Ahmed Shibly

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low power power-up reset output driver
- Patent number 11,368,155
- Issue date Jun 21, 2022
- GLOBALFOUNDRIES U.S. INC.
- Dzung T. Tran
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Controlling the latchup effect
- Patent number 9,759,764
- Issue date Sep 12, 2017
- Cypress Semiconductor Corporation
- Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-the-line constructs using diffusion contact structures
- Patent number 9,142,513
- Issue date Sep 22, 2015
- GLOBALFOUNDRIES Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-the-line constructs using diffusion contact structures
- Patent number 9,006,100
- Issue date Apr 14, 2015
- GLOBALFOUNDRIES Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling the latchup effect
- Patent number 8,912,014
- Issue date Dec 16, 2014
- Spansion LLC
- Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction leakage suppression in memory devices
- Patent number 8,536,011
- Issue date Sep 17, 2013
- Spansion LLC
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate semiconductor device with gate contacts formed adjacent...
- Patent number 8,217,450
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES, INC.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction leakage suppression in memory devices
- Patent number 7,939,440
- Issue date May 10, 2011
- Spansion LLC
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to obtain multiple gate thicknesses using in-situ gate etch...
- Patent number 7,776,696
- Issue date Aug 17, 2010
- Spansion LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped finfet
- Patent number 7,541,267
- Issue date Jun 2, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for forming multiple fin structures using metal...
- Patent number 7,498,225
- Issue date Mar 3, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of semiconductor devices to achieve <100> channel orienta...
- Patent number 7,432,558
- Issue date Oct 7, 2008
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective channel implantation for forming semiconductor devices wi...
- Patent number 7,262,104
- Issue date Aug 28, 2007
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate semiconductor device having a metal gate
- Patent number 7,256,455
- Issue date Aug 14, 2007
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped FinFET
- Patent number 7,250,645
- Issue date Jul 31, 2007
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow-body damascene tri-gate FinFET
- Patent number 7,186,599
- Issue date Mar 6, 2007
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a fin structure
- Patent number 7,179,692
- Issue date Feb 20, 2007
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step chemical mechanical polishing of a gate area in a FinFET
- Patent number 7,125,776
- Issue date Oct 24, 2006
- Advanced Micro Devices, Inc.
- Krishnashree Achuthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying carrier mobility in semiconductor devices to achieve overal...
- Patent number 7,095,065
- Issue date Aug 22, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarizing sacrificial oxide to improve gate critical dimension in...
- Patent number 7,091,068
- Issue date Aug 15, 2006
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial oxide for minimizing box undercut in damascene FinFET
- Patent number 7,084,018
- Issue date Aug 1, 2006
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene tri-gate FinFET
- Patent number 7,041,542
- Issue date May 9, 2006
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow body raised source/drain metal gate MOSFET
- Patent number 7,034,361
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned damascene gate
- Patent number 7,029,958
- Issue date Apr 18, 2006
- Advanced Micro Devices, Inc.
- Cyrus E. Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain protection and stringer-free gate formation in sem...
- Patent number 7,029,959
- Issue date Apr 18, 2006
- Advanced Micro Devices, Inc.
- Chih-Yuh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a tri-gate MOSFET
- Patent number 6,998,301
- Issue date Feb 14, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fully silicided source/drain and damascen...
- Patent number 6,995,438
- Issue date Feb 7, 2006
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual silicon layer for chemical mechanical polishing planarization
- Patent number 6,982,464
- Issue date Jan 3, 2006
- Advanced Micro Devices, Inc.
- Krishnashree Achuthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated FinFET P-channel/N-channel transistor pair
- Patent number 6,974,983
- Issue date Dec 13, 2005
- Advanced Micro Devices, Inc.
- Wiley Eugene Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene gate semiconductor processing with local thinning of chan...
- Patent number 6,967,175
- Issue date Nov 22, 2005
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INPUT BUFFER WITH HYSTERESIS-INTEGRATED VOLTAGE PROTECTION DEVICES...
- Publication number 20240195416
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Dzung T. Tran
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
LOW POWER POWER-UP RESET OUTPUT DRIVER
- Publication number 20220182058
- Publication date Jun 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Dzung T. Tran
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES
- Publication number 20150187702
- Publication date Jul 2, 2015
- GLOBALFOUNDRIES INC.
- Mahbub RASHED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES
- Publication number 20140042641
- Publication date Feb 13, 2014
- GLOBALFOUNDRIES INC.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION LEAKAGE SUPPRESSION IN MEMORY DEVICES
- Publication number 20110176363
- Publication date Jul 21, 2011
- SPANSION LLC
- Shibly S. AHMED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO OBTAIN MULTIPLE GATE THICKNESSES USING IN-SITU GATE ETCH...
- Publication number 20080268630
- Publication date Oct 30, 2008
- SPANSION LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction leakage suppression in memory devices
- Publication number 20070052002
- Publication date Mar 8, 2007
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damascene tri-gate FinFET
- Publication number 20050153492
- Publication date Jul 14, 2005
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Narrow-body damascene tri-gate FinFET
- Publication number 20050153485
- Publication date Jul 14, 2005
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-step chemical mechanical polishing of a gate area in a FinFET
- Publication number 20050118824
- Publication date Jun 2, 2005
- Krishnashree Achuthan
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Self aligned damascene gate
- Publication number 20050104091
- Publication date May 19, 2005
- Cyrus E. Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual silicon layer for chemical mechanical polishing planarization
- Publication number 20050056845
- Publication date Mar 17, 2005
- Krishnashree Achuthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERAL...
- Publication number 20050029603
- Publication date Feb 10, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a U-shaped ga...
- Publication number 20050006666
- Publication date Jan 13, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET
- Publication number 20040253775
- Publication date Dec 16, 2004
- Krishnashree Achuthan
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Double gate semiconductor device having separate gates
- Publication number 20040126975
- Publication date Jul 1, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate semiconductor device having a metal gate
- Publication number 20040110097
- Publication date Jun 10, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planarizing gate material to improve gate critical dimension in sem...
- Publication number 20040092062
- Publication date May 13, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a U-shaped gate structure
- Publication number 20040075121
- Publication date Apr 22, 2004
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS

Ahmed Shibly

Person

Patents Grantslast 30 patents

Low power power-up reset output driver

Controlling the latchup effect

Middle-of-the-line constructs using diffusion contact structures

Middle-of-the-line constructs using diffusion contact structures

Controlling the latchup effect

Junction leakage suppression in memory devices

Double-gate semiconductor device with gate contacts formed adjacent...

Junction leakage suppression in memory devices

Method to obtain multiple gate thicknesses using in-situ gate etch...

Reversed T-shaped finfet

Systems and methods for forming multiple fin structures using metal...

Formation of semiconductor devices to achieve <100> channel orienta...

Selective channel implantation for forming semiconductor devices wi...

Double gate semiconductor device having a metal gate

Reversed T-shaped FinFET

Narrow-body damascene tri-gate FinFET

Method of manufacturing a semiconductor device having a fin structure

Multi-step chemical mechanical polishing of a gate area in a FinFET

Varying carrier mobility in semiconductor devices to achieve overal...

Planarizing sacrificial oxide to improve gate critical dimension in...

Sacrificial oxide for minimizing box undercut in damascene FinFET

Damascene tri-gate FinFET

Narrow body raised source/drain metal gate MOSFET

Self aligned damascene gate

Source and drain protection and stringer-free gate formation in sem...

Method for forming a tri-gate MOSFET

Semiconductor device with fully silicided source/drain and damascen...

Dual silicon layer for chemical mechanical polishing planarization

Isolated FinFET P-channel/N-channel transistor pair

Damascene gate semiconductor processing with local thinning of chan...

Patents Applicationslast 30 patents

INPUT BUFFER WITH HYSTERESIS-INTEGRATED VOLTAGE PROTECTION DEVICES...

LOW POWER POWER-UP RESET OUTPUT DRIVER

MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES

MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES

JUNCTION LEAKAGE SUPPRESSION IN MEMORY DEVICES

METHOD TO OBTAIN MULTIPLE GATE THICKNESSES USING IN-SITU GATE ETCH...

Junction leakage suppression in memory devices

Damascene tri-gate FinFET

Narrow-body damascene tri-gate FinFET

Multi-step chemical mechanical polishing of a gate area in a FinFET

Self aligned damascene gate

Dual silicon layer for chemical mechanical polishing planarization

VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERAL...

Method of manufacturing a semiconductor device having a U-shaped ga...

MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET

Double gate semiconductor device having separate gates

Double gate semiconductor device having a metal gate

Planarizing gate material to improve gate critical dimension in sem...

Semiconductor device having a U-shaped gate structure