Adrian Finney

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor die with a power device and method of manufacturing t...
- Patent number 12,107,152
- Issue date Oct 1, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement with an integrated temperature sensor
- Patent number 12,021,139
- Issue date Jun 25, 2024
- Infineon Technologies AG
- Adrian Finney
- G01 - MEASURING TESTING
Information Patent Grant
Transistor arrangement with a load transistor and a sense transistor
- Patent number 10,931,272
- Issue date Feb 23, 2021
- Infineon Technologies AG
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with a guard structure and corresponding metho...
- Patent number 10,199,490
- Issue date Feb 5, 2019
- Infineon Technologies AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 9,941,402
- Issue date Apr 10, 2018
- Infineon Technologies AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon diode bandgap reference
- Patent number 9,929,150
- Issue date Mar 27, 2018
- Infineon Technologies AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minority carrier conversion structure
- Patent number 9,590,091
- Issue date Mar 7, 2017
- Infineon Technologies AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smart semiconductor switch
- Patent number 9,406,755
- Issue date Aug 2, 2016
- Infineon Technologies AG
- Dorin Ioan Mohai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smart semiconductor switch
- Patent number 9,406,754
- Issue date Aug 2, 2016
- Infineon Technologies AG
- Dorin Ioan Mohai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Inverse current protection circuit sensed with vertical source foll...
- Patent number 9,344,078
- Issue date May 17, 2016
- Infineon Technologies AG
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
ESD protection
- Patent number 9,159,719
- Issue date Oct 13, 2015
- Infineon Technologies AG
- Michael Mayerhofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low on resistance and high breakdown voltage
- Patent number 9,070,765
- Issue date Jun 30, 2015
- Infineon Technologies AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...
- Publication number 20240072785
- Publication date Feb 29, 2024
- Infineon Technologies Austria AG
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DIE WITH A TUNGSTEN RUNNER AND A GATE RUNNER
- Publication number 20240030137
- Publication date Jan 25, 2024
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A CURRENT SPREADING REGION
- Publication number 20230261104
- Publication date Aug 17, 2023
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE INCLUDING A DEVICE
- Publication number 20230088305
- Publication date Mar 23, 2023
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230041169
- Publication date Feb 9, 2023
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A POWER DEVICE AND METHOD OF MANUFACTURING T...
- Publication number 20220285532
- Publication date Sep 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220262946
- Publication date Aug 18, 2022
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Arrangement with an Integrated Temperature Sensor
- Publication number 20210193827
- Publication date Jun 24, 2021
- Adrian Finney
- G01 - MEASURING TESTING
Information Patent Application
Transistor Arrangement with a Load Transistor and a Sense Transistor
- Publication number 20200304117
- Publication date Sep 24, 2020
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Transistor Device with Trench Edge Termination
- Publication number 20190043982
- Publication date Feb 7, 2019
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Guard Structure and Corresponding Metho...
- Publication number 20180197982
- Publication date Jul 12, 2018
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20170373182
- Publication date Dec 28, 2017
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minority Carrier Conversion Structure
- Publication number 20160056280
- Publication date Feb 25, 2016
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMART SEMICONDUCTOR SWITCH
- Publication number 20160035834
- Publication date Feb 4, 2016
- INFINEON TECHNOLOGIES AG
- Dorin Ioan Mohai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMART SEMICONDUCTOR SWITCH
- Publication number 20160035835
- Publication date Feb 4, 2016
- INFINEON TECHNOLOGIES AG
- Dorin Ioan Mohai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Charge Compensation Region
- Publication number 20150263165
- Publication date Sep 17, 2015
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Low On Resistance and High Breakdown Voltage
- Publication number 20140217500
- Publication date Aug 7, 2014
- INFINEON TECHNOLOGIES AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON DIODE BANDGAP REFERENCE
- Publication number 20140043096
- Publication date Feb 13, 2014
- Adrian FINNEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD Protection
- Publication number 20140029145
- Publication date Jan 30, 2014
- Michael Mayerhofer
- H01 - BASIC ELECTRIC ELEMENTS

Adrian Finney

Person

Patents Grantslast 30 patents

Semiconductor die with a power device and method of manufacturing t...

Semiconductor arrangement with an integrated temperature sensor

Transistor arrangement with a load transistor and a sense transistor

Semiconductor device with a guard structure and corresponding metho...

Semiconductor devices and methods for forming a semiconductor device

Polysilicon diode bandgap reference

Minority carrier conversion structure

Smart semiconductor switch

Smart semiconductor switch

Inverse current protection circuit sensed with vertical source foll...

ESD protection

Semiconductor device with low on resistance and high breakdown voltage

Patents Applicationslast 30 patents

ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...

SEMICONDUCTOR DIE WITH A TUNGSTEN RUNNER AND A GATE RUNNER

SEMICONDUCTOR DEVICE HAVING A CURRENT SPREADING REGION

SEMICONDUCTOR DIE INCLUDING A DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIE WITH A POWER DEVICE AND METHOD OF MANUFACTURING T...

SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Arrangement with an Integrated Temperature Sensor

Transistor Arrangement with a Load Transistor and a Sense Transistor

Transistor Device with Trench Edge Termination

Semiconductor Device with a Guard Structure and Corresponding Metho...

Semiconductor Devices and Methods for Forming a Semiconductor Device

Minority Carrier Conversion Structure

SMART SEMICONDUCTOR SWITCH

SMART SEMICONDUCTOR SWITCH

Semiconductor Device Having a Charge Compensation Region

Semiconductor Device with Low On Resistance and High Breakdown Voltage

POLYSILICON DIODE BANDGAP REFERENCE

ESD Protection