Adrianus Willem Ludikhuize

Person

5656 AA Eindhoven, NL

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated half-bridge power circuit
- Patent number 7,459,750
- Issue date Dec 2, 2008
- NXP B.V.
- Adrianus Willem Ludikhuize
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device
- Patent number 7,061,059
- Issue date Jun 13, 2006
- Koninklijke Philips Electronics, N.V.
- Constantinus Paulus Meeuwsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with guard ring (of same type as drain) surrounding the drain
- Patent number 6,933,559
- Issue date Aug 23, 2005
- Koninklijke Philips Electronics N.V.
- Raymond Van Roijen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a high-voltage circuit element
- Patent number 6,608,351
- Issue date Aug 19, 2003
- Constantinus Paulus Meeuwsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a charge removal facility for minority...
- Patent number 6,597,044
- Issue date Jul 22, 2003
- Constantinus Paulus Meeuwsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having LDMOS transistors and a screening layer
- Patent number 6,288,424
- Issue date Sep 11, 2001
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a half-bridge circuit
- Patent number 6,160,304
- Issue date Dec 12, 2000
- U.S. Phillips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having increased safe operating range
- Patent number 5,998,845
- Issue date Dec 7, 1999
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a high-voltage semiconductor device
- Patent number 5,976,942
- Issue date Nov 2, 1999
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage characteristics
- Patent number 5,910,670
- Issue date Jun 8, 1999
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high-voltage DMOS transistor with drain zone charge draining
- Patent number 5,883,413
- Issue date Mar 16, 1999
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a lateral insulated gate biopolar trans...
- Patent number 5,796,146
- Issue date Aug 18, 1998
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device, and semiconductor d...
- Patent number 5,786,252
- Issue date Jul 28, 1998
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit arrangement, and junction field effect transistor suitable...
- Patent number 5,747,841
- Issue date May 5, 1998
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fast lateral dmost provided with a high...
- Patent number 5,610,432
- Issue date Mar 11, 1997
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an MOST provided with an extended drain r...
- Patent number 5,473,180
- Issue date Dec 5, 1995
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor circuit having improved breakdown voltage...
- Patent number 5,412,234
- Issue date May 2, 1995
- U.S. Philips Corporation
- Franciscus A. C. M. Schoofs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a lateral DMOST with breakdown voltage...
- Patent number 5,347,155
- Issue date Sep 13, 1994
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an improved breakdown voltage-raising s...
- Patent number 5,324,978
- Issue date Jun 28, 1994
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high-voltage transistor suitable for use in emitter followers
- Patent number 4,987,469
- Issue date Jan 22, 1991
- U.S. Philips Corp.
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with complementary MOS transistors
- Patent number 4,952,998
- Issue date Aug 28, 1990
- U.S. Philips Corp.
- Adrianus W. Ludikhuize
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
DC/AC bridge circuit
- Patent number 4,908,551
- Issue date Mar 13, 1990
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device having floating semiconductor zones
- Patent number 4,750,028
- Issue date Jun 7, 1988
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,682,205
- Issue date Jul 21, 1987
- U.S. Philips Corporation
- Adrianus W. Ludikhuize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS high-voltage element with high-resistivity gate and field-plate
- Patent number 4,590,509
- Issue date May 20, 1986
- U.S. Philips Corporation
- Leonard J. M. Esser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced surface field strength
- Patent number 4,422,089
- Issue date Dec 20, 1983
- U.S. Philips Corporation
- Henricus M. J. Vaes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable impedance attenuator having all connection contacts on...
- Patent number 4,143,383
- Issue date Mar 6, 1979
- U.S. Philips Corporation
- Karel P. Van Rooij
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Voltage-controlled HF-signal attenuator
- Patent number 4,047,131
- Issue date Sep 6, 1977
- U.S. Philips Corporation
- Adrianus Willem Ludikhuize
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
Integrated Half-Bridge Power Circuit
- Publication number 20090079272
- Publication date Mar 26, 2009
- NXP, B.V.
- Adrianus Willem Ludikhuize
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Integrated half-bridge power circuit
- Publication number 20060054967
- Publication date Mar 16, 2006
- Koninklijke Philips Electronics N.V.
- Adrianus Willem Ludikhuize
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor device
- Publication number 20030001217
- Publication date Jan 2, 2003
- U.S. PHILIPS CORPORATION
- Constantinus Paulus Meeuwsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010011746
- Publication date Aug 9, 2001
- Constantinus Paulus Meeuwsen
- H01 - BASIC ELECTRIC ELEMENTS

Adrianus Willem Ludikhuize

Person

Patents Grantslast 30 patents

Integrated half-bridge power circuit

Semiconductor device

LDMOS with guard ring (of same type as drain) surrounding the drain

Semiconductor device comprising a high-voltage circuit element

Semiconductor device having a charge removal facility for minority...

Semiconductor device having LDMOS transistors and a screening layer

Semiconductor device comprising a half-bridge circuit

Semiconductor device having increased safe operating range

Method of manufacturing a high-voltage semiconductor device

Semiconductor device with improved breakdown voltage characteristics

Lateral high-voltage DMOS transistor with drain zone charge draining

Semiconductor device having a lateral insulated gate biopolar trans...

Method of manufacturing a semiconductor device, and semiconductor d...

Circuit arrangement, and junction field effect transistor suitable...

Semiconductor device with a fast lateral dmost provided with a high...

Semiconductor device with an MOST provided with an extended drain r...

Integrated semiconductor circuit having improved breakdown voltage...

Semiconductor device having a lateral DMOST with breakdown voltage...

Semiconductor device having an improved breakdown voltage-raising s...

Lateral high-voltage transistor suitable for use in emitter followers

Integrated circuit with complementary MOS transistors

DC/AC bridge circuit

Semiconductor device having floating semiconductor zones

Semiconductor device

MIS high-voltage element with high-resistivity gate and field-plate

Semiconductor device having a reduced surface field strength

Controllable impedance attenuator having all connection contacts on...

Voltage-controlled HF-signal attenuator

Patents Applicationslast 30 patents

Integrated Half-Bridge Power Circuit

Integrated half-bridge power circuit

Semiconductor device

Semiconductor device