent number 10,734,575
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of wrap-around-contact to reduce contact resistivity
- Patent number 10,586,872
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM structure formed by a single process
- Patent number 10,446,746
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning material film stack comprising hard mask layer having hi...
- Patent number 10,395,925
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Ekmini Anuja De Silva
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Wrap around contact using sacrificial mandrel
- Patent number 10,367,077
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity wrap-around contacts
- Patent number 10,361,277
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contacts formed with multiple silicide layers
- Patent number 10,276,442
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity wrap-around contacts
- Patent number 10,074,727
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple breakdown point low resistance anti-fuse structure
- Patent number 9,831,254
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY CELL GALVANIC CORROSION PREVENTION
- Publication number 20220407005
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION IN NANOSHEET DEVICE STRUCTURE
- Publication number 20220181439
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Contacts for MOL
- Publication number 20210090950
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER-CONFINED EPITAXIAL GROWTH
- Publication number 20210013321
- Publication date Jan 14, 2021
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTERLAYER DIELECTRIC REPLACEMENT WITH IMPROVED SAC CAP RET...
- Publication number 20200335392
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION IN NANOSHEET DEVICE STRUCTURE
- Publication number 20200279918
- Publication date Sep 3, 2020
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED DIELECTRIC FILL BETWEEN THE CONTACTS OF FIELD-EFFECT TRANS...
- Publication number 20200279768
- Publication date Sep 3, 2020
- GLOBALFOUNDRIES INC.
- Vimal K. Kamineni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC REPLACEMENT TECHNIQUES WITH PROTECTION FOR SO...
- Publication number 20200279933
- Publication date Sep 3, 2020
- International Buisness Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY
- Publication number 20200098927
- Publication date Mar 26, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY
- Publication number 20200098928
- Publication date Mar 26, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY
- Publication number 20200013900
- Publication date Jan 9, 2020
- International Business Machines Corporation
- Adra Carr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
- Publication number 20200006648
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
- Publication number 20200006647
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
- Publication number 20190341546
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING MATERIAL FILM STACK COMPRISING HARD MASK LAYER HAVING HI...
- Publication number 20190206681
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Ekmini Anuja De Silva
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
LOW RESISTIVITY WRAP-AROUND CONTACTS
- Publication number 20180197965
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY WRAP-AROUND CONTACTS
- Publication number 20180090582
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS

Adra V. Carr

Person

Patents Grantslast 30 patents

Contact resistance reduction in nanosheet device structure

Phase change memory cell galvanic corrosion prevention

Contact resistance reduction in nanosheet device structure

Self-aligned contacts for MOL

Contact interlayer dielectric replacement with improved SAC cap ret...

Spacer-confined epitaxial growth

Modified dielectric fill between the contacts of field-effect trans...

Formation of wrap-around-contact to reduce contact resistivity

Formation of wrap-around-contact to reduce contact resistivity

Interlayer dielectric replacement techniques with protection for so...

ReRAM structure formed by a single process

Formation of wrap-around-contact to reduce contact resistivity

ReRAM structure formed by a single process

Patterning material film stack comprising hard mask layer having hi...

Wrap around contact using sacrificial mandrel

Low resistivity wrap-around contacts

Wrap-around contacts formed with multiple silicide layers

Low resistivity wrap-around contacts

Multiple breakdown point low resistance anti-fuse structure

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY CELL GALVANIC CORROSION PREVENTION

CONTACT RESISTANCE REDUCTION IN NANOSHEET DEVICE STRUCTURE

Self-Aligned Contacts for MOL

SPACER-CONFINED EPITAXIAL GROWTH

CONTACT INTERLAYER DIELECTRIC REPLACEMENT WITH IMPROVED SAC CAP RET...

CONTACT RESISTANCE REDUCTION IN NANOSHEET DEVICE STRUCTURE

MODIFIED DIELECTRIC FILL BETWEEN THE CONTACTS OF FIELD-EFFECT TRANS...

INTERLAYER DIELECTRIC REPLACEMENT TECHNIQUES WITH PROTECTION FOR SO...

FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY

FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY

FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY

ReRAM STRUCTURE FORMED BY A SINGLE PROCESS

ReRAM STRUCTURE FORMED BY A SINGLE PROCESS

ReRAM STRUCTURE FORMED BY A SINGLE PROCESS

PATTERNING MATERIAL FILM STACK COMPRISING HARD MASK LAYER HAVING HI...

LOW RESISTIVITY WRAP-AROUND CONTACTS

LOW RESISTIVITY WRAP-AROUND CONTACTS