Adrian R. Powell

Person

Cary, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 11,371,163
- Issue date Jun 28, 2022
- Wolfspeed, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 10,577,720
- Issue date Mar 3, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing high quality silicon carbide crystal in a seede...
- Patent number 9,790,619
- Issue date Oct 17, 2017
- Cree, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing high quality bulk silicon carbide single crystal by manag...
- Patent number 9,200,381
- Issue date Dec 1, 2015
- Cree, Inc.
- Robert Tyler Leonard
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 9,099,377
- Issue date Aug 4, 2015
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter SiC crystal grown on off-axis seed
- Patent number 8,980,445
- Issue date Mar 17, 2015
- Cree, Inc.
- Robert T. Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 8,866,159
- Issue date Oct 21, 2014
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,785,946
- Issue date Jul 22, 2014
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,624,267
- Issue date Jan 7, 2014
- Cree, Inc.
- Adrian Powell
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 8,618,552
- Issue date Dec 31, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 8,410,488
- Issue date Apr 2, 2013
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,384,090
- Issue date Feb 26, 2013
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter high purity semi-insulating single crystal s...
- Patent number 7,601,441
- Issue date Oct 13, 2009
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing high quality large size silicon carbide crystals
- Patent number 7,563,321
- Issue date Jul 21, 2009
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Three inch silicon carbide wafer with low warp, bow, and TTV
- Patent number 7,422,634
- Issue date Sep 9, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,364,617
- Issue date Apr 29, 2008
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,351,286
- Issue date Apr 1, 2008
- Cree, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 7,314,521
- Issue date Jan 1, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low 1c screw dislocation 3 inch silicon carbide wafer
- Patent number 7,314,520
- Issue date Jan 1, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of subsurface damage in the production of bulk SiC crystals
- Patent number 7,300,519
- Issue date Nov 27, 2007
- Cree, Inc.
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low basal plane dislocation bulk grown SiC wafers
- Patent number 7,294,324
- Issue date Nov 13, 2007
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,192,482
- Issue date Mar 20, 2007
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20220189768
- Publication date Jun 16, 2022
- Cree, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20210198804
- Publication date Jul 1, 2021
- Cree, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20200157705
- Publication date May 21, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20180187332
- Publication date Jul 5, 2018
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW MICROPIPE 100 MM SILICON CARBIDE WAFER
- Publication number 20140291698
- Publication date Oct 2, 2014
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20130181231
- Publication date Jul 18, 2013
- Cree, Inc.
- CEM BASCERI
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER
- Publication number 20130161651
- Publication date Jun 27, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110290174
- Publication date Dec 1, 2011
- NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Micropipe 100 mm Silicon Carbide Wafer
- Publication number 20080237609
- Publication date Oct 2, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
- Publication number 20080169476
- Publication date Jul 17, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080083366
- Publication date Apr 10, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080067524
- Publication date Mar 20, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed
- Publication number 20080008641
- Publication date Jan 10, 2008
- Robert T. Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20070240633
- Publication date Oct 18, 2007
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide water
- Publication number 20070240630
- Publication date Oct 18, 2007
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW MICROPIPE 100 MM SILICON CARBIDE WAFER
- Publication number 20070209577
- Publication date Sep 13, 2007
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed and Seedholder Combinations for High Quality Growth of Large S...
- Publication number 20070157874
- Publication date Jul 12, 2007
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Three inch silicon carbide wafer with low warp, bow, and TTV
- Publication number 20060225645
- Publication date Oct 12, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing high quality large size silicon carbide crystals
- Publication number 20060118037
- Publication date Jun 8, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Reduction of subsurface damage in the production of bulk SiC crystals
- Publication number 20060102068
- Publication date May 18, 2006
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Low basal plane dislocation bulk grown SiC wafers
- Publication number 20060075958
- Publication date Apr 13, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1c screw dislocation 3 inch silicon carbide wafer
- Publication number 20060073707
- Publication date Apr 6, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed and seedholder combinations for high quality growth of large s...
- Publication number 20060032434
- Publication date Feb 16, 2006
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter high purity semi-insulating single crystal s...
- Publication number 20050126471
- Publication date Jun 16, 2005
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH

Adrian R. Powell

Person

Patents Grantslast 30 patents

Large dimension silicon carbide single crystalline materials with r...

Large diameter silicon carbide wafers

Stabilized, high-doped silicon carbide

Stabilized, high-doped silicon carbide

Method of producing high quality silicon carbide crystal in a seede...

Producing high quality bulk silicon carbide single crystal by manag...

Micropipe-free silicon carbide and related method of manufacture

One hundred millimeter SiC crystal grown on off-axis seed

Low micropipe 100 mm silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low micropipe 100 mm silicon carbide wafer

Micropipe-free silicon carbide and related method of manufacture

Low 1C screw dislocation 3 inch silicon carbide wafer

One hundred millimeter single crystal silicon carbide wafer

One hundred millimeter high purity semi-insulating single crystal s...

Process for producing high quality large size silicon carbide crystals

Three inch silicon carbide wafer with low warp, bow, and TTV

Seed and seedholder combinations for high quality growth of large s...

One hundred millimeter single crystal silicon carbide wafer

Seeded single crystal silicon carbide growth and resulting crystals

Low micropipe 100 mm silicon carbide wafer

Low 1c screw dislocation 3 inch silicon carbide wafer

Reduction of subsurface damage in the production of bulk SiC crystals

Low basal plane dislocation bulk grown SiC wafers

Seed and seedholder combinations for high quality growth of large s...

Patents Applicationslast 30 patents

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

LARGE DIAMETER SILICON CARBIDE WAFERS

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

LARGE DIAMETER SILICON CARBIDE WAFERS

STABILIZED, HIGH-DOPED SILICON CARBIDE

STABILIZED, HIGH-DOPED SILICON CARBIDE

LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

Low Micropipe 100 mm Silicon Carbide Wafer

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed

One hundred millimeter single crystal silicon carbide wafer

One hundred millimeter single crystal silicon carbide water

LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

Seed and Seedholder Combinations for High Quality Growth of Large S...

Three inch silicon carbide wafer with low warp, bow, and TTV

Seeded single crystal silicon carbide growth and resulting crystals

Process for producing high quality large size silicon carbide crystals

Reduction of subsurface damage in the production of bulk SiC crystals

Low basal plane dislocation bulk grown SiC wafers

Low 1c screw dislocation 3 inch silicon carbide wafer

Seed and seedholder combinations for high quality growth of large s...

One hundred millimeter high purity semi-insulating single crystal s...